嵌入Ag纳米颗粒层的DNA忆阻器

王媛; 董瑞新; 闫循领

doi:10.7498/aps.64.048402

摘要

构建了具有“Al/DNA-CTMAB/Ag NPs/DNA-CTMAB/ITO”结构的有机忆阻器件, 并对其电流-电压 (I-V)曲线进行测量. 结果表明, 嵌入Ag纳米颗粒层, 不仅可以增强器件的导电性, 而且忆阻特性也显著提高. 当颗粒粒径在15–20 nm范围时, 开-关电流比ION/IOFF能够达到103. 器件的I-V特性受扫描电压幅值VA的影响, 随着VA的增大, 高阻态的电流变化较小, 而低阻态的电流明显增大, 开(或关)电压VSET (VRESET)和ION/IOFF增加. 实验还发现, 器件高低阻状态的相互转换取决于外加电场的方向, 说明该忆阻器具有极性.

关键词:

Abstract

Two-terminal electrical bistable device is fabricated with structure “Al/deoxyribonucleic acid-cetyltrimethylam- monium bromide/silver nanoparticles/deoxyribonucleic acid-cetyltrimethylammonium bromide/indium tin oxide”, and I-V curves are measured. The results show that the conductivity and the memristive characteristics are significantly improved by the embedding Ag nanoparticles layer. The optimal particle diameters are in a range of 15 - 20 nm, and the maximum on/off current ratio can reach 103. It is also found that I-V characteristic of the device depends on the sweeping voltage amplitude VA. As VA increases, switching voltages (VSET, VRESET) and the on/off current ratio ION/IOFF increase. Furthermore, the transition between high-and low-resistance-state depends on the direction of the applied electric field, which shows that the device possesses polarity.

Keywords:

作者及机构信息

1.
聊城大学物理科学与信息工程学院, 山东省光通信和科学技术重点实验室, 聊城 252059

基金项目: 国家自然科学基金(批准号: 11375081)和山东省自然科学基金(批准号: ZR2012FM026, ZR2012FL20)资助的课题.

Authors and contacts

1.
Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11375081) and the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR2012FM026, ZR2012FL20).

参考文献

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[3]	Zhang T, Yin J, Zhao G F, Zhang W F, Xia Y D, Liu Z G 2014 Chin. Phys. B 23 087304
[4]	Chen J C, Liu C L, Sun Y S, Tung S H, Chen W C 2012 Soft Matter 8 526
[5]	Ouyang J, Chu C W, Tseng R J H, Prakash A, Yang Y 2005 Proc. IEEE 93 1287
[6]	Rong J L, Chen Y H, Zhou J, Zhang X, Wang L, Cao J 2013 Acta Phys. Sin. 62 228502 (in Chinese) [容佳玲, 陈赟汉, 周洁, 张雪, 王立, 曹进 2013 物理学报 62 228502]
[7]	Chen J, Ma D 2005 Appl. Phys. Lett. 87 023505
[8]	Lauters M, McCarthy B, Sarid D, Jabbour G E 2006 Appl. Phys. Lett. 89 013507
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施引文献

[1]	Chen R, Zhou L W, Wang J Y, Chen C J, Shao X L, Jiang H, Zhang K L, L L R, Zhao J S 2014 Acta Phys. Sin. 63 067202 (in Chinese) [陈然, 周立伟, 王建云, 陈长军, 邵兴隆, 蒋浩, 张楷亮, 吕联荣, 赵金石 2014 物理学报 63 067202]
[2]	Wei X Y, Hu M, Zhang K L, Wang F, Liu K 2013 Acta Phys. Sin. 62 047201 (in Chinese) [韦晓莹, 胡明, 张楷亮, 王芳, 刘凯 2013 物理学报 62 047201]
[3]	Zhang T, Yin J, Zhao G F, Zhang W F, Xia Y D, Liu Z G 2014 Chin. Phys. B 23 087304
[4]	Chen J C, Liu C L, Sun Y S, Tung S H, Chen W C 2012 Soft Matter 8 526
[5]	Ouyang J, Chu C W, Tseng R J H, Prakash A, Yang Y 2005 Proc. IEEE 93 1287
[6]	Rong J L, Chen Y H, Zhou J, Zhang X, Wang L, Cao J 2013 Acta Phys. Sin. 62 228502 (in Chinese) [容佳玲, 陈赟汉, 周洁, 张雪, 王立, 曹进 2013 物理学报 62 228502]
[7]	Chen J, Ma D 2005 Appl. Phys. Lett. 87 023505
[8]	Lauters M, McCarthy B, Sarid D, Jabbour G E 2006 Appl. Phys. Lett. 89 013507
[9]	Ouyang J, Chu C W, Szmanda C R, Ma L, Yang Y 2004 Nat. Mater. 3 918
[10]	Prakash A, Ouyang J, Lin J L, Yang Y 2006 J. Appl. Phys. 100 054309
[11]	Tondelier D, Lmimouni K, Vuillaume D, Fery C, Haas G 2004 Appl. Phys. Lett. 85 5763
[12]	Ma L P, Liu J, Yang Y 2002 Appl. Phys. Lett. 80 2997
[13]	Reddy V S, Karak S, Dhar A 2009 Appl. Phys. Lett. 94 173304
[14]	Bozano L D, Kean B W, Beinhoff M, Carter K R, Rice P M, Scott J C 2005 Adv. Funct. Mater. 15 1933
[15]	Jin Z W, Liu G, Wang J Z 2013 AIP Adv. 3 052113
[16]	Liu G, Jin Z W, Zhang Z G, Wang J Z 2014 Appl. Phys. Lett. 104 023303
[17]	Ouyang J 2013 Org. Electron. 14 665
[18]	Tian X Z, Yang S Z, Zeng M, Wang L F, Wei J K, Xu Z, Wang W L, Bai X D 2014 Adv. Mater. 26 3649

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