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ELECTRONIC STOPPING POWER OF B+ IMPLANTATION IN GaAs

CHENG ZHAO-NIAN WANG WEI-YUAN

ELECTRONIC STOPPING POWER OF B+ IMPLANTATION IN GaAs

CHENG ZHAO-NIAN, WANG WEI-YUAN
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  • Received Date:  04 October 1984
  • Published Online:  31 March 2005

ELECTRONIC STOPPING POWER OF B+ IMPLANTATION IN GaAs

  • 1. 中国科学院上海冶金研究所

Abstract: Based on published experimental data of Rp, a proposed relative correction method combining with numerical solution program of LSS equation was used to calculate the electronic stopping power of B+ implantation in GaAs, as follows NSe(E) = 12.4E0.605,Using this expression, the range statistic parameters Rp,△Rp and R⊥for B+ implanted GaAs were calculated.

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