电荷失配对SiC半超结垂直双扩散金属氧化物半导体场效应管击穿电压的影响

杨帅; 汤晓燕; 张玉明; 宋庆文; 张义门

doi:10.7498/aps.63.208501

摘要

SiC半超结垂直双扩散金属氧化物半导体场效应管（VDMOSFET）相对于常规VDMOSFET在相同导通电阻下具有更大击穿电压. 在N型外延层上进行离子注入形成半超结结构中的P柱是制造SiC半超结VDMOSFET 的关键工艺. 本文通过二维数值仿真研究了离子注入导致的电荷失配对4H-SiC超结和半超结VDMOSFET 击穿电压的影响，在电荷失配程度为30%时出现半超结VDMOSFET的最大击穿电压. 在本文的器件参数下，P柱浓度偏差导致击穿电压降低15%时，半超结VDMOSFET柱区浓度偏差范围相对于超结VDMOSFET可提高69.5%，这意味着半超结VDMOSFET对柱区离子注入的控制要求更低，工艺制造难度更低.

关键词:

SiC /
半超结 /
电荷失配

Abstract

SiC semi-superjunction vertical double diffused MOS (VDMOSFET) has higher breakdown voltage than conventional SiC VDMOSFET with the same on-resistance. The ion implantation to form p pillar region on N-type epilayer is a key process to form semi-superjunction stucture. The influences of charge imbalance induced by ion implantation on breakdown voltages of 4H-SiC superjunction and semi-superjunction VDMOSFET are investigated through two-dimensional numerical simulation, and the largest breakdown voltage is obtained when charge imbalance is 30%. With the same structure parameters of devices, when breakdown voltage decreases by 15% due to the deviation of doping concentration in P pillars, the tolerance of doping concentration for the semi-superjunction VDMOSFET is 69.5% higher than for superjunction VDMOSFET which means that less precise process control of ion implantation for semi-superjunction VDMOSFET, will be required with less difficulty in the manufacture of pillars.

Keywords:

作者及机构信息

1.
西安电子科技大学微电子学院, 宽禁带半导体材料与器件实验室, 西安 710071;

2.
西安电子科技大学先进材料与纳米科技学院, 西安 710071

基金项目: 国家自然科学基金（批准号：61274079，61176070）、陕西省自然科学基金（批准号：2013JQ8012）、高等学校博士学科点专项科研基金（批准号：20130203120017，20110203110010）和教育部重大专项（批准号：625010101）资助的课题.

Authors and contacts

1.
Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;

2.
School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61274079, 61176070), the Natural Science Foundation of Shananxi, China (Grant No. 2013JQ8012), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant Nos. 20130203120017, 20110203110010), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

参考文献

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[2]	Singh R, Cooper Jr J A, Melloch M R, Chow T P, Palmour J W 2002 IEEE Trans. Electron Dev. 49 665
[3]	Casady J B, Agarwal A K, Rowland L B, Valek W F, Brandt C D 1997 Device Research Conference Digest Fort Collins, USA, June 23-25, 1997 p32
[4]	Yu L C, Sheng K 2006 Solid-State Electron 50 1062
[5]	Yang Y T, Geng Z H, Duan B X, Jia H J, Yu C, Ren L L 2010 Acta Phys. Sin. 59 566 (in Chinese) [杨银堂, 耿振海, 段宝兴, 贾护军, 余涔, 任丽丽 2010 物理学报 59 566]
[6]	Fujihira T 1997 Jpn. J. Appl. Phys. 36 6254
[7]	Cao L, Pu H B, Chen Z M, Zang Y 2012 Chin. Phys. B 21 017303
[8]	Saito W, Omura I, Aida S, Koduki S, Izumisawa M, Ogura T 2003 Proceedings of IEEE 15th International Symposium on Power Semiconductor Devices and ICs Cambridge, UK, April 14-17, 2003 p45
[9]	Ono S, Saito W, Takashita M, Kurushima S, Tokano K, Yamaguchi M 2007 Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs Jeju, Korea, May 27-30, 2007 p25
[10]	Wang Y, Hu H F, Cheng C 2010 Superlattices Microstuct 47 314
[11]	Yu L C, Sheng K 2008 IEEE Trans. Electron Dev. 55 1961
[12]	Saito W, Omura I, Aida S, Koduki S, Izumisawa M, Yoshioka H, Ogura T 2005 IEEE Trans. Electron Dev. 52 2317
[13]	Shenoy P M, Bhalla A, Dolny G M 1999 Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs Toronto, Ont, May 26-28, 1999 p99
[14]	ISE I S E A 2004 ISE TCAD Release 10.0 DESSISTM (Zurich: ISE Integrated Systems Engineering AG) pp143-621
[15]	Song Q W, Zhang Y M, Zhang Y M, Tang X Y 2012 Diamond Relat. Mater. 22 42
[16]	Song Q W, Zhang Y M, Zhang Y M, Zhang Q, Guo H, Li Z Y, Wang Z X 2010 Chin. Phys. B 19 047201
[17]	Baliga B J 2008 Fundamentals of Power Semiconductor Devices (New York: Springer Science + Business Media) pp310-311

施引文献

[1]	Xu J P, Li C X, Wu H P 2005 Acta Phys. Sin. 54 2918 (in Chinese) [徐静平, 李春霞, 吴海平 2005 物理学报 54 2918]
[2]	Singh R, Cooper Jr J A, Melloch M R, Chow T P, Palmour J W 2002 IEEE Trans. Electron Dev. 49 665
[3]	Casady J B, Agarwal A K, Rowland L B, Valek W F, Brandt C D 1997 Device Research Conference Digest Fort Collins, USA, June 23-25, 1997 p32
[4]	Yu L C, Sheng K 2006 Solid-State Electron 50 1062
[5]	Yang Y T, Geng Z H, Duan B X, Jia H J, Yu C, Ren L L 2010 Acta Phys. Sin. 59 566 (in Chinese) [杨银堂, 耿振海, 段宝兴, 贾护军, 余涔, 任丽丽 2010 物理学报 59 566]
[6]	Fujihira T 1997 Jpn. J. Appl. Phys. 36 6254
[7]	Cao L, Pu H B, Chen Z M, Zang Y 2012 Chin. Phys. B 21 017303
[8]	Saito W, Omura I, Aida S, Koduki S, Izumisawa M, Ogura T 2003 Proceedings of IEEE 15th International Symposium on Power Semiconductor Devices and ICs Cambridge, UK, April 14-17, 2003 p45
[9]	Ono S, Saito W, Takashita M, Kurushima S, Tokano K, Yamaguchi M 2007 Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs Jeju, Korea, May 27-30, 2007 p25
[10]	Wang Y, Hu H F, Cheng C 2010 Superlattices Microstuct 47 314
[11]	Yu L C, Sheng K 2008 IEEE Trans. Electron Dev. 55 1961
[12]	Saito W, Omura I, Aida S, Koduki S, Izumisawa M, Yoshioka H, Ogura T 2005 IEEE Trans. Electron Dev. 52 2317
[13]	Shenoy P M, Bhalla A, Dolny G M 1999 Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs Toronto, Ont, May 26-28, 1999 p99
[14]	ISE I S E A 2004 ISE TCAD Release 10.0 DESSISTM (Zurich: ISE Integrated Systems Engineering AG) pp143-621
[15]	Song Q W, Zhang Y M, Zhang Y M, Tang X Y 2012 Diamond Relat. Mater. 22 42
[16]	Song Q W, Zhang Y M, Zhang Y M, Zhang Q, Guo H, Li Z Y, Wang Z X 2010 Chin. Phys. B 19 047201
[17]	Baliga B J 2008 Fundamentals of Power Semiconductor Devices (New York: Springer Science + Business Media) pp310-311

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