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利用metal vapor vacuum arc离子源产生的C+离子,注入单晶Si衬底,得到了SiC埋层.利用X射线光电子能谱,研究了SiC埋层中Si2p的特征能量损失谱.结果表明:Si2p的特征能量损失谱依赖于SiC埋层中C原子的浓度分布,并且与SiC埋层的有序度对应.SiC buried layers were snythesized by a metal vapor vacuum arc ion source,with C+ ions implanted into crystalline Si substrates.According to X-ray photoelectron spectroscopy,the characteristic electron energy loss spectra of the SiC buried layers were studied.It was found that the characteristic electron energy loss spectra depend on the profiles of the carbon content,and correlate well with the order of the buried layers.
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