单行载流子光电探测器中空间电荷屏蔽效应理论分析和实验研究

郭剑川; 左玉华; 张云; 张岭梓; 成步文; 王启明

doi:10.7498/aps.59.4524

摘要

本文优化设计和外延生长了一种单行载流子(UTC)光电探测器有源区结构,并且采用微电子工艺制备了台面尺寸为30 μm的UTC光电探测器.同时,采用了漂移-扩散模型对该有源区结构进行了理论模拟,从载流子浓度和空间电场角度重点分析研究了空间电荷屏蔽效应对UTC光电探测器直流饱和特性影响的物理机理.UTC光电探测器理论模拟结果与实测数据基本相符.

关键词:

A new optimized structure of an UTC (uni-traveling-carrier) photodiode is developed and epitaxied by metal-organic chemical vapor deposition. We fabricated a UTC photodiode of 30 μm in diameter. Theoretical simulation based on drift-diffusion model was used to analyze the space-charge-screening effect in UTC photodiode primarily in two aspects: the carrier concentrations and the space electric field. The simulation results were generally in agreement with the experimental data.

Keywords:

作者及机构信息

1.
中国科学院半导体研究所集成光电子学国家重点实验室,北京 100086

基金项目: 国家重点基础研究发展计划(批准号:2006CB302802,2007CB613404)资助的课题.

Authors and contacts

1.
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor,Chinese Academy of Sciences, Beijing 100086, China

参考文献

[1]	Ozeki T, Hara E H 1976 Electron. Lett. 12 80
[2]	Humphreys D A, Lobbett R A 1988 IEE Proceedings J. Optoelectronics 135 45
[3]	Esman R D, Williams K J 1990 IEEE Photon. Technol. Lett. 2 502
[4]	Williams K J, Esman R D, Dagenais M 1994 IEEE Photon. Technol. Lett. 5 639
[5]	Dentan M, de Cremoux B 1990 IEEE J. Lightw. Technol. 8 1137
[6]	Duan N, Wang X, Li N, Liu H D, Campbell J C 2006 IEEE J. Quantum Elect. 12 1255
[7]	Williams K J, Esman R D 1998 IEEE Photon. Technol. Lett. 7 1015
[8]	Jiang H, Yu P K L 1998 IEEE Photon. Technol. Lett. 11 1608
[9]	Williams K J, Goetz P G 2000 IEEE International Topical Meeting on Microwave Photonics Oxford, UK, September 11—13 , 2000 P221
[10]	Juodawlkis P W, O’Donnell F J, Hargreaves J J, Oakley D C, Napoleone A, Groves S H, Mahoney L J, Molvar K M, Missaggia L J, Donnelly J P, Williamson R C, Twichell J C 2002 The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Glasgow, Scotland, UK, November 10—14 , 2002 P426
[11]	Guo J C, Zuo Y H, Zhang Y, Ding W C, Cheng B W, Yu J Z, Wang Q M 2007 IEEE J. Lightw. Technol. 9 2783
[12]	Windhorn T H, Cook L W, Stillman G E 1982 IEEE Electron. Dev. Lett. 3 18
[13]	Hill P, Schlafer J, Powazinik W, Urban M, Eichen E, Olshansky R 1987 Appl. Phys. Lett. 18 1260
[14]	Xia L C, Gao X J 2004 Semiconductor Optoelectronics 3 169(in Chinese)[夏力臣、高新江 2004半导体光电 3 169]
[15]	Zhang Y X, Liao Z Y, Wang W 2009 Chin. Phys. B 18 2393
[16]	Ishibashi T, Shimizu N 1997 Proc. Ultrafast Electron. Optoelectron. 13 83

施引文献

[1]	Ozeki T, Hara E H 1976 Electron. Lett. 12 80
[2]	Humphreys D A, Lobbett R A 1988 IEE Proceedings J. Optoelectronics 135 45
[3]	Esman R D, Williams K J 1990 IEEE Photon. Technol. Lett. 2 502
[4]	Williams K J, Esman R D, Dagenais M 1994 IEEE Photon. Technol. Lett. 5 639
[5]	Dentan M, de Cremoux B 1990 IEEE J. Lightw. Technol. 8 1137
[6]	Duan N, Wang X, Li N, Liu H D, Campbell J C 2006 IEEE J. Quantum Elect. 12 1255
[7]	Williams K J, Esman R D 1998 IEEE Photon. Technol. Lett. 7 1015
[8]	Jiang H, Yu P K L 1998 IEEE Photon. Technol. Lett. 11 1608
[9]	Williams K J, Goetz P G 2000 IEEE International Topical Meeting on Microwave Photonics Oxford, UK, September 11—13 , 2000 P221
[10]	Juodawlkis P W, O’Donnell F J, Hargreaves J J, Oakley D C, Napoleone A, Groves S H, Mahoney L J, Molvar K M, Missaggia L J, Donnelly J P, Williamson R C, Twichell J C 2002 The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Glasgow, Scotland, UK, November 10—14 , 2002 P426
[11]	Guo J C, Zuo Y H, Zhang Y, Ding W C, Cheng B W, Yu J Z, Wang Q M 2007 IEEE J. Lightw. Technol. 9 2783
[12]	Windhorn T H, Cook L W, Stillman G E 1982 IEEE Electron. Dev. Lett. 3 18
[13]	Hill P, Schlafer J, Powazinik W, Urban M, Eichen E, Olshansky R 1987 Appl. Phys. Lett. 18 1260
[14]	Xia L C, Gao X J 2004 Semiconductor Optoelectronics 3 169(in Chinese)[夏力臣、高新江 2004半导体光电 3 169]
[15]	Zhang Y X, Liao Z Y, Wang W 2009 Chin. Phys. B 18 2393
[16]	Ishibashi T, Shimizu N 1997 Proc. Ultrafast Electron. Optoelectron. 13 83

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