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SiC半超结垂直双扩散金属氧化物半导体场效应管（VDMOSFET）相对于 常规VDMOSFET在相同导通电阻下具有更大击穿电压. 在N型外延层上进行离子注入形成半超结结构中的P柱是制造SiC半超结VDMOSFET 的关键工艺. 本文通过二维数值仿真研究了离子注入导致的电荷失配对4H-SiC超结和半超结VDMOSFET 击穿电压的影响，在电荷失配程度为30%时出现半超结VDMOSFET的最大击穿电压. 在本文的器件参数下，P柱浓度偏差导致击穿电压降低15%时，半超结VDMOSFET柱区浓度偏差范围相对于超结VDMOSFET可提高69.5%，这意味着半超结VDMOSFET对柱区离子注入的控制要求更低，工艺制造难度更低.
[1] Xu J P, Li C X, Wu H P 2005 Acta Phys. Sin. 54 2918 (in Chinese) [徐静平, 李春霞, 吴海平 2005 物理学报 54 2918]
[2] Singh R, Cooper Jr J A, Melloch M R, Chow T P, Palmour J W 2002 IEEE Trans. Electron Dev. 49 665
[3] Casady J B, Agarwal A K, Rowland L B, Valek W F, Brandt C D 1997 Device Research Conference Digest Fort Collins, USA, June 23-25, 1997 p32
[4] Yu L C, Sheng K 2006 Solid-State Electron 50 1062
[5] Yang Y T, Geng Z H, Duan B X, Jia H J, Yu C, Ren L L 2010 Acta Phys. Sin. 59 566 (in Chinese) [杨银堂, 耿振海, 段宝兴, 贾护军, 余涔, 任丽丽 2010 物理学报 59 566]
[6] Fujihira T 1997 Jpn. J. Appl. Phys. 36 6254
[7] Cao L, Pu H B, Chen Z M, Zang Y 2012 Chin. Phys. B 21 017303
[8] Saito W, Omura I, Aida S, Koduki S, Izumisawa M, Ogura T 2003 Proceedings of IEEE 15th International Symposium on Power Semiconductor Devices and ICs Cambridge, UK, April 14-17, 2003 p45
[9] Ono S, Saito W, Takashita M, Kurushima S, Tokano K, Yamaguchi M 2007 Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs Jeju, Korea, May 27-30, 2007 p25
[10] Wang Y, Hu H F, Cheng C 2010 Superlattices Microstuct 47 314
[11] Yu L C, Sheng K 2008 IEEE Trans. Electron Dev. 55 1961
[12] Saito W, Omura I, Aida S, Koduki S, Izumisawa M, Yoshioka H, Ogura T 2005 IEEE Trans. Electron Dev. 52 2317
[13] Shenoy P M, Bhalla A, Dolny G M 1999 Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs Toronto, Ont, May 26-28, 1999 p99
[14] ISE I S E A 2004 ISE TCAD Release 10.0 DESSISTM (Zurich: ISE Integrated Systems Engineering AG) pp143-621
[15] Song Q W, Zhang Y M, Zhang Y M, Tang X Y 2012 Diamond Relat. Mater. 22 42
[16] Song Q W, Zhang Y M, Zhang Y M, Zhang Q, Guo H, Li Z Y, Wang Z X 2010 Chin. Phys. B 19 047201
[17] Baliga B J 2008 Fundamentals of Power Semiconductor Devices (New York: Springer Science + Business Media) pp310-311
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[1] Xu J P, Li C X, Wu H P 2005 Acta Phys. Sin. 54 2918 (in Chinese) [徐静平, 李春霞, 吴海平 2005 物理学报 54 2918]
[2] Singh R, Cooper Jr J A, Melloch M R, Chow T P, Palmour J W 2002 IEEE Trans. Electron Dev. 49 665
[3] Casady J B, Agarwal A K, Rowland L B, Valek W F, Brandt C D 1997 Device Research Conference Digest Fort Collins, USA, June 23-25, 1997 p32
[4] Yu L C, Sheng K 2006 Solid-State Electron 50 1062
[5] Yang Y T, Geng Z H, Duan B X, Jia H J, Yu C, Ren L L 2010 Acta Phys. Sin. 59 566 (in Chinese) [杨银堂, 耿振海, 段宝兴, 贾护军, 余涔, 任丽丽 2010 物理学报 59 566]
[6] Fujihira T 1997 Jpn. J. Appl. Phys. 36 6254
[7] Cao L, Pu H B, Chen Z M, Zang Y 2012 Chin. Phys. B 21 017303
[8] Saito W, Omura I, Aida S, Koduki S, Izumisawa M, Ogura T 2003 Proceedings of IEEE 15th International Symposium on Power Semiconductor Devices and ICs Cambridge, UK, April 14-17, 2003 p45
[9] Ono S, Saito W, Takashita M, Kurushima S, Tokano K, Yamaguchi M 2007 Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs Jeju, Korea, May 27-30, 2007 p25
[10] Wang Y, Hu H F, Cheng C 2010 Superlattices Microstuct 47 314
[11] Yu L C, Sheng K 2008 IEEE Trans. Electron Dev. 55 1961
[12] Saito W, Omura I, Aida S, Koduki S, Izumisawa M, Yoshioka H, Ogura T 2005 IEEE Trans. Electron Dev. 52 2317
[13] Shenoy P M, Bhalla A, Dolny G M 1999 Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs Toronto, Ont, May 26-28, 1999 p99
[14] ISE I S E A 2004 ISE TCAD Release 10.0 DESSISTM (Zurich: ISE Integrated Systems Engineering AG) pp143-621
[15] Song Q W, Zhang Y M, Zhang Y M, Tang X Y 2012 Diamond Relat. Mater. 22 42
[16] Song Q W, Zhang Y M, Zhang Y M, Zhang Q, Guo H, Li Z Y, Wang Z X 2010 Chin. Phys. B 19 047201
[17] Baliga B J 2008 Fundamentals of Power Semiconductor Devices (New York: Springer Science + Business Media) pp310-311
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