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外场激励通过调控强关联氧化物中自由度间的关联耦合作用, 触发其发生多重莫特电子相变和轨道重构, 在强关联电子相变氧化物体系中发现了丰富的新奇物性和量子转变, 为构筑新型类脑神经元逻辑器件、磁电耦合器件及能量转换器件奠定基础, 引起了凝聚态物理领域的广泛关注. 本工作系统地回顾了国内外科研团队在强关联氧化物电子相变特性多场调控领域的研究进展, 旨在凸显离子、应力场和栅极电场等新型功能调控自由度在强关联氧化物电子相变特性调控和新型功能特性设计中的关键作用, 阐明强关联氧化物中微观自由度的关联耦合作用对其宏观关联电子相变特性的基础调控规律, 为实现强关联氧化物电子相变特性的可控设计与精准调控提供理论依据, 期望利用多物理场的调控作用在强关联电子相变氧化物材料体系中发现更多的新物理、新物性、新器件和新应用.External-field-triggered multiple electronic phase transitions within correlated oxides open up a new paradigm to explore exotic physical functionalities and new quantum transitions via regulating the electron correlations and the interplay in the degrees of freedom. This enables the promising applications in the multidisciplinary field of neuromorphic computing, magnetoelectric coupling, smart windows, bio-sensing and energy conversion. Herein, this review delivers a comprehensive picture of regulating the electronic phase transitions for correlated oxides via multi-field covering the VO2, ReNiO3 and etc., thus highlighting the critical role of external field in exploring the exotic physical property and designing new quantum states. Beyond conventional semiconductors, the complicated interplay in the charge, lattice, orbital and spin degrees of freedom within correlated oxides triggers abundant correlated physical functionalities that are rather susceptible to the external field. For example, hydrogen-associated electron doping Mottronics enables the possibility in discovering new electronic phase and magnetic ground states within the hydrogen-related phase diagram of correlated oxides. In addition, filling-controlled Mottronics by using hydrogenation triggers multiple orbital reconfigurations for correlated oxides away from the correlated electron ground state that results in new quantum transitions via directly manipulating the d-orbital configuration and occupation, such as unconventional Ni-based superconductivity. The transition metals of correlated oxides are generally substituted by dopants to effectively adjust the electronic phase transitions via introducing the carrier doping and/or lattice strain. Imparting an interfacial strain to correlated oxides introduces an additional freedom to manipulate the electronic phase transition via distorting the lattice framework, owing to the interplay between charge and lattice degrees of freedom. In recent years, the polarization field associated to BiFeO3 or PMN-PT material as triggered by a cross-plane electric field was used to adjust the electronic phase transition of correlated oxides that enriches the promising the correlated electronic devices. The exotic physical phenomenon as discovered in the correlated oxides originates from the non-equilibrium states that are triggered by imparting external fields. Nevertheless, the underneath mechanism as associated to the regulation in the electronic phase transitions of correlated oxides is still in a long-standing puzzle, owing to the strong correlation effect. As a representative case, hydrogen-associated Mottronic transitions introduces an additional ion degree of freedom to the correlated oxides that is rather difficult to be decoupled within correlated system. In addition, from the perspective of material synthesis, the abovementioned correlated oxides are expected to be compatible to conventional semiconducting process, by which the prototypical correlated electronic devices can be largely developed. The key point that accurately adjusts and designs the electronic phase transitions for correlated oxides via external fields is associated to clarify the basic relationship between the microscopic degrees of freedom and macroscopic correlated physical properties. On the basis, the multiple electronic phase transitions as triggered by external field within correlated oxides provide new guidance for designing new functionality and interdisciplinary device applications.
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Keywords:
- strongly correlated oxides /
- electronic phase transition /
- correlated physical property regulation /
- metal-to-insulator transition
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