氧化锌锡薄膜晶体管的研究

王雄; 才玺坤; 原子健; 朱夏明; 邱东江; 吴惠桢

doi:10.7498/aps.60.037305

摘要

在ITO玻璃基底上用射频磁控溅射技术生长氧化锌锡(ZnSnO)沟道有源层、用PECVD生长SiO2薄膜作为薄膜晶体管的栅绝缘层研制了薄膜晶体管(TFT), 器件的场效应迁移率最高达到μn=9.1 cm2/(V ·s),阈值电压-2 V,电流开关比为104.

关键词:

Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9.1 cm2/V ·s, threshold voltage of -2 V, and current on/off ratio of 104.

Keywords:

作者及机构信息

1.
浙江大学物理学系,硅材料国家重点实验室,杭州 310027

基金项目: 国家自然科学基金(批准号:10974174), 国家重点基础研究发展计划项目(批准号:2011CB925603),浙江省自然科学基金(批准号:Z6100117, Y4080171)资助的课题.

Authors and contacts

1.
Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China

参考文献

[1]	Liu Y R, Wang Z X, Yu J L, Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣、王智欣、虞佳乐、徐海红 2009 物理学报 58 8566]
[2]	Transactions on Electron Devices 54 2856
[3]	Yuan G C, Xu Z, Zhao S L, Zhang F J, Jiang W W, Huang J Z, Song D D, Zhu H N, Huang J Y, Xu S 2008 Acta Phys. Sin. 57 5911 (in Chinese) [袁广才、徐征、赵谡玲、张福 [3] Gupta D, Anand M, Ryu S W, Choi Y K, Yoo S 2008 Appl. Phys. Lett. 93 224106
[4]	Carcia P F, McLean R S, Reilly M H, Nunes G 2003 Appl. Phys. Lett. 82 1117
[5]	Masuda S, Kitamura K, Okumura Y, Miyatake S, Tabata H, Kawai T 2003 J. Appl. Phys. 93 1624
[6]	Oh M S, Han J I, Lee K, Lee B H, Sung M M, Im S 2010 Electrochemical and Solid-State Letters 13 194
[7]	Avis C, Kim S H, Hur J H, Jang J, Milne W I 2009 Electrochemical and Solid-State Letters 12 93
[8]	Zhang Q, Saraf L V, Hua F 2007 Nanotechnology 18 195204
[9]	Sun J, Lu A X, Wang L P, Hu Y, Wan Q 2009 Nanotechnology 20 335204
[10]	Lim W, Douglas E A, Lee J, Jang J H, Craciun V 2009 J. Vac. Sci. Technol. B 27 2128
[11]	Paine D C, Yaglioglu B, Beiley Z, Lee S H 2008 Thin Solid Film. 516 5894
[12]	Wu H Z, Liang J, Jin G F, Lao Y F, Xu T L 2007 IEEE
[13]	Zhu X M, Wu H Z, Wang S J, Zhang Y Y, Cai C F, Si J X, Yuan Z J, Du X Y, Dong S R 2009 J. Semicond. 30 033001
[14]	Cheng S H, Ling Z Y, Huang F 2002 Acta Phys. Sin. 51 668 (in Chinese) [程珊华、宁兆元、黄峰 2002 物理学报 51 668]
[15]	Xu T N, Wu H Z, Zhang Y Y,Wang X,Zhu X M,Yuan Z J 2010 Acta Phys. Sin. 59 616 (in Chinese) [徐天宁、吴惠桢、张莹莹、王雄、朱夏明、原子健 2010 物理学报 59 616]
[16]	Chiang H Q, Wager J F, Hoffman R L, Jeong J, Keszler D A 2005 Appl. Phys. Lett. 86 013503
[17]	Jackson W B, Hoffman R L, Herman G S 2005 Appl. Phys. Lett. 87 193503
[18]	Grrn P, Hlzer P, Riedl T, Kowalsky W, Wang J, Weimann T, Hinze P, Kipp S 2007 Appl. Phys. Lett. 90 063502
[19]	Han S Y, Lee D H, Herman G S, Chang C H 2009 J. Display Technology 5 520
[20]	Chiang H Q, McFarlane B R, Hong D, Presley R E, Wager J F 2008 Journal of Non-Crystalline Solids 354 2826

施引文献

[1]	Liu Y R, Wang Z X, Yu J L, Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣、王智欣、虞佳乐、徐海红 2009 物理学报 58 8566]
[2]	Transactions on Electron Devices 54 2856
[3]	Yuan G C, Xu Z, Zhao S L, Zhang F J, Jiang W W, Huang J Z, Song D D, Zhu H N, Huang J Y, Xu S 2008 Acta Phys. Sin. 57 5911 (in Chinese) [袁广才、徐征、赵谡玲、张福 [3] Gupta D, Anand M, Ryu S W, Choi Y K, Yoo S 2008 Appl. Phys. Lett. 93 224106
[4]	Carcia P F, McLean R S, Reilly M H, Nunes G 2003 Appl. Phys. Lett. 82 1117
[5]	Masuda S, Kitamura K, Okumura Y, Miyatake S, Tabata H, Kawai T 2003 J. Appl. Phys. 93 1624
[6]	Oh M S, Han J I, Lee K, Lee B H, Sung M M, Im S 2010 Electrochemical and Solid-State Letters 13 194
[7]	Avis C, Kim S H, Hur J H, Jang J, Milne W I 2009 Electrochemical and Solid-State Letters 12 93
[8]	Zhang Q, Saraf L V, Hua F 2007 Nanotechnology 18 195204
[9]	Sun J, Lu A X, Wang L P, Hu Y, Wan Q 2009 Nanotechnology 20 335204
[10]	Lim W, Douglas E A, Lee J, Jang J H, Craciun V 2009 J. Vac. Sci. Technol. B 27 2128
[11]	Paine D C, Yaglioglu B, Beiley Z, Lee S H 2008 Thin Solid Film. 516 5894
[12]	Wu H Z, Liang J, Jin G F, Lao Y F, Xu T L 2007 IEEE
[13]	Zhu X M, Wu H Z, Wang S J, Zhang Y Y, Cai C F, Si J X, Yuan Z J, Du X Y, Dong S R 2009 J. Semicond. 30 033001
[14]	Cheng S H, Ling Z Y, Huang F 2002 Acta Phys. Sin. 51 668 (in Chinese) [程珊华、宁兆元、黄峰 2002 物理学报 51 668]
[15]	Xu T N, Wu H Z, Zhang Y Y,Wang X,Zhu X M,Yuan Z J 2010 Acta Phys. Sin. 59 616 (in Chinese) [徐天宁、吴惠桢、张莹莹、王雄、朱夏明、原子健 2010 物理学报 59 616]
[16]	Chiang H Q, Wager J F, Hoffman R L, Jeong J, Keszler D A 2005 Appl. Phys. Lett. 86 013503
[17]	Jackson W B, Hoffman R L, Herman G S 2005 Appl. Phys. Lett. 87 193503
[18]	Grrn P, Hlzer P, Riedl T, Kowalsky W, Wang J, Weimann T, Hinze P, Kipp S 2007 Appl. Phys. Lett. 90 063502
[19]	Han S Y, Lee D H, Herman G S, Chang C H 2009 J. Display Technology 5 520
[20]	Chiang H Q, McFarlane B R, Hong D, Presley R E, Wager J F 2008 Journal of Non-Crystalline Solids 354 2826

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氧化锌锡薄膜晶体管的研究

Study of zinc tin oxide thin-film transistor

摘要

Abstract

作者及机构信息

1.
浙江大学物理学系,硅材料国家重点实验室,杭州 310027

Authors and contacts

1.
Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China

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氧化锌锡薄膜晶体管的研究

Study of zinc tin oxide thin-film transistor

摘要

Abstract

作者及机构信息

1. 浙江大学物理学系,硅材料国家重点实验室,杭州 310027

Authors and contacts

1. Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China

参考文献

施引文献

目录

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关于期刊

关于我们

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浙江大学物理学系,硅材料国家重点实验室,杭州 310027

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Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China