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HALF WAVELENGTH AND STOPPING POWER FOR PLANAR CHANNELED 4He+ IONS IN Al AND Si CRYSTALS

JIN WEI-GUO ZHAO GUO-QING

HALF WAVELENGTH AND STOPPING POWER FOR PLANAR CHANNELED 4He+ IONS IN Al AND Si CRYSTALS

JIN WEI-GUO, ZHAO GUO-QING
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  • Received Date:  06 July 1987
  • Published Online:  06 July 2005

HALF WAVELENGTH AND STOPPING POWER FOR PLANAR CHANNELED 4He+ IONS IN Al AND Si CRYSTALS

  • 1. 复旦大学原子核科学系

Abstract: Using a detection system with high resolution, backscattering spectra for 1-2 MeV 4He+ incident along Al (100) and Si(l00) and (110) planes are measured at a variety of entrance (θin) and exit (θout) angles. The energy intervals between the peaks in the energy spectra are plotted as a function of cosθin/cosθout Half wavelength and stopping power for 1-2 MeV 4He+ in these three channeling planes are obtained. The experimental half wavelength is in agreement with the calculated value within the limit of error and the planar channeled stopping power is slightly greater than the random stopping power.

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