真空热退火温度对单相Ag2O薄膜微结构和光学性质的影响

张增院; 郜小勇; 冯红亮; 马姣民; 卢景霄

doi:10.7498/aps.60.036107

摘要

利用直流磁控反应溅射技术在玻璃衬底上沉积了单相Ag2O薄膜,并采用真空热退火对单相Ag2O薄膜在不同热退火温度 (T A) 下进行了1 h热处理.利用X射线衍射谱、扫描电子显微镜和分光光度计研究了 T A对单相Ag2O薄膜微结构和光学性质的影响.研究结果表明, TA= 300 ℃ 时Ag2O薄膜中开始出现Ag纳米颗粒,且随着 T A的升高薄膜中Ag的含量

关键词:

A single-phased Ag2O film was deposited on glass substrate by direct-current reactive magnetron sputtering, and was then vacuum thermally annealed at different annealing temperatures (T A) for 1 hour. Effect of the TAon the films microstructure and optical properties was investigated by X-ray diffractometry, scanning electron microscopy and spectrophotometry. The results indicate that Ag nano-scaled particles begin to appear in the annealed Ag2O film at TA= 300 ℃. The Ag content obviously increases with increasing TA, and in particular, Ag2O phase is completely transformed into Ag at T A = 475 ℃. The evolution of the films surface morphology from dense to loose indicates that the diffusion and escape of O atoms from film surface accompanied the thermal decomposition reaction of Ag2O to Ag particles during the vacuum thermal annealing. The changes of the films transmissivity, reflectivity and absorptivity with T A are attributed to the thermal decomposition of Ag2O and the films structure evolution during annealing.

Keywords:

作者及机构信息

1.
郑州大学物理工程学院材料物理教育部重点实验室,郑州 450052

基金项目: 国家自然科学基金(批准号:60807001),国家重点基础研究发展计划(973)项目(批准号:2011CB201605)和河南省教育厅自然科学研究计划项目(批准号: 2010A140017)资助的课题.

Authors and contacts

1.
Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China

参考文献

[1]	Fuji H, Tominaga J, Men L, Nakano T, Katayama H, Atoda N 2000 Jpn. J. Appl. Phys. 39 980
[2]	报 34 1158
[3]	Pierson J F, Rousselot C 2005 Surf. Coat. Technol. 200 276
[4]	Abe Y, Hasegawa T, Kawamura M, Sasaki K 2004 Vacuum 76 1
[5]	Chiu Y, Rambabu U, Hsu M H, Shieh H P D, Chen C Y, Lin H H 2003 J. Appl. Phys. 94 1996
[6]	Chuang H J, Ko H W 1989 Proc. Natl. Sci. Counc. China 13 145
[7]	Zhang X Y, Pan X Y, Zhang Q F, Xu B X, Jiang H B, Liu C L, Gong Q H, Wu J L 2003 Acta. Phys. Chim. Sin. 19 203 (in Chinese) [张西尧、潘新宇、张琦锋、许北雪、蒋红兵、刘春玲、龚旗煌、吴锦雷 2003 物理化学学报 19 203]
[8]	郜小勇、刘萍、陈永生、王海燕、卢景霄 2005 人工晶体学
[9]	Gao X Y, Feng H L, Ma J M, Zhang Z Y,Lu J X, Chen Y S, Yang S E, Gu J H 2010 Physica B 405 1922
[10]	Gao X Y, Feng H L, Zhang Z Y, Ma J M, Lu J X 2010 Chin. Phys. Lett. 27 026804
[11]	Gao X Y, Feng H L, Ma J M, Zhang Z Y 2010 Chin. Phys. B 9 090701
[12]	Zhang Z Y, Gao X Y, Feng H L, Ma J M, Lu J X 2011 Acta Phys. Sin. 60 016110 (in Chinese) [张增院、郜小勇、冯红亮、马娇民、卢景霄 2011 物理学报 60 016110]
[13]	Singh R, Fakhraddin M, Poole K F 2000 Appl. Surf. Sci. 168 198

施引文献

[1]	Fuji H, Tominaga J, Men L, Nakano T, Katayama H, Atoda N 2000 Jpn. J. Appl. Phys. 39 980
[2]	报 34 1158
[3]	Pierson J F, Rousselot C 2005 Surf. Coat. Technol. 200 276
[4]	Abe Y, Hasegawa T, Kawamura M, Sasaki K 2004 Vacuum 76 1
[5]	Chiu Y, Rambabu U, Hsu M H, Shieh H P D, Chen C Y, Lin H H 2003 J. Appl. Phys. 94 1996
[6]	Chuang H J, Ko H W 1989 Proc. Natl. Sci. Counc. China 13 145
[7]	Zhang X Y, Pan X Y, Zhang Q F, Xu B X, Jiang H B, Liu C L, Gong Q H, Wu J L 2003 Acta. Phys. Chim. Sin. 19 203 (in Chinese) [张西尧、潘新宇、张琦锋、许北雪、蒋红兵、刘春玲、龚旗煌、吴锦雷 2003 物理化学学报 19 203]
[8]	郜小勇、刘萍、陈永生、王海燕、卢景霄 2005 人工晶体学
[9]	Gao X Y, Feng H L, Ma J M, Zhang Z Y,Lu J X, Chen Y S, Yang S E, Gu J H 2010 Physica B 405 1922
[10]	Gao X Y, Feng H L, Zhang Z Y, Ma J M, Lu J X 2010 Chin. Phys. Lett. 27 026804
[11]	Gao X Y, Feng H L, Ma J M, Zhang Z Y 2010 Chin. Phys. B 9 090701
[12]	Zhang Z Y, Gao X Y, Feng H L, Ma J M, Lu J X 2011 Acta Phys. Sin. 60 016110 (in Chinese) [张增院、郜小勇、冯红亮、马娇民、卢景霄 2011 物理学报 60 016110]
[13]	Singh R, Fakhraddin M, Poole K F 2000 Appl. Surf. Sci. 168 198

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