不同离子辐照氟化锂材料时原位发光光谱测量分析

仇猛淋; 赵国强; 王庭顺; 罗长维; 王广甫; 张丰收; 吕沙沙; 廖斌

doi:10.7498/aps.69.20200020

摘要

在BNU400注入机上搭建的离子激发发光(ion beam induced luminescence, IBIL)测量装置上, 开展了相同能量(100 keV)条件下的3种离子(H⁺、He⁺以及O⁺)辐照氟化锂材料时的IBIL光谱的原位测量工作, 对比研究离子种类对氟化锂材料辐照缺陷的生成及其演变行为的影响. 结合SRIM(Stopping and Range of Ions in Matter)模拟的结果, 可以发现He⁺辐照时的IBIL光谱强度最高, 这是由于He⁺激发产生的电子空穴对密度高于H⁺,而O⁺辐照时由于激发出的电子空穴对密度过高引起的非辐射复合比例增加, 从而导致发光效率过低; 质量数越大的离子辐照时, 核阻止本领越大, 会加快缺陷的生成和湮灭速率, 降低达到平衡状态时的发光强度. 近红外波段的$ \rm F_3^{-}/F_2^+ $色心发光峰强度及其演变行为表明其耐辐照性能好于可见光波段的F₂色心.

关键词:

Abstract

To contrast the generation and their evolution behaviors of irradiation damage in lithium fluoride under various ion, in situ luminescence measurements from lithium fluoride are carried out under 100 keV H⁺, He⁺ and O⁺ on the ion beam induced luminescence(IBIL) experimental setup on BNU400 ion implanter. Combined with Stopping and Range of Ions in Matter (SRIM) calculation of 100 keV H⁺, He⁺ and O⁺ stopping power in lithium fluoride, the emission intensity under He⁺ is the strongest,due to the higher excitation density of electron-hole pairs than them under H⁺ and the rising non-radiative recombination ratio under heavy ion O⁺. With the mass number increase of the incident ion, the nuclear stopping power would be increased, resulting in the faster rate of both formation and annihilation of point defects、the lower fluence for F-type centers reaching the highest intensity and the weaker luminescence intensity at the state of equilibrium. The irradiation resistance of $ \rm F_3^{-}/F_2^+ $ centers at 880 nm are better than the F₂ centers at 670 nm, shown not only in the slower formation and annihilation rates of $ \rm F_3^{-}/F_2^+ $ centers but also the higher luminescence intensity of $ \rm F_3^{-}/F_2^+ $ centers under heavy ion O⁺.

Keywords:

作者及机构信息

1.
北京师范大学核科学与技术学院, 射线束教育部重点实验室, 北京　100875

2.
北京市辐射中心, 北京　100875

通信作者: 王广甫, 88088@bnu.edu.cn

基金项目: 国家自然科学基金青年科学基金(批准号: 11905010)、中央高校基本科研业务费专项资金(批准号: 2018NTST04)、中国博士后科学基金(批准号: 2019M650526)和广东省重点领域研发计划(批准号: 2019B090909002)资助的课题

Authors and contacts

1.
Key Laboratory of beam technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China

2.
Beijing Radiation Center, Beijing 100875, China

Corresponding author: Wang Guang-fu, 88088@bnu.edu.cn

Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11905010), the Fundamental Research Funds for the Central Universities (2018NTST04), the China Postdoctoral Science Foundation funded project(2019M650526)and Guangdong Province Key Area R&D Program (2019B090909002)

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参考文献

[1]	黄振辉 1983 人工晶体学报 4 36 Huang Z H, 1983 J. Synthetic. Cryst. 4 36
[2]	Dergachev A Y, Mirov S B 1998 Opt. Commun. 147 107 Google Scholar
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施引文献

图 1 BNU400注入机IBIL装置示意图

Fig. 1. Schematic of the IBIL experimental setup on BNU400 ion implanter

下载: 全尺寸图片幻灯片

图 2 100 keV能量时H⁺、He⁺和O⁺离子在氟化锂中的阻止本领的SRIM 模拟结果

Fig. 2. SRIM calculation of 100 keV H⁺, He⁺ and O⁺ stopping power in lithium fluoride

下载: 全尺寸图片幻灯片

图 3 100 keV的H⁺辐照单晶氟化锂的发光强度随注量演变情况

Fig. 3. Emission intensity as function of both fluence and wavelength obtained under 100 keV H⁺

下载: 全尺寸图片幻灯片

图 4 100 keV的H⁺离子辐照氟化锂时296 nm、340 nm和400 nm处发光强度随注量演变情况

Fig. 4. Evolutions of the luminescence peak intensities at 296, 340, 400 nm with the irradiation fluence under 100 keV H⁺

下载: 全尺寸图片幻灯片

图 5 100 keV的H⁺离子辐照氟化锂时540 nm、670 nm和880 nm处发光强度随注量演变情况

Fig. 5. Evolutions of the luminescence peak intensities at 540, 670, 880 nm with the irradiation fluence under 100 keV H⁺

下载: 全尺寸图片幻灯片

图 6 100 keV的He⁺离子辐照氟化锂296 nm、340 nm和400 nm处发光强度随注量演变情况

Fig. 6. Evolutions of the luminescence peak intensities at 296, 340, 400 nm with the irradiation fluence under 100 keV He⁺

下载: 全尺寸图片幻灯片

图 7 100 keV的He⁺离子辐照氟化锂540 nm、670 nm和880 nm处发光强度随注量演变情况

Fig. 7. Evolutions of the luminescence peak intensities at 540, 670, 880 nm with the irradiation fluence under 100 keV He⁺

下载: 全尺寸图片幻灯片

图 8 100 keV的O⁺离子辐照氟化锂时296 nm、340 nm和400 nm处发光强度随注量演变情况

Fig. 8. Evolutions of the luminescence peak intensities at 296, 340, 400 nm with the irradiation fluence under 100 keV O⁺

下载: 全尺寸图片幻灯片

图 9 100 keV的O⁺离子辐照氟化锂540 nm、670 nm和880 nm处发光强度随注量演变情况

Fig. 9. Evolutions of the luminescence peak intensities at 540, 670, 880 nm with the irradiation fluence under 100 keV O⁺

下载: 全尺寸图片幻灯片

表 1 100 keV的H⁺、He⁺和O⁺3种离子辐照氟化锂材料的结果对比

Table 1. Comparisons of lithium fluoride under 100 keV H⁺, He⁺ and O⁺

离子种类	$ \rm F_3^{-} $色心 Φ_max/cm^–2	F₂色心 Φ_max/cm^–2	$ \rm F_3^{-}/F_2^+ $色心 Φ_max/cm^–2	Se/eV·Å^–1	Sn/eV·Å^–1	R_p/μm
H⁺	10 × 10¹³	11.5 × 10¹³	24.3 × 10¹³	13.92	0.0232	0.8336
He⁺	5 × 10¹³	3.3 × 10¹³	9.5 × 10¹³	21.04	0.3004	0.6708
O⁺	3.8 × 10¹³	3 × 10¹³	5.9 × 10¹³	25.64	10.15	0.2459

下载: 导出CSV

[1]	黄振辉 1983 人工晶体学报 4 36 Huang Z H, 1983 J. Synthetic. Cryst. 4 36
[2]	Dergachev A Y, Mirov S B 1998 Opt. Commun. 147 107 Google Scholar
[3]	Baldacchini G, Davidson A T, Kalinov V S, KozakiewiczA G, Montereali R M, Nichelatti E, Voitovich A P 2007 J. Lumin. 122 371
[4]	Ribeiro D R S, Souza D N, Maia A F, Baldochi S L, Caldas L V E 2008 Radiat. Meas. 43 1132 Google Scholar
[5]	Shiran N, Belsky A, Gektin A, Gridin S, Boiaryntseva I 2013 Radiat. Meas. 56 23 Google Scholar
[6]	Voitovich A P, Kalinov V S, Runets L P, Stupak A P, Martynovich E F, Montereali R M, Baldacchini G 2013 J. Lumin. 143 207 Google Scholar
[7]	Qiu M L, Chu Y J, Wang G F, Xu M, Zheng L 2017 Chin. Phys. Lett. 34 016104 Google Scholar
[8]	Baldacchini G 2002 J. Lumin. 100 333 Google Scholar
[9]	Skuratov V A, Gun K J, Stano J, Zagorski D L 2006 Nucl. Instrum.Meth. Phys. Res. B 245 194 Google Scholar
[10]	杨百瑞, 李文琪 1993 人工晶体学报 2 163 Yang B R, Li W Q 1993 J. Synthetic. Cryst. 2 163
[11]	Townsend P D, Wang Y F 2013 Energy.Proced. 41 64 Google Scholar
[12]	Crespillo M L, Graham J T, Zhang Y, Weber W J 2016 J. Lumin. 172 208 Google Scholar
[13]	Skuratov V A, Didyk A Y, Alazm S A 1997 Radiat. Phys. Chem. 50 183 Google Scholar
[14]	Valotto G, Quaranta A, Piccinini M, Montereali R M 2015 Opt. Mater. 49 1 Google Scholar
[15]	仇猛淋, 王广甫, 褚莹洁, 郑力, 胥密, 殷鹏 2017 物理学报 66 207801 Google Scholar Qiu M L, Wang G F, Chu Y J, Zheng L, Xu M, Yin P 2017 Acta Phys. Sin. 66 207801 Google Scholar
[16]	Chu Y J, Wang G F, Zheng L, Qiu M L, Yin P, Xu M 2018 Surf. Coat. Tech. 348 91 Google Scholar
[17]	Bachiller-Perea D, Jiménez-Rey D, Muñoz-Martín A, Agulló-López, F 2016 J. Phys. D. Appl. Phys. 49 085501 Google Scholar
[18]	Jiménez-Rey D, Peña-Rodríguez O, Manzano-Santamaría J, Olivares J, Muñoz-Martín A, Rivera A, Agulló-López F 2012 Nucl.Instrum.Meth. Phys. Res. B 286 282 Google Scholar
[19]	Crespillo M L, Graham J T, Agullo-Lopez F, Zhang Y, Weber W J 2017 J. Phys. Chem. C. 121 19758 Google Scholar
[20]	Agullo-Lopez F, Climent-Font A, Muñoz-Martín Á, Olivares J, Zucchiatti A 2016 Prog. Mater. Sci. 76 1 Google Scholar
[21]	Rivera A, Méndez A, García G, Olivares J, Cabrera J M, Agulló-López F 2008 J. Lumin. 128 703 Google Scholar

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