| 引用本文: |
|
| Citation: |
|
计量
- 文章访问数: 2420
- PDF下载量: 560
- 被引次数: 0
物理学报. 1989, 38(5): 728-734.
doi: 10.7498/aps.38.728.
Mo/Si体系的离子束混合机制研究
- 收稿日期: 1988-06-11
- 刊出日期: 2005-07-08
摘要: 本文采用卢瑟福背散射(RBS)分析技术详细测量了Mo/Si体系在Ar+和Xe7+离子束轰击下界面混合和反应随温度、剂量和剂量率的依赖关系。得到了许多新的结果。结果表明,以前的空位扩散机制、单级联间隙原子扩散机制和热峰模型都不能解释Mo/Si体系的离子束混合。我们结合固体扩散理论提出了间隙原子扩散和反应机制,圆满地解释了实验结果。
English Abstract
MECHANISM OF ION BEAM MIXING OF Mo LAYER ON Si
- Received Date:
11 June 1988
- Published Online:
08 July 2005
Abstract: Backscattering spectrometry is used to systematically investigate the temperature, dose and dose-rate dependences of Mo/Si atomic mixing and reaction induced by 170 keV Ar+ ions and 300 keV Xe2+ ions. These results show that the ion beam mixing mechanism of Mo/Si system is not vacancy diffusion and intra-cascade interstitial diffusion, and the thermal spike model also does not apply. We suggest that thhe mechanism of Mo/Si atomic mixing induced by ion implantation should be interstitial diffusion and give a reaction model. Based on this concept, the experimental results can be explained.
下载: