1 eV吸收带边GaInAs/GaNAs超晶格太阳能电池的阱层设计

王海啸; 郑新和; 吴渊渊; 甘兴源; 王乃明; 杨辉

doi:10.7498/aps.62.218801

摘要

使用In, N分离的GaInAs/GaNAs超晶格作为有源区是实现高质量1eV带隙 GaInNAs基太阳能电池的重要方案之一. 为在实验上生长出高质量相应吸收带边的超晶格结构, 本文采用计算超晶格电子态常用的Kronig-Penney模型比较了不同阱层材料选择下, 吸收带边为1 eV的GaInAs/GaNAs超晶格相关参数的对应关系以及超晶格应变状态. 结果表明: GaNAs与GaInAs作为超晶格阱层材料在实现1 eV的吸收带边时具有不同的考虑和要求; 在固定1 eV的吸收带边时, GaNAs材料作为阱层可获得较好的超晶格应变补偿, 将有利于生长高质量且充分吸收的太阳能电池有源区.

关键词:

Abstract

The GaInAs/GaNAs super-lattice with a feature of space separation of In and N constituents as an active region, is one of the most important ways to achieve 1 eV GaInNAs-based solar cells. To experimentally realize the high-quality super-lattice structure with the required band-gap, Kronig-Penney model is used to obtain the barrier thickness dependence on the well thickness and its composition. Meanwhile, the strain state of GaInAs/GaNAs SLs with various well choices is also discussed. Results show that when both the GaNAs and GaInAs act as the well layers the super-lattice can achieve 1 eV band-gap, and when the GaN0.04As0.96 is considered to act as the well layer, the entire GaInAs/GaNAs SLs have smaller strain accumulations as compared with the case of Ga0.7In0.3As as the well layer in the super-lattice structure.

Keywords:

作者及机构信息

1.
中国科学院苏州纳米技术与纳米仿生研究所, 纳米器件与应用重点实验室, 苏州 215123;

2.
中国科学院大学, 北京 100080

基金项目: 国家自然科学基金(批准号: 61274134)和苏州市国际合作项目(批准号: SH201215)资助的课题.

Authors and contacts

1.
Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;

2.
University of Chinese Academy of Sciences, Beijing 100080, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61274134), and the International Cooperation Program of Suzhou, China (Grant No. SH201215)

参考文献

[1]	Kondow M, Uomi K, Niwa A, Kitatani T, Watahiki S, Yazawa Y 1996 Jpn. J. Appl. Phys. 35 1273
[2]	Kurtz S R, Myers D, Olson J M 1997 Proceedings of the 26th IEEE Photovoltaic Specialists Conference, Anaheim, 29 Sep–3 Oct 1997, p 875
[3]	Zhao J, Zeng Y P 2011 Physics 4 233 (in Chinese) [赵杰, 曾一平 2011 物理 4 233]
[4]	Kong X, Trampert A, Tournie E, Ploog K H 2005 Appl. Phys. Lett. 87 171901
[5]	Oshima R, Huang J, Miyashita N, Matsubara K, Okada Y, Ponce F 2011 Appl. Phys. Lett. 99 191907
[6]	Miyamoto T, Sato S, Pan Z, Schlenker D, Koyama F, Iga K 1998 J. Cryst Growth. 195 421
[7]	Hong Y G, Tu C W, Ahrenkiel R K 2001 J Cryst Growth. 227–228 536
[8]	Hong Y G, Egorov A Y, Tu C W 2002 J. Vac. Sci. Technol B 20 1163
[9]	Wu P H, Su Y K, Yen C T, Hong H F, Chu K Y, Chen Y R 2007 Semicond Sci. Tech. 22 549
[10]	Wu P H, Su Y K, Chen I L, Chiou C H, Hsu J T, Chen W R 2006 Jpn. J. Appl. Phys. 45 L647
[11]	Wu P H, Su Y K, Chen I L, Chiou C H, Hsu J T, Chen W R 2007 Physica Status Solidi (c) 4 2854
[12]	Wang H X, Zheng X H, Wen Y, Wu Y Y, Gan X Y, Wang N M, Yang H 2013 Scientia Sinica Pysica, Mechanica & Astronomica 43 930 (in Chinese) [王海啸, 郑新和, 文瑜, 吴渊渊, 甘兴源, 王乃明, 杨辉 2013 中国科学: 物理学力学天文学 43 930]
[13]	Li L, Zhao D G, Jiang D S, Liu Z S, Chen P, Wu L L, Le L C, Wang H, Yang H 2013 Chin. Phys. B 22 068802
[14]	Esaki L, Tsu R 1970 IBM Journal of Research and Development. 14 61
[15]	Lu W, Xue M, Wei Y, He L 2011 Acta Phys. Sin. 60 87807 (in Chinese) [芦伟, 徐明, 魏屹, 何林 2011 物理学报 60 87807]
[16]	Tisch U, Finkman E, Salzman J 2002 Appl. Phys. Lett. 81 463
[17]	Niki S, Lin C L, Chang W S C, Wieder H H 1989 Appl. Phys. Lett. 55 1339

施引文献

[1]	Kondow M, Uomi K, Niwa A, Kitatani T, Watahiki S, Yazawa Y 1996 Jpn. J. Appl. Phys. 35 1273
[2]	Kurtz S R, Myers D, Olson J M 1997 Proceedings of the 26th IEEE Photovoltaic Specialists Conference, Anaheim, 29 Sep–3 Oct 1997, p 875
[3]	Zhao J, Zeng Y P 2011 Physics 4 233 (in Chinese) [赵杰, 曾一平 2011 物理 4 233]
[4]	Kong X, Trampert A, Tournie E, Ploog K H 2005 Appl. Phys. Lett. 87 171901
[5]	Oshima R, Huang J, Miyashita N, Matsubara K, Okada Y, Ponce F 2011 Appl. Phys. Lett. 99 191907
[6]	Miyamoto T, Sato S, Pan Z, Schlenker D, Koyama F, Iga K 1998 J. Cryst Growth. 195 421
[7]	Hong Y G, Tu C W, Ahrenkiel R K 2001 J Cryst Growth. 227–228 536
[8]	Hong Y G, Egorov A Y, Tu C W 2002 J. Vac. Sci. Technol B 20 1163
[9]	Wu P H, Su Y K, Yen C T, Hong H F, Chu K Y, Chen Y R 2007 Semicond Sci. Tech. 22 549
[10]	Wu P H, Su Y K, Chen I L, Chiou C H, Hsu J T, Chen W R 2006 Jpn. J. Appl. Phys. 45 L647
[11]	Wu P H, Su Y K, Chen I L, Chiou C H, Hsu J T, Chen W R 2007 Physica Status Solidi (c) 4 2854
[12]	Wang H X, Zheng X H, Wen Y, Wu Y Y, Gan X Y, Wang N M, Yang H 2013 Scientia Sinica Pysica, Mechanica & Astronomica 43 930 (in Chinese) [王海啸, 郑新和, 文瑜, 吴渊渊, 甘兴源, 王乃明, 杨辉 2013 中国科学: 物理学力学天文学 43 930]
[13]	Li L, Zhao D G, Jiang D S, Liu Z S, Chen P, Wu L L, Le L C, Wang H, Yang H 2013 Chin. Phys. B 22 068802
[14]	Esaki L, Tsu R 1970 IBM Journal of Research and Development. 14 61
[15]	Lu W, Xue M, Wei Y, He L 2011 Acta Phys. Sin. 60 87807 (in Chinese) [芦伟, 徐明, 魏屹, 何林 2011 物理学报 60 87807]
[16]	Tisch U, Finkman E, Salzman J 2002 Appl. Phys. Lett. 81 463
[17]	Niki S, Lin C L, Chang W S C, Wieder H H 1989 Appl. Phys. Lett. 55 1339

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