单轴应变SiNMOSFET热载流子栅电流模型

吕懿; 张鹤鸣; 胡辉勇; 杨晋勇

doi:10.7498/aps.63.197103

摘要

热载流子效应产生的栅电流是影响器件功耗及可靠性的重要因素之一，本文基于热载流子形成的物理过程，建立了单轴应变硅NMOSFET热载流子栅电流模型，并对热载流子栅电流与应力强度、沟道掺杂浓度、栅源电压、漏源电压等的关系，以及TDDB（经时击穿）寿命与栅源电压的关系进行了分析研究. 结果表明，与体硅器件相比，单轴应变硅MOS器件不仅具有较小的热载流子栅电流，而且可靠性也获得提高. 同时模型仿真结果与单轴应变硅NMOSFET的实验结果符合较好，验证了该模型的可行性.

关键词:

Abstract

Hot carrier gate current is one of the factors that influence the power and reliability of metal-oxide-semiconductor field effect transistor (MOSFET). Based on the physical process of generation of the hot carrier effect, a model of hot carrier gate current for uniaxially strained Si NMOSFET is developed. With that model, the simulation results of hot carrier gate current against stress intensity, gate-source bias, channel doping concentration, and drain-source bias are obtained and analyzed. The relationship between life time of time-dependent dielectric break down (TDDB) and gate-source bias is simulated and analyzed. Results show that the uniaxially strained Si MOSFET not only has smaller hot carrier gate current, but also has more stable reliability as compared with the strainless bulk device. Meanwhile, the simulation results match the experimental results very well, which validates the accuracy of the model.

Keywords:

作者及机构信息

1.
西安电子科技大学微电子学院, 宽禁带半导体材料与器件重点实验室, 西安 710071;

2.
北京精密机电控制设备研究所, 北京 100076

基金项目: 教育部博士点基金（批准号：JY0300122503）和中央高校基本业务费（批准号：K5051225014，K5051225004）资助的课题.

Authors and contacts

1.
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China;

2.
Beijing Research Institute of Precise Mechatronic Controls, Beijing, 100076, China

Funds: Project supported by the Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503), and the Fundamental Research Funds for the Central Universities of China (Grant Nos. K5051225014, K5051225004).

参考文献

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施引文献

[1]	Zhou C Y, Zhang H M, Hu H Y, Zhuang Y Q, L Y, Wang B, Li H C 2013 Acta Phys. Sin. 62 237103(in Chinese) [周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 吕懿, 王斌, 李妤晨 2013 物理学报 62 237103]
[2]	Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[3]	Nicoleta W, Harald R, Mahadi-ul H 2011 Solid-State Electronics 57 60
[4]	Olayiwola A, Sarah O, Anthony O’Neill 2010 Solid-State Electronics 54 634
[5]	Zhou C Y, Zhang H M, Hu H Y, Zhuang Y Q, Lv Y, Wang B, Wang G Y 2014 Acta Phys. Sin. 63 017101(in Chinese) [周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 吕懿, 王斌, 王冠宇 2014 物理学报 63 017101]
[6]	Kuang Q W, Liu H X, Wang S L, Qin S S, Wang Z L 2011 Chin. Phys. B 20 127101
[7]	Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li H C, Lv Y 2013 Acta Phys. Sin. 62 057103(in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 物理学报 62 057103]
[8]	Ting-Kuo Kang 2012 IEEE Electron Device Letters 33 770
[9]	Wu H Y, Zhang H M, Song J J, Hu H Y 2011 Acta Phys. Sin. 60 097302(in Chinese) [吴华英, 张鹤鸣, 宋建军, 胡辉勇 2011 物理学报 60 097302]
[10]	Min B W, Zia O, Celik M, Widenhofer R, Kang L, Song S, Gonzales S, Mendicino M 2001 IEEE IEDM 01 873
[11]	Liu H X, Zheng X F, Hao Y 2002 Acta Phys. Sin. 51 0163(in Chinese) [刘红侠, 郑雪峰, 郝跃 2002 物理学报 51 0163]
[12]	Tam S, Ko P K, Hu C M 1984 IEEE Trans. on Electron Devices 31 1116
[13]	El-Hennawy A, El-Said M H, Borel J, Kamarinos G 1987 Solid-Srate Electron 30 519
[14]	Ning T H 1979 IEEE Trans. Electron Devices 26 4
[15]	Weavera B D, Jackson E M, Summers G P 2000 J. Appl. Phys. 88 6951
[16]	Toshifumi I, Toshinori N, Eiji T Norio H, Tsutomu T, Naoharu S, Shin-ichi T 2008 IEEE Trans. on Electron Devices 55 3159

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