不同晶系应变Si状态密度研究

宋建军; 张鹤鸣; 戴显英; 宣荣喜; 胡辉勇; 王冠宇

doi:10.7498/aps.60.047106

摘要

应变Si技术是当前微电子领域研究发展重点,态密度是其材料的重要物理参量.本文基于应力相关KP理论,建立了(001),(101)和(111)晶面施加双轴应力形成的四方、单斜及三角晶系应变Si导带、价带态密度模型.结果表明,除单斜和三角晶系导带底态密度外,应力对其余各态密度均有显著影响.本文所得模型数据量化,可为应变Si材料物理的理解及其他物理参数模型的建立奠定重要理论基础.

关键词:

应变Si /
KP /
态密度

There has been aroused a lot of interest in the strained Si technology in the microelectronic field. Density of states (DOS) is an important physical parameter in strained Si materials. Based on the Kleinerts Variational perturbation (KP) theory related to stress, DOSs of electrons and holes near the bottom of conduction band and the top of valence band are obtained in tetragonal, rhombohedral and monoclinic strained Si grown from (001), (101) and (111) substrates respectively. It is found that their DOSs are obviously different from the ones of cubic unstrained Si, except DOSs of electrons near the bottom of conduction band in rhombohedral and monoclinic strained Si. The quantized model obtained can provide valuable references for understanding the strained Si material physics and developing the theoretical model of the other important physical parameters.

Keywords:

strained Si /
KP /
density of state

作者及机构信息

1.
西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安 710071

基金项目: 国家部委项目(批准号:51308040203,9140A08060407DZ0103,6139801),高校基本科研业务费项目(批准号:72105499, 72104289)资助的课题.

Authors and contacts

1.
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xian 710071, China

参考文献

[1]	Phama A T, Jungemann C, Meinerzhagen B 2008 Solid-State Electronics 52 1437
[2]	Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[3]	Chang S T, Liao S H, Lin C Y 2008 Thin Solid Films 517 356
[4]	Smith R A 1978 Semiconductors (London: Cambridge University Press) p116
[5]	Liu E K, Zhu B Sh, Luo J Sh 1994 Semiconductor Physics (Beijing: Defense Industry Press) p52 (in Chinese) [刘恩科、朱秉升、罗晋生 1994 半导体物理学(北京:国防工业出版社) 第367页] 〖6] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[6]	Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Journal of Semiconductors 29 1670 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 半导体学报 29 1670]
[7]	Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2010 Journal of Semiconductors 31 1670 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2010 半导体学报 31 1]
[8]	Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2009 Research & Progress of SSE 29 14 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2009 固体电子学研究与进展 29 14]
[9]	Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 物理学报 57 5918]
[10]	Song J J,Zhang H M,Hu H Y,Fu Q 2009 Science In China(G) 52 546
[11]	Song J J, Zhang H M, Xuan R X, Hu H Y, Dian X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese) [宋建军、张鹤鸣、宣荣喜、胡辉勇、戴显英 2009 物理学报 58 4958]
[12]	Song J J, Zhang H M, Hu H Y, Xuan R X, Dian X Y 2009 IEEE International Conference on Electron Devices and Solid-State Circuit Xian
[13]	Shi M, Wu G J 2008 Physics of Semiconductor Devices (Xian: Xian Jiaotong University Press) (in Chinese) p389 [施敏、伍国珏 2008 半导体器件物理(西安:西安交通大学出版社)第389页]

施引文献

[1]	Phama A T, Jungemann C, Meinerzhagen B 2008 Solid-State Electronics 52 1437
[2]	Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[3]	Chang S T, Liao S H, Lin C Y 2008 Thin Solid Films 517 356
[4]	Smith R A 1978 Semiconductors (London: Cambridge University Press) p116
[5]	Liu E K, Zhu B Sh, Luo J Sh 1994 Semiconductor Physics (Beijing: Defense Industry Press) p52 (in Chinese) [刘恩科、朱秉升、罗晋生 1994 半导体物理学(北京:国防工业出版社) 第367页] 〖6] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[6]	Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Journal of Semiconductors 29 1670 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 半导体学报 29 1670]
[7]	Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2010 Journal of Semiconductors 31 1670 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2010 半导体学报 31 1]
[8]	Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2009 Research & Progress of SSE 29 14 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2009 固体电子学研究与进展 29 14]
[9]	Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 物理学报 57 5918]
[10]	Song J J,Zhang H M,Hu H Y,Fu Q 2009 Science In China(G) 52 546
[11]	Song J J, Zhang H M, Xuan R X, Hu H Y, Dian X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese) [宋建军、张鹤鸣、宣荣喜、胡辉勇、戴显英 2009 物理学报 58 4958]
[12]	Song J J, Zhang H M, Hu H Y, Xuan R X, Dian X Y 2009 IEEE International Conference on Electron Devices and Solid-State Circuit Xian
[13]	Shi M, Wu G J 2008 Physics of Semiconductor Devices (Xian: Xian Jiaotong University Press) (in Chinese) p389 [施敏、伍国珏 2008 半导体器件物理(西安:西安交通大学出版社)第389页]

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