InGaN/GaN多量子阱结构发光二极管发光机理转变的低频电流噪声表征

王党会; 许天旱; 王荣; 雒设计; 姚婷珍

doi:10.7498/aps.64.050701

摘要

本文对InGaN/GaN多量子阱结构发光二极管开启后的电流噪声进行了测试, 结合低频电流噪声的特点和载流子之间的复合机理, 研究了低频电流噪声功率谱密度与发光二极管发光转变机理之间的关系. 结论表明, 当电流从0.1 mA到10 mA逐渐增大的过程中, InGaN/GaN发光二极管的电流噪声行为从产生-复合噪声逐渐接近于低频1/f噪声, 载流子的复合机理从非辐射复合过渡为电子与空穴之间载流子数的辐射复合, 并具有标准1/f噪声的趋势, 此时多量子阱中的电子和空穴之间的复合趋向于稳定. 本文的结论提供了一种表征InGaN/GaN多量子阱发光二极管发光机理转变的有效方法, 为进一步研究发光二极管中载流子的复合机理、优化和设计发光二极管、提高其发光量子效率提供理论依据.

关键词:

Abstract

In this paper, we measure the emission transition mechanisms in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LED) using low-frequency current noise from 0.1 to 10 mA. According to the characteristics of the low-frequency current noise and the emission mechanisms of InGaN/GaN LEDs, we study the relationships between low-frequency current noise and current flows through the LEDs. Conclusions indicate that the low-frequency current noise is increased with the increasing current from 0.1 to 10 mA. With a lower current (I10 mA) it is the 1/f noise that dominates in LEDs, so there exists an emission transition mechanism in InGaN/GaN MQW LEDs between 0.1 and 10 mA, showing that the mechanism of the carrier recombination changes from non-radiative recombination to a stable fluctuation of carrier numbers. Conclusions of this paper provide an effective method to characterize the emission transition mechanisms, optimize the design of LED so as to improve the quantum efficiency for InGaN/GaN MQW LEDs.

Keywords:

作者及机构信息

1.
西安石油大学材料科学与工程学院, 西安 710065

基金项目: 西安石油大学博士科研启动基金(批准号: Z14086)和陕西省教育厅基金(批准号:2013JK0894)资助的课题.

Authors and contacts

1.
School of Materials Science & Engineering of Xi'an ShiYou University, Xi'An 710065, China

Funds: Project supported by Youth Science and Technology Innovation Fund of Xi'an Shiyou University (Grant No. Z14086), and the Scientific Research Program Funded by Shaanxi Provicial Education Department (Grant No. 2013JK0894).

参考文献

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[2]	Amano H, Sawaki N, Akasaki I, Toyoda Y 1986 Appl. Phys. Lett. 48 353
[3]	Nakamura S, Mukai T 1992 Jpn J. Appl. Phys. 31 1457
[4]	Nakamura S, Mukai T, Senoh M 1994 Appl. Phys. Lett. 64 1687
[5]	Nakamura S, Senoh M, Mukai T 1993 Jpn. J. Appl. Phys. 32 L8
[6]	Chang M H, Das D, Varde P V, Pecht M 2012 Microelectron. Reliab. 52 5762
[7]	Katsushi Akita, Takashi Kyono, Yusuke Yoshizumi, Hiroyuki Kitabayashi, Koji Katayama 2007 J. Appl. Phys. 101 033104
[8]	Yen-Kuang Kuo, Tsun-Hsin Wang, Jih-Yuan Chang, Miao-Chan Tsai 2011 Appl. Phys. Lett. 99 091107
[9]	Cai J X, Sun H Q, Zheng H, Zhang P J, Guo Z Y 2014 Chin. Phys. B 23 058502
[10]	Hu J, Du L, Zhuang Y Q, Bao J l, Zhou J 2006 Acta Phys.Sin. 55 1384 (in Chinese) [胡瑾, 杜磊, 庄奕琪, 包军林, 周江 2006 物理学报 55 1384]
[11]	Liu Y A, Zhuang Y Q, Du L, Su Y H 2013 Acta Phys. Sin. 62 140703 (in Chinese) [刘宇安, 庄奕琪, 杜磊, 苏亚慧 2013 物理学报 62 140703]
[12]	Sawyer S, Rumyantsev S L, Shur M S, Pala N, Bilenko Yu, Zhang J P, Hu X, Lunev A, Deng J, Gaska R 2006 J. Appl. Phys. 100 034504
[13]	Vilius Palenskis, Jonas Matukas, Sandra Pralgauskaité 2010 Solid-State Electronics 54 781
[14]	Rumyantsev S L, Wetzel C, Shur M S 2006 J. Appl. Phys. 100 084506
[15]	Jevtić M M 2004 Microelectron. Reliab. 44 1123
[16]	Jiang J P, Sun C C 2010 Heterojunction Principles and Devices (Beijing: Publishing House Of Electronics Industry) p216-217 (in Chinese) [江剑平, 孙成城编著 2010 异质结原理与器件 (北京: 电子工业出版社) 第216–217页]
[17]	Averkiev N S, Chernyakov A E, Levinshtein M E, Petrov P V, Yakimov E B, Shmidt N M, Shabunina E I 2009 Physica B: Condensed Matter 404 4896
[18]	Bychikhin S, Pogany D, Vandamme L K J, Meneghesso G, Zanoni E 2005 J. Appl. Phys. 97 123714
[19]	Chernyakov A E, Sobolev M M, Ratnikov V V, Shmidt N M, Yakimovb E B 2009 Superlattices Microstructures 45 301
[20]	Wong H 2003 Microelectron. Reliab 43 585

施引文献

[1]	Akasaki I, Amano H, Itoh K, Koide N, Manabe K 1992 Int. Phys. Conf. Ser. 129 851
[2]	Amano H, Sawaki N, Akasaki I, Toyoda Y 1986 Appl. Phys. Lett. 48 353
[3]	Nakamura S, Mukai T 1992 Jpn J. Appl. Phys. 31 1457
[4]	Nakamura S, Mukai T, Senoh M 1994 Appl. Phys. Lett. 64 1687
[5]	Nakamura S, Senoh M, Mukai T 1993 Jpn. J. Appl. Phys. 32 L8
[6]	Chang M H, Das D, Varde P V, Pecht M 2012 Microelectron. Reliab. 52 5762
[7]	Katsushi Akita, Takashi Kyono, Yusuke Yoshizumi, Hiroyuki Kitabayashi, Koji Katayama 2007 J. Appl. Phys. 101 033104
[8]	Yen-Kuang Kuo, Tsun-Hsin Wang, Jih-Yuan Chang, Miao-Chan Tsai 2011 Appl. Phys. Lett. 99 091107
[9]	Cai J X, Sun H Q, Zheng H, Zhang P J, Guo Z Y 2014 Chin. Phys. B 23 058502
[10]	Hu J, Du L, Zhuang Y Q, Bao J l, Zhou J 2006 Acta Phys.Sin. 55 1384 (in Chinese) [胡瑾, 杜磊, 庄奕琪, 包军林, 周江 2006 物理学报 55 1384]
[11]	Liu Y A, Zhuang Y Q, Du L, Su Y H 2013 Acta Phys. Sin. 62 140703 (in Chinese) [刘宇安, 庄奕琪, 杜磊, 苏亚慧 2013 物理学报 62 140703]
[12]	Sawyer S, Rumyantsev S L, Shur M S, Pala N, Bilenko Yu, Zhang J P, Hu X, Lunev A, Deng J, Gaska R 2006 J. Appl. Phys. 100 034504
[13]	Vilius Palenskis, Jonas Matukas, Sandra Pralgauskaité 2010 Solid-State Electronics 54 781
[14]	Rumyantsev S L, Wetzel C, Shur M S 2006 J. Appl. Phys. 100 084506
[15]	Jevtić M M 2004 Microelectron. Reliab. 44 1123
[16]	Jiang J P, Sun C C 2010 Heterojunction Principles and Devices (Beijing: Publishing House Of Electronics Industry) p216-217 (in Chinese) [江剑平, 孙成城编著 2010 异质结原理与器件 (北京: 电子工业出版社) 第216–217页]
[17]	Averkiev N S, Chernyakov A E, Levinshtein M E, Petrov P V, Yakimov E B, Shmidt N M, Shabunina E I 2009 Physica B: Condensed Matter 404 4896
[18]	Bychikhin S, Pogany D, Vandamme L K J, Meneghesso G, Zanoni E 2005 J. Appl. Phys. 97 123714
[19]	Chernyakov A E, Sobolev M M, Ratnikov V V, Shmidt N M, Yakimovb E B 2009 Superlattices Microstructures 45 301
[20]	Wong H 2003 Microelectron. Reliab 43 585

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