利用不同阴极缓冲层来改善Pentacene/C60太阳能电池的性能

刘瑞; 徐征; 赵谡玲; 张福俊; 曹晓宁; 孔超; 曹文喆; 龚伟

doi:10.7498/aps.60.058801

摘要

制备了结构为ITO/Pentacene/C60/Al的双层光伏电池器件,在C60/Al界面插入了常用的缓冲层材料bathocuproine(BCP)作为阴极缓冲层,通过优化BCP层的厚度来提高电池的性能并研究了阴极缓冲层的作用机理.实验发现,BCP厚度为10 nm时器件的效率最高,为0.46%.在此基础上,利用bathophenanthroline(Bphen)和3,4,9,10-Perylenetetracarb-oxylicdianhydride(PTCDA

关键词:

Abstract

Devices with the structure of ITO/Pentacene/C60/Al were prepared. Then, in order to enhance the performance of these cells and study the mechanism of the cathodic buffer layer, bathocuproine (BCP) of different thickness were inserted between C60 and Al. When inserting 10 nm BCP, the power conversion effciency of the cell is as high as 0.46%. On this basis, bathophenanthroline (Bphen) and 3, 4, 9, 10-Perylenetetracarb-oxylicdianhydride (PTCDA) are used instead of BCP, so as to compare and discuss the effects on the performance of the solar cells caused by the electron mobility and optical absorption properties of the cathodic buffer layers. As the electron mobility of Bphen is two orders of magnitude higher than that of BCP, the efficiency of devices with Bphen as the buffer layer was improved to 0.56%. Furthermore, the absorption spectrum of devices was obviously enhanced by inserting PTCDA material which has large absorption in visible light region, and the highest current density of such device was enhanced to 5.97 mA/cm2 and the efficiency was 0.87%.

Keywords:

作者及机构信息

(1)北京交通大学发光与光信息技术教育部重点实验室,北京交通大学光电子技术研究所,北京 100044; (2)北京交通大学发光与光信息技术教育部重点实验室,北京交通大学光电子技术研究所,北京 100044;榆林职业技术学院神木校区,神木县职业技术教育中心,神木县 719300; (3)中国科学院电工研究所,太阳能热利用及光伏系统重点实验室,北京 100190

基金项目: 国家自然科学基金(批准号:60978060,10974013,10804006),教育部博士点基金(批准号:20090009110027),北京市自然科学基金(批准号:1102028),北京市科委(批准号:Z090803044009001),科技部国际合作计划(批准号:2008DFA61420),北京交通大学"红果园双百计划"资助的课题.

Authors and contacts

(1)Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China; (2)Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China; Yulin Ploytechnic (Shenmu Campus), Shenmu Vocational E; (3)Key Laboratory Solar Thermal Energy and Photovoltaic Systems, Institute of Electrical Engineering,Chinese Academy of Sciences, Beijing 100190, China

参考文献

[1]	Terao Y, Sasabe H, Adachi C 2007 Appl. Phys. Lett. 90 103515
[2]	Yoo S, Domercq B, Kippelen B 2004 Appl. Phys. Lett. 85 5427
[3]	Pandey A K, Nunzi J M 2006 Appl. Phys. Lett. 89 213506
[4]	Tao C L, Zhang X H, Dong M J, Liu Y Y, Sun S, Ou G P, Zhang F J, Zhang H L 2008 Chin. Phys. B 17 281
[5]	Yang J, Nguyen T Q 2007 Organic Electronics 8 566
[6]	Potscavage W J, Yoo S, Domercq B, Kippelen B 2007 Appl. Phys. Lett. 90 253511
[7]	Sullivan P, Jones T S 2008 Organic Electronics 9 656
[8]	Cantrell R, Clancy P 2008 Surface Science 602 3499
[9]	Peumans P, Forrest S R 2001 Appl. Phys. Lett. 79 126
[10]	Peumans P, Yakimov Y, Forrest S R 2003 Appl. Phys. Lett. 93 3693
[11]	Chan M Y, Lee C S, Lai S L, Fung M K, Wong F L, Sun H Y, Lau K M, Lee S T 2006 J. Appl. Phys. 100 094506
[12]	Song Q L, Li C M, Wang M L, Sun X Y, Hou X Y 2007 Appl. Phys. Lett. 90 071109
[13]	Tatsuo Mori, Kohei Kato 2007 Journal of Photopolymer Science and Technology 20 61
[14]	Wang N N, Yu J S, Lin H, Jiang Y D 2010 Chin. J.Chem. Phys. 23 84
[15]	Li Y W, Liu P Y, Hou L T, Wu B 2010 Acta Phys. Sin. 59 1248 (in Chinese) [李艳武、刘彭义、侯林涛、吴冰 2010 物理学报 59 1248] [16] Naka S, Okada H, Onnagawa H, Tsutsui T 2000 Appl. Phys. Lett. 76 197
[16]	Li R H, Meng W M, Peng Y Q, Ma C Z, Wang R S, Xie H W, Wang Y, Ye Z C 2010 Acta Phys. Sin. 59 2126 (in Chinese) [李荣华、孟卫民、彭应全、马朝柱、汪润生、谢宏伟、王颖、叶早晨 2010 物理学报 59 2126]

施引文献

[1]	Terao Y, Sasabe H, Adachi C 2007 Appl. Phys. Lett. 90 103515
[2]	Yoo S, Domercq B, Kippelen B 2004 Appl. Phys. Lett. 85 5427
[3]	Pandey A K, Nunzi J M 2006 Appl. Phys. Lett. 89 213506
[4]	Tao C L, Zhang X H, Dong M J, Liu Y Y, Sun S, Ou G P, Zhang F J, Zhang H L 2008 Chin. Phys. B 17 281
[5]	Yang J, Nguyen T Q 2007 Organic Electronics 8 566
[6]	Potscavage W J, Yoo S, Domercq B, Kippelen B 2007 Appl. Phys. Lett. 90 253511
[7]	Sullivan P, Jones T S 2008 Organic Electronics 9 656
[8]	Cantrell R, Clancy P 2008 Surface Science 602 3499
[9]	Peumans P, Forrest S R 2001 Appl. Phys. Lett. 79 126
[10]	Peumans P, Yakimov Y, Forrest S R 2003 Appl. Phys. Lett. 93 3693
[11]	Chan M Y, Lee C S, Lai S L, Fung M K, Wong F L, Sun H Y, Lau K M, Lee S T 2006 J. Appl. Phys. 100 094506
[12]	Song Q L, Li C M, Wang M L, Sun X Y, Hou X Y 2007 Appl. Phys. Lett. 90 071109
[13]	Tatsuo Mori, Kohei Kato 2007 Journal of Photopolymer Science and Technology 20 61
[14]	Wang N N, Yu J S, Lin H, Jiang Y D 2010 Chin. J.Chem. Phys. 23 84
[15]	Li Y W, Liu P Y, Hou L T, Wu B 2010 Acta Phys. Sin. 59 1248 (in Chinese) [李艳武、刘彭义、侯林涛、吴冰 2010 物理学报 59 1248] [16] Naka S, Okada H, Onnagawa H, Tsutsui T 2000 Appl. Phys. Lett. 76 197
[16]	Li R H, Meng W M, Peng Y Q, Ma C Z, Wang R S, Xie H W, Wang Y, Ye Z C 2010 Acta Phys. Sin. 59 2126 (in Chinese) [李荣华、孟卫民、彭应全、马朝柱、汪润生、谢宏伟、王颖、叶早晨 2010 物理学报 59 2126]

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