循环氧化/退火制备GeOI薄膜材料及其性质研究

胡美娇; 李成; 徐剑芳; 赖虹凯; 陈松岩

doi:10.7498/aps.60.078102

摘要

采用超高真空化学气相淀积系统在SOI(绝缘体上硅)衬底上生长了Si0.82Ge0.18外延层,通过循环氧化/退火工艺,制备出Ge组分从0.24到1的绝缘体上锗硅(SGOI)材料.采用高分辨透射电镜、拉曼散射光谱和光致发光谱表征了其结构及光学性质,对氧化过程中SiGe层中的Ge组分和应变的演变进行了分析.最后制备出11 nm厚的绝缘体上Ge材料(GeOI),具有完整的晶格结构和平整的界面.室温下观测到绝缘体上Ge直接带跃迁光致发光,发光峰值位于1540 nm,发光

关键词:

GeOI /
氧化 /
退火 /
光致发光谱

Abstract

Si0.82Ge0.18/SOI prepared by epitaxial growth of SiGe layer on SOI wafer in the ultra-high vacuum chemical vapor deposition is used to fabricate the SiGe on insulator (SGOI) substrate (0.24≤xGe≤1) by the cyclic oxidation and annealing processes. The structure and the optical properties of the SGOI with various Ge content are studied by employing HRTEM, Raman spectroscopy, and photoluminescence (PL) spectroscopy. The variations of Ge component and strain in the oxidation process are analyzed. High crystal quality Ge on insulator (GeOI), with a thickness of 11 nm, is obtained with a flat Ge/SiO2 interface. The direct band transition photoluminescence of the GeOI is observed at room temperature. The photoluminescence peak from GeOI is located at 1540 nm, and the PL intensity increases linearly with exciting power increasing. It is indicated that the formed GOI material has a high crystallization quality and is suitable for the applications in Ge optoelectronic and microelectronic devices.

Keywords:

作者及机构信息

1.
厦门大学物理系,半导体光子学研究中心,厦门 361005

基金项目: 国家重点基础研究发展计划(批准号:2007CB613404)和国家自然科学基金(批准号:61036003和60837001)资助的课题.

Authors and contacts

1.
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China

参考文献

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[24]	Li C, Chen Y H, Zhou Z W, Lai H K, Chen S Y 2009 Appl. Phys. Lett. 95 251102

施引文献

[1]	Tracy C J, Fejes P, Theodore N D, Maniar P, Johnson E, Lamm A J, Paler A M, Malik I J, Ong P 2004 J. Electron. Mater. 33 886
[2]	Celler G K, Cristoloveanu S 2003 J. Appl. Phys. 93 4955
[3]	Lee M L, Fitzgerald E A 2003 Appl. Phys. Lett. 83 4202
[4]	Mooney P M, Chu J O 2000 Annu. Rev. Mater. Sci. 30 335
[5]	Ma L, Gao Y 2009 Acta Phys.Sin. 58 529 (in Chinese)[马丽、高勇 2009 物理学报 58 529]
[6]	Chui C O, Ramanathan S, Triplett B B, McIntyre P C, Saraswat K C 2002 IEEE Electron Device Lett. 23 473
[7]	Bai W P, Lu N, Liu J, Ramirez A, Kwong D L, Wristers D, Ritenour A, Lee L, Antoniadis D 2003 Symposium on VLSI Technology:Digest of Technical Papers Kyoto, Japan, June 10—12, 2003 p121
[8]	Shang H, Okorn-Schimdt H, Ott J, Kozlowski P, Steen S, Jones E C, Wong H S P, Hanesch W 2003 IEEE Electron Device Lett. 24 242
[9]	Liu Y C, Deal M D, Plummer J D 2004 Appl. Phys. Lett. 84 2563
[10]	Gao X G, Liu C, Li J P, Zeng Y P, Li J M 2005 Microlectronics 35 76 (in chinese) [高兴国、刘超、李建平、曾一平、李晋闽 2005 微电子学35 76]
[11]	Tang Y S, Zhang J P, Hemment P L F, Sealy B J 1990 J. Appl. Phys. 67 7151
[12]	Sugiyama N, Mizuno T, Suzuki M, Takagi S 2001 Jpn. J. Appl. Phys. 40 2875
[13]	Cheng Z, Taraschi G, Currie M T, Leitz C W, Lee M L, Pitera A, Langdo T A, Hoyt J L, Antoniadis D A, Fitzgerald E A 2001 J. Electron. Mater. 30 37
[14]	Deguet C, Sanchez L, Akatsu T, Allibert F, Dechamp J, Madeira F, Mazen F, Tauzin A, Loup V, Richtarch C, Mercier D, Signamarcheix T, Letertre F, Depuydt B, Kernevez N 2006 Electron. Lett. 42 415
[15]	Tezuka T, Sugiyama N, Takagi S 2001 Appl. Phys. Lett. 79 1798
[16]	Di Z F, Zhang M, Liu W L, Luo S H, Song Z T, Lin C L, Huang A P, Chu P K 2005 J. Vac. Sci. Technol. B 23 1637
[17]	Zhang Y, Cai K H, Li C, Chen S Y, Lai H K, Kang J Y 2009 J. Electrochem. Soc. 156 115
[18]	Eugéne J, LeGoues F K, Kesan V P, Lyer S S, d'Heurle F M 1991 Appl. Phys. Lett. 59 78
[19]	Tezuka T, Sugiyama N, Mizuno T, Suzuki M, Takagi S 2001 Jpn. J. Appl. Phys. 140 2866
[20]	Shimura T, Shimizu M, Horiuchi S, Watanabe H, Yasutake K, Umeno M 2006 Appl. Phys. Lett. 89 111923
[21]	Di Z F, Zhang M, Liu W L, Zhu M, Lin C L, Chu P K 2005 Mater. Sci. Eng. B 124-125 153
[22]	Groenen J, Carles R, Christiansen S, Albrecht M, Dorsch W, Strunk H P, Wawra H, Wagner G 1997 Appl. Phys. Lett. 71 3856
[23]	Sheng H, Jiang Z M, Lu F, Huang D M 2004 Silicon-Germanium Superlattices and Low Dimensional Quantum Structures (Shanghai: Shanghai Science and Technology Press) pp54—55 (in Chinese) [盛箎、蒋最敏、陆昉、黄大鸣 2004 硅锗超晶格及低维量子结构 (上海:上海科学技术出版社) 第54—55页]
[24]	Li C, Chen Y H, Zhou Z W, Lai H K, Chen S Y 2009 Appl. Phys. Lett. 95 251102

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