一种测量p-GaN载流子浓度的方法

周梅; 赵德刚

doi:10.7498/aps.60.037804

摘要

提出了一种测量p-GaN载流子浓度的方法,其主要思想是利用p-n+结构GaN探测器长波和短波量子效率的差值随反向偏压的变化关系,找到p-GaN层刚好完全耗尽时的偏压,从而求出p-GaN层载流子浓度.模拟计算表明,该方法能够准确测量出p-GaN层的载流子浓度,而且受表面复合、欧姆接触影响很小.进一步研究了实际测量中如何选择p-GaN层厚度,计算结果表明,p-GaN层的优化厚度值随着p-GaN层的浓度增加而减小.

关键词:

Abstract

A new method to measure the carrier concentration of p-GaN is proposed. The main idea is as follows: the difference between p-n+ structure GaN ultraviolet photodetector’s quantum efficiency at two different wavelengths varies remarkably with increasing reversed bias, and the most characteristic change occurs at a reversed voltage under which the p-GaN layer starts to be completely depleted, consequently the carrier concentration of p-GaN can be derived basing on this effect. The simulation results prove the validity of the idea even under the condition of high surface recombination velocity and bad ohmic contact. The thickness choice of p-GaN samples during the carrier concentration test experiment using this method is investigated. It is shown that the optimized thickness of p-GaN decreases with the increase of carrier concentration of p-GaN samples.

Keywords:

作者及机构信息

周梅²,
赵德刚¹

(1)中国科学院半导体研究所集成光电子学国家重点实验室,北京 100083; (2)中国农业大学理学院应用物理系,北京 100083

基金项目: 集成光电子学国家重点实验室开放课题(批准号:IOSKL-KF200914)和中央高校基本科研业务费专项资金(批准号:2009JS46, 2009-2-05)资助的课题.

Authors and contacts

Zhao De-Gang²,
Zhou Mei¹

(1)Department of Physics, China Agriculture University, Beijing 100083,China; (2)State key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

参考文献

[1]	Nakamura S 1998 Science 281 956
[2]	Amano H, Kito M, Hiramatsu K, Akasaki I 1989 Inst. Phys. Conf. Ser. 106 725
[3]	Amano H, Kito M, Hiramatsu K, Akasaki I 1989 Jpn. J. Appl. Phys. 28 L2112
[4]	Nakamura S, Mukai T, Senoh M, Iwasa N 1992 Jpn. J. Appl. Phys. 31 L139
[5]	Nakamura S, Iwasa N, Senoh M, Mukai T 1992 Jpn. J. Appl. Phys. 31 1258
[6]	Nakamura S, Senoh M, Mukai T 1994 Appl. Phys. Lett. 64 1687
[7]	Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y 1996 Jpn. J. Appl. Phys. 35 L74
[8]	Zhang S, Zhao D G, Liu Z S, Zhu J J, Zhang S M, Wang Y T, Duan L H, Liu W B, Jiang D S, Yang H 2009 Acta Phys. Sin. 58 7952 (in Chinese) [张爽、赵德刚、刘宗顺、朱建军、张书明、王玉田、段俐宏、刘文宝、江德生、杨辉 2009 物理学报 58 7952]
[9]	Luo Y, Guo W P, Shao J P, Hu H, Han Y J, Xue S, Wang L, Sun C Z, Hao Z P 2004 Acta Phys. Sin. 53 2720 (in Chinese) [罗毅、郭文平、邵嘉平、胡卉、韩彦军、薛松、汪莱、孙长征、郝智彪 2004 物理学报 53 2720]
[10]	Wang L J, Zhang S M, Zhu J H, Zhu J J, Zhao D G, Liu Z S, Jiang D S, Wang Y T, Yang H 2010 Chin. Phys. B 19 017307
[11]	Zhang L Q, Zhang S M, Jiang D S, Wang H, Zhu J J, Zhao D G, Liu Z S, Yang H 2009 Chin. Phys. B 18 5350
[12]	Zhou M, Zuo S H, Zhao D G 2007 Acta Phys. Sin. 56 5513 (in Chinese) [周梅、左淑华、赵德刚 2007 物理学报 56 5513]
[13]	Hu Z H, Liao X B, Diao H W, Xia C F, Xu L, Zeng X B, Hao H Y, Kong G L, 2005 Acta Phys. Sin. 54 2302 (in Chinese) [胡志华、廖显伯、刁宏伟、夏朝凤、许玲、曾湘波、郝会颖、孔光临 2005 物理学报 54 2302]
[14]	Zhao D G, Jiang D S, Zhu J J, Liu Z S, Zhang S M, Yang H 2008 Semicond. Sci. Technol. 23 095021
[15]	Zhang X, Kung P, Walker D, Biotrowski J, Rogalski A, Sazier A, Razeghi M 1995 Appl. Phys. Lett. 67 2028
[16]	Sze S M 1981 Physics of Semiconductor Devices, 2nd edn (New York: Wiley)
[17]	Zhao D G, Zhang S, Liu W B, Hao X P, Jiang D S, Zhu J J, Liu Z S, Wang H, Zhang S M, Yang H, Wei L, 2010 Chin. Phys. B 19 057802

施引文献

[1]	Nakamura S 1998 Science 281 956
[2]	Amano H, Kito M, Hiramatsu K, Akasaki I 1989 Inst. Phys. Conf. Ser. 106 725
[3]	Amano H, Kito M, Hiramatsu K, Akasaki I 1989 Jpn. J. Appl. Phys. 28 L2112
[4]	Nakamura S, Mukai T, Senoh M, Iwasa N 1992 Jpn. J. Appl. Phys. 31 L139
[5]	Nakamura S, Iwasa N, Senoh M, Mukai T 1992 Jpn. J. Appl. Phys. 31 1258
[6]	Nakamura S, Senoh M, Mukai T 1994 Appl. Phys. Lett. 64 1687
[7]	Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y 1996 Jpn. J. Appl. Phys. 35 L74
[8]	Zhang S, Zhao D G, Liu Z S, Zhu J J, Zhang S M, Wang Y T, Duan L H, Liu W B, Jiang D S, Yang H 2009 Acta Phys. Sin. 58 7952 (in Chinese) [张爽、赵德刚、刘宗顺、朱建军、张书明、王玉田、段俐宏、刘文宝、江德生、杨辉 2009 物理学报 58 7952]
[9]	Luo Y, Guo W P, Shao J P, Hu H, Han Y J, Xue S, Wang L, Sun C Z, Hao Z P 2004 Acta Phys. Sin. 53 2720 (in Chinese) [罗毅、郭文平、邵嘉平、胡卉、韩彦军、薛松、汪莱、孙长征、郝智彪 2004 物理学报 53 2720]
[10]	Wang L J, Zhang S M, Zhu J H, Zhu J J, Zhao D G, Liu Z S, Jiang D S, Wang Y T, Yang H 2010 Chin. Phys. B 19 017307
[11]	Zhang L Q, Zhang S M, Jiang D S, Wang H, Zhu J J, Zhao D G, Liu Z S, Yang H 2009 Chin. Phys. B 18 5350
[12]	Zhou M, Zuo S H, Zhao D G 2007 Acta Phys. Sin. 56 5513 (in Chinese) [周梅、左淑华、赵德刚 2007 物理学报 56 5513]
[13]	Hu Z H, Liao X B, Diao H W, Xia C F, Xu L, Zeng X B, Hao H Y, Kong G L, 2005 Acta Phys. Sin. 54 2302 (in Chinese) [胡志华、廖显伯、刁宏伟、夏朝凤、许玲、曾湘波、郝会颖、孔光临 2005 物理学报 54 2302]
[14]	Zhao D G, Jiang D S, Zhu J J, Liu Z S, Zhang S M, Yang H 2008 Semicond. Sci. Technol. 23 095021
[15]	Zhang X, Kung P, Walker D, Biotrowski J, Rogalski A, Sazier A, Razeghi M 1995 Appl. Phys. Lett. 67 2028
[16]	Sze S M 1981 Physics of Semiconductor Devices, 2nd edn (New York: Wiley)
[17]	Zhao D G, Zhang S, Liu W B, Hao X P, Jiang D S, Zhu J J, Liu Z S, Wang H, Zhang S M, Yang H, Wei L, 2010 Chin. Phys. B 19 057802

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