单根In掺杂ZnO纳米带场效应管的电学性质

唐欣月; 高红; 潘思明; 孙鉴波; 姚秀伟; 张喜田

doi:10.7498/aps.63.197302

摘要

采用化学气相沉积法合成了In掺杂ZnO纳米带，并对其进行了X射线衍射、光致发光及透射电镜表征. 基于单根纳米带，采用廉价微栅模板法制备了背栅场效应管，利用半导体参数测试仪测量了场效应管的输出（Ids-Vds）和转移（Ids-Vgs）特性，得出相关电学参数，其中迁移率值为622 cm2·V-1·s-1，该值明显优于包括ZnO在内的大多数材料；讨论了迁移率提高的可能原因.

关键词:

ZnO /
纳米带 /
场效应管 /
迁移率

Back-gate field effect transistors based on In-doped ZnO individual nanobelts have been fabricated using the low-cost microgrid template method. The output (Ids-Vds) and transfer (Ids-Vgs) characteristic curves for the transistors are measured, and the mobility is derived to be 622 cm2· V-1· s-1. This value is obviously superior to those for most of materials including pure ZnO in the literature, and possible influence factors have also been discussed.

Keywords:

作者及机构信息

1.
光电带隙材料省部共建教育部重点实验室, 哈尔滨师范大学物理与电子工程学院, 哈尔滨 150025

基金项目: 国家自然科学基金（批准号：11074060，51172058）、黑龙江省教育厅科学技术重点研究项目（批准号：12521z012）和黑龙江省研究生创新科研项目（2013）资助的课题.

Authors and contacts

1.
Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11074060, 51172058), the Key Project of the Science Technology and Research of Education Bureau, Heilongjiang Province, China (Grant No. 12521z012), and the Graduate Students' Scientific Research Innovation Project of Heilongjiang Province, China (2013).

参考文献

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[31]	Yang H, Yang C, Kim S H, Jang M, Park C E 2010 ACS Appl. Mat. Interfaces 2 391

施引文献

[1]	Chen K J, Hung F Y, Chang S J, Hu Z S 2009 Appl. Surf. Sci. 255 6308
[2]	Huang Y H, Zhang Y, Gu Y S, Bai X D, Qi J J, Liao Q L, Liu J 2007 J. Phys. Chem. C 111 9039
[3]	Phillips J M, Cava R J, Thomas G A, Carter S A, Kwo J, Siegrist T, Krajewski J J, Marshall J H, Peck W F, Jr., Rapkine D H 1995 Appl. Phys. Lett. 67 2246
[4]	Kim K J, Park Y R 2001 Appl. Phys. Lett. 78 475
[5]	Su J, Li H F, Huang Y H, Xing X J, Zhao J, Zhang Y 2011 Nanoscale 3 2182
[6]	Ahmad M, Zhao J, Iqbal J, Miao W, Xie L, Mo R, Zhu J 2009 J. Phys. D: Appl. Phys. 42 165406
[7]	Li L M, Li C C, Zhang J, Du Z F, Zou B S, Yu H C, Wang Y G, Wang T H 2007 Nanotechnology 18 225504
[8]	Maeng J, Heo S, Jo G, Choe M, Kim S, Hwang H, Lee Takhee 2009 Nanotechnology 20 095203
[9]	Cha S N, Jang J E, Choi Y, Amaratunga G A J, Ho G W, Welland M E, Hasko D G, Kang D J, Kim J M 2006 Appl. Phys. Lett. 89 263102
[10]	Cheng Y, Xiong P, Fields L, Zheng J P, Yang R S, Wang Z L 2006 Appl. Phys. Lett. 89 093114
[11]	Kim D H, Cho N G, Kim H G, Cho W Y 2007 J. Electrochem. Soc. 154 H939
[12]	De D, Manongdo J, See S, Zhang V, Guloy A, Peng H 2013 Nanotechnology 24 025202
[13]	Li M, Zhang H Y, Guo C X, Xu J B, Fu X J 2009 Chin. Phys. B 18 1594
[14]	Jiang W, Gao H, Xu L L 2012 Chin. Phys. Lett. 29 037102
[15]	Lang Y, Gao H, Jiang W, Xu L L, Hou H T 2012 Sens. Actuators A 174 43
[16]	Li M J, Gao H, Li J L, Wen J, Li K, Zhang W G 2013 Acta Phys. Sin. 62 187302(in Chinese) [李铭杰, 高红, 李江禄, 温静, 李凯, 张伟光 2013 物理学报 62 187302]
[17]	Yuan Z, Gao H, Xu LL, Chen T T, Lang Y 2012 Acta Phys. Sin. 61 057201(in Chinese) [袁泽, 高红, 徐玲玲, 陈婷婷, 郎颖 2012 物理学报 61 057201]
[18]	Zhou J, Gu Y D, Hu Y F, Mai W J, Yeh P H, Bao G, Sood A K, Polla D L, Wang Z L 2009 Appl. Phys. Lett. 94 191103
[19]	Wan Q, Huang J, Lu A, Wang T H 2008 Appl. Phys. Lett. 93 103109
[20]	Jie J S, Wang G Z, Han X H, Yu Q X, Liao Y, Li G P, Hou J G 2004 Chem. Phys. Lett. 387 466
[21]	Jabeen M, Iqbal M A, Kumar R V, Ahmed M, Javed M T 2014 Chin. Phys. B 23 018504
[22]	Chen Y T, Cheng C L, Chen Y F 2008 Nanotechnology. 19 445707
[23]	Park W I, Kim J S, Yi G C, Bae M H, Lee H J 2004 Appl. Phys. Lett. 85 5052
[24]	Ma R M, Dai L, Huo H B, Yang W Q, Qin G G 2006 Appl. Phys. Lett. 89 203120
[25]	Fan Z Y, Wang D W, Chang P C, Tseng W Y, Lu J G 2004 Appl. Phys. Lett. 85 5923
[26]	Hsu C L, Tsai T Y 2011 J. Electrochem. Soc. 158 K20
[27]	Wu Y, Girgis E, Ström V, Voit W, Belova L, Rao K V 2011 Phys. Status Solidi A 208 206
[28]	Li S S, Zhang Z, Huang J Z, Feng X P, Liu R X 2011 Acta Phys. Sin. 60 097405(in Chinese) [李世帅, 张仲, 黄金昭, 冯秀鹏, 刘如喜 2011 物理学报 60 097405]
[29]	Shinde S S, Shinde P S, Bhosale C H, Rajpure K Y 2008 J. D: Appl. Phys. 41 105109
[30]	Fritz S E, Kelley T W, Frisbie C D 2005 J. Phys. Chem. B 109 10574
[31]	Yang H, Yang C, Kim S H, Jang M, Park C E 2010 ACS Appl. Mat. Interfaces 2 391

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