一种基于双栅材料的单极性类金属氧化物半导体碳纳米管场效应管设计方法

周海亮; 张民选; 方粮

doi:10.7498/aps.59.5010

摘要

由于导电沟道-源/漏电极界面处可能发生的载流子带间隧穿,传统类金属氧化物半导体(MOS)碳纳米管场效应管呈现双极性传输特性,极大影响了器件性能的提高及其在电路中的应用.为获得具有理想单极性传输特性的类MOS碳纳米管场效应管,本文提出了一种基于双栅材料的器件设计方法.模拟结果表明,通过合理选取调节电极材料,在不影响器件亚阈值斜率的同时,该设计方法不仅能使开关电流比增大6—9个数量级,有效调节阈值范围,而且能有效消除传统类MOS碳纳米管场效应管的双极性传输特性.进一步研究表明,该设计所获得的器件性能提高与调节

关键词:

Abstract

Due to carrier band-to-band tunneling (BTBT) through channel-source/drain contacts, traditional MOS(metal oxide semiconductor)-like carbon nanotube field effect transistors (CNFETs) suffer from quasi-ambipolar transport property, leaving much negative impacts on device performance and its application in circuits. To suppress such quasi-ambipolar behavior, a novel device design based on dual-gate-material device structure is proposed. The modeling results show that, with proper choice of tuning gate material, this device design can increase the ON-OFF current ratio by 6—9 orders of magnitude, tune the threshold region effectively and keep the sub-threshold slope immune from it. In addition, the quasi-ambipolar transport characteristic of C-CNFETs can be suppressed effectively using such novel device design. Further study reveals that the performance of the proposed design depends highly on the choice of tuning gate material, and the quantum capacitance in CNFETs has great effect on not only its subthreshold slope but also its transport polarity.

Keywords:

dual gate material /
carbon nanotube-field effect transistors /
band to band tunneling /
ambipolar transport

作者及机构信息

1.
国防科学技术大学计算机学院并行与分布处理重点实验室,长沙 410073

基金项目: 国家高技术研究发展计划(批准号:2009AA01Z114,2009AA01Z124)资助的课题.

Authors and contacts

1.
Key Laboratory of Parallel and Distribution Processing, School of Computer Science, National University of Defense Technology, Changsha 410073, China

参考文献

[1]	Martel R, Wong H S, Chan K, Avouris P 2001 IEDM Tech. Digest Washington, p159
[2]	Zhang Z X, Hou S M, Zhao X Y, Zhang H, Sun J P, Liu W M, Xue Z Q, Shi Z J, Gu Z N 2002 Acta Phys. Sin. 51 434 (in Chinese) [张兆祥、侯士敏、赵兴钰、张浩、孙建平、刘惟敏、薛增泉、施祖进、顾镇南 2002 物理学报 51 434]
[3]	Tang N S, Yan X H, Ding J H 2005 Acta Phys. Sin. 54 333 (in Chinese) [唐娜斯、颜晓红、丁建文 2004 物理学报 54 333 ]
[4]	Javey A, Guo J, Wang Q, Lundstron M, Dai H 2003 Lett. Nature 424 654
[5]	Heinze S, Tersoff J, Martel R, Derycke V, Appenzeller J, Avouris P 2002 Phys. Rev. Lett. 89 106801
[6]	Chen J, Klinke C, Afzali A, Chan K, Avouris P 2004 IEDM Tech. Digest San Francisco p695
[7]	Chen J, Klinke C, Afzali A, Avouris P 2005 Appl. Phys. Lett. 86 123108
[8]	Lin Y M, Appenzeller J, Knoch J, Avouris P 2005 IEEE Trans. Nano. 4 481
[9]	Pourfath M, Ungersboeck E, Gehring A, Kosina H 2005 J. Computational Electronics 4 75
[10]	Appenzeller J, Lin Y M, Knock J, Chen Z H, Aviouris Ph 2005 IEEE Trans. Electron Devices 52 122568
[11]	Chen Z H, Farmer D, Xu S, Gordon R, Avouris P, Appenzeller J 2008 IEEE Trans. Device Letters 29 183
[12]	Nosho Y, Ohno Y, Kishimoto S, Mizutani T 2006 International Microprocess and Nanotechnology Conference Kamakura city of Japan, Oct., 2006 p247
[13]	Javey A, Tu R, Farmer D, Guo J, Gordon D, Dai H 2005 Nano Lett. 5 345
[14]	Long W, Ou H, Kuo J M 1999 IEEE Trans. Electron Device 46 865
[15]	Kumar M J, Chaudhry A 2004 IEEE Trans. Electron Devices 51 569
[16]	Li Z C 2009 Chin. Phys. Lett. 26 018502
[17]	Lee J H, Lee J B, Lee J H 1997 U.S.Patent 5670400
[18]	James J C, Luigi C, Mark R V 2009 U.S.Patent 7612422
[19]	Luan S Z, Liu H X, Jia R X 2009 Sci. Chin. Ser. E 52 2400
[20]	Xiang Q, Jeon J 2001 U. S. Patent 6187657
[21]	Muhammad M H, Naim M, Joel B, Jason S, David B, Zhibo Z 2005 Electrochem. Solid-State Lett. 28 333
[22]	Luryi S 1988 Appl. Phys. Lett. 52 501
[23]	Zhou H L, Zhang M X, Hao Y 2009 IEEE International NanoElectronics Conference, HongKong, China, Jan. 3—8, 2009 p53
[24]	Venugopal R, Ren Z, Datta S, Lundstrom M S, Jovanovic D 2002 J. Appl. Phys. 92 3730
[25]	Guo J, Ali J, Dai H J, Mark L 2004 IEDM Tech. Digest San Francisco, Dec, 2004 pp703—706
[26]	Fiori G, Iannaccone G, Klimeck G 2006 IEEE Trans. Electron Device 53 1782
[27]	Fiori G, Iannaccone G, Klimeck G 2007 IEEE Trans. Electron Device 6 475
[28]	Appzenzeller J, Knoch J, Radosavljevic, Avouris P 2004 Phys. Rev. Lett. 92 6802
[29]	Knoch J, Appzenzeller J 2008 Phys. Stat. Sol. (a) 205 679
[30]	Yu B, Chang L, Ahmed S, Wang H 2002 IEEE Trans. Electron. 85 1052
[31]	Avouris P 2002 Chem. Phys. 281 429
[32]	Yong K F, Frederikse H P R 1973 J. Phys.Chem.Ref.Data 2 313
[33]	John D L, Castro L C, Pulfrey D L 2004 J. Appl. Phys. 96 65180
[34]	Rahman A, Guo J, Datta S, Lundstrom M S 2003 IEEE Trans. Electron Devices 50 1853
[35]	Burke P J 2003 IEEE Trans. Nanotechnol. 2 55

施引文献

[1]	Martel R, Wong H S, Chan K, Avouris P 2001 IEDM Tech. Digest Washington, p159
[2]	Zhang Z X, Hou S M, Zhao X Y, Zhang H, Sun J P, Liu W M, Xue Z Q, Shi Z J, Gu Z N 2002 Acta Phys. Sin. 51 434 (in Chinese) [张兆祥、侯士敏、赵兴钰、张浩、孙建平、刘惟敏、薛增泉、施祖进、顾镇南 2002 物理学报 51 434]
[3]	Tang N S, Yan X H, Ding J H 2005 Acta Phys. Sin. 54 333 (in Chinese) [唐娜斯、颜晓红、丁建文 2004 物理学报 54 333 ]
[4]	Javey A, Guo J, Wang Q, Lundstron M, Dai H 2003 Lett. Nature 424 654
[5]	Heinze S, Tersoff J, Martel R, Derycke V, Appenzeller J, Avouris P 2002 Phys. Rev. Lett. 89 106801
[6]	Chen J, Klinke C, Afzali A, Chan K, Avouris P 2004 IEDM Tech. Digest San Francisco p695
[7]	Chen J, Klinke C, Afzali A, Avouris P 2005 Appl. Phys. Lett. 86 123108
[8]	Lin Y M, Appenzeller J, Knoch J, Avouris P 2005 IEEE Trans. Nano. 4 481
[9]	Pourfath M, Ungersboeck E, Gehring A, Kosina H 2005 J. Computational Electronics 4 75
[10]	Appenzeller J, Lin Y M, Knock J, Chen Z H, Aviouris Ph 2005 IEEE Trans. Electron Devices 52 122568
[11]	Chen Z H, Farmer D, Xu S, Gordon R, Avouris P, Appenzeller J 2008 IEEE Trans. Device Letters 29 183
[12]	Nosho Y, Ohno Y, Kishimoto S, Mizutani T 2006 International Microprocess and Nanotechnology Conference Kamakura city of Japan, Oct., 2006 p247
[13]	Javey A, Tu R, Farmer D, Guo J, Gordon D, Dai H 2005 Nano Lett. 5 345
[14]	Long W, Ou H, Kuo J M 1999 IEEE Trans. Electron Device 46 865
[15]	Kumar M J, Chaudhry A 2004 IEEE Trans. Electron Devices 51 569
[16]	Li Z C 2009 Chin. Phys. Lett. 26 018502
[17]	Lee J H, Lee J B, Lee J H 1997 U.S.Patent 5670400
[18]	James J C, Luigi C, Mark R V 2009 U.S.Patent 7612422
[19]	Luan S Z, Liu H X, Jia R X 2009 Sci. Chin. Ser. E 52 2400
[20]	Xiang Q, Jeon J 2001 U. S. Patent 6187657
[21]	Muhammad M H, Naim M, Joel B, Jason S, David B, Zhibo Z 2005 Electrochem. Solid-State Lett. 28 333
[22]	Luryi S 1988 Appl. Phys. Lett. 52 501
[23]	Zhou H L, Zhang M X, Hao Y 2009 IEEE International NanoElectronics Conference, HongKong, China, Jan. 3—8, 2009 p53
[24]	Venugopal R, Ren Z, Datta S, Lundstrom M S, Jovanovic D 2002 J. Appl. Phys. 92 3730
[25]	Guo J, Ali J, Dai H J, Mark L 2004 IEDM Tech. Digest San Francisco, Dec, 2004 pp703—706
[26]	Fiori G, Iannaccone G, Klimeck G 2006 IEEE Trans. Electron Device 53 1782
[27]	Fiori G, Iannaccone G, Klimeck G 2007 IEEE Trans. Electron Device 6 475
[28]	Appzenzeller J, Knoch J, Radosavljevic, Avouris P 2004 Phys. Rev. Lett. 92 6802
[29]	Knoch J, Appzenzeller J 2008 Phys. Stat. Sol. (a) 205 679
[30]	Yu B, Chang L, Ahmed S, Wang H 2002 IEEE Trans. Electron. 85 1052
[31]	Avouris P 2002 Chem. Phys. 281 429
[32]	Yong K F, Frederikse H P R 1973 J. Phys.Chem.Ref.Data 2 313
[33]	John D L, Castro L C, Pulfrey D L 2004 J. Appl. Phys. 96 65180
[34]	Rahman A, Guo J, Datta S, Lundstrom M S 2003 IEEE Trans. Electron Devices 50 1853
[35]	Burke P J 2003 IEEE Trans. Nanotechnol. 2 55

计量

文章访问数: 6617
PDF下载量: 646
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板