| [1] |
HUANG Zekang, GE Xingjun, ZHANG Yang, ZHANG Peng, ZHANG Zehai, ZHOU Yang, LV Jiahua. The Electromagnetic Pulse Damage Effects on Gallium Arsenide Solar Cells. Acta Physica Sinica,
2025, 74(15): .
doi: 10.7498/aps.74.20250469
|
| [2] |
Zhao Jing, Yu Hui-Long, Liu Wei-Wei, Guo Jing. Analysis of the relation between spectral response and absorptivity of GaAs photocathode. Acta Physica Sinica,
2017, 66(22): 227801.
doi: 10.7498/aps.66.227801
|
| [3] |
Fan Zheng-Fu, Tan Zhi-Yong, Wan Wen-Jian, Xing Xiao, Lin Xian, Jin Zuan-Ming, Cao Jun-Cheng, Ma Guo-Hong. Study on ultrafast dynamics of low-temperature grown GaAs by optical pump and terahertz probe spectroscopy. Acta Physica Sinica,
2017, 66(8): 087801.
doi: 10.7498/aps.66.087801
|
| [4] |
Yang Jian-Song, Li Bao-Xing. Study of the stability of gallium-arsenic ion clusters. Acta Physica Sinica,
2006, 55(12): 6562-6569.
doi: 10.7498/aps.55.6562
|
| [5] |
Xu Yue-Sheng, Yang Xin-Rong, Wang Hai-Yun, Tang Lei, Liu Cai-Chi, Wei Xin, Qin Dao-Zhi. Micro-distribution of carbon in semi-insulating gallium arsenide. Acta Physica Sinica,
2005, 54(4): 1904-1908.
doi: 10.7498/aps.54.1904
|
| [6] |
Xu Yue-Sheng, Tang Lei, Wang Hai-Yun, Liu Cai-Chi, Hao Jing-Chen. Study on the cell structure in semi-insulation gallium arsenide. Acta Physica Sinica,
2004, 53(2): 651-655.
doi: 10.7498/aps.53.651
|
| [7] |
WANG YOU-NIAN, MA TENG-CAI, GONG YE. ELECTRONIC STOPPING POWER AND EFFECTIVE CHARGE OF HEAVY ION-BEAM IN HOT TARGETS. Acta Physica Sinica,
1993, 42(4): 631-639.
doi: 10.7498/aps.42.631
|
| [8] |
MA HAI-MING, LI FU-MING. SELF-TRANSMISSION OF PICOSECOND LIGHT PULSES IN GaAs. Acta Physica Sinica,
1989, 38(9): 1530-1533.
doi: 10.7498/aps.38.1530
|
| [9] |
JIN WEI-GUO, ZHAO GUO-QING. HALF WAVELENGTH AND STOPPING POWER FOR PLANAR CHANNELED 4He+ IONS IN Al AND Si CRYSTALS. Acta Physica Sinica,
1988, 37(7): 1131-1136.
doi: 10.7498/aps.37.1131
|
| [10] |
MO DANG, PAN SHI-HONG, W. E. SPICER, I. LINDAU. PHOTOELECTRON SPECTROSCOPY FOR VALENCE BAND OF SILVER AND GOLD FILMS ON GALLIUM ARSENIDE. Acta Physica Sinica,
1983, 32(11): 1467-1470.
doi: 10.7498/aps.32.1467
|
| [11] |
CHENG ZHAO-NIAN, ZHU WEN-YU, WANG WEI-YUAN. CALCULATION OF RANGE STATISTIC PARAMETERS FOR IONS IMPLANTED IN GaAs. Acta Physica Sinica,
1982, 31(7): 922-931.
doi: 10.7498/aps.31.922
|
| [12] |
WANG WEI-YUAN, QIAO YONG, LIN CHENG-LU, LUO CHAO-WEI, ZHOU YONG-QUAN. SILICON IMPLANTATION IN SEMI-INSULATING GaAs SUBSTRATE. Acta Physica Sinica,
1982, 31(1): 71-77.
doi: 10.7498/aps.31.71
|
| [13] |
WANG DE-NING, WANG WEI-YUAN. CALCULATION OF THE z OSCILLATION OF ELECTRONIC STOPPING POWER. Acta Physica Sinica,
1982, 31(3): 348-354.
doi: 10.7498/aps.31.348
|
| [14] |
WANG WEI-YUAN. MEASUREMENT OF CARRIER LIFETIME OF GaAs DIODES WITH p-n AND M-S JUNCTIONS BY STEP RECOVERY METHOD. Acta Physica Sinica,
1979, 28(3): 341-349.
doi: 10.7498/aps.28.341
|
| [15] |
ZHOU BING-LIN, WANG LE, SHAO YONG-FU, CHEN QI-YU. MEASUREMENT OF DEEP LEVEL TRAPS IN GaAs. Acta Physica Sinica,
1979, 28(3): 350-357.
doi: 10.7498/aps.28.350
|
| [16] |
WANG WEI-YUAN, XU JING-YANG, NI QI-MIN, TAN RU-HUAN, LIU YUE-QIN, QIU YUE-YING. A STUDY OF PROTON IMPLANTATION FOR GaAs. Acta Physica Sinica,
1979, 28(5): 86-95.
doi: 10.7498/aps.28.86
|
| [17] |
GAAS SINGLE CRYSTAL RESEARCH GROUP. TE-DOPED GaAs CRYSTALS OF LOW DISLOCATION DENSITY GROWN BY THE HORIZONTAL BRIDGMAN METHOD. Acta Physica Sinica,
1976, 25(2): 179-180.
doi: 10.7498/aps.25.179
|
| [18] |
. . Acta Physica Sinica,
1965, 21(5): 1077-1079.
doi: 10.7498/aps.21.1077
|
| [19] |
SHAW NAN, LIU YI-HUAN. X-RAY MEASUREMENT OF THE THERMAL EXPANSION OF GERMANIUM, SILICON, INDIUM ANTIMONIDE AND GALLIUM ARSENIDE. Acta Physica Sinica,
1964, 20(8): 699-704.
doi: 10.7498/aps.20.699
|
| [20] |
YUAN KONG, CHEN NING-CHIANG. PRESSURE DEPENDENCE OF SOME TUNNELING PARAMETERS IN NARROW GALLIUM ARSENIDE P-N JUNCTIONS. Acta Physica Sinica,
1964, 20(8): 806-813.
doi: 10.7498/aps.20.806
|
下载:
