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RELATIONSHIP BETWEEN NEW DONOR AND OXIDE PRECl-PITATES IN ANNEALED CZ-SILICON

XIAO ZHI-GANG KE JUN LI JIA-QUAN

RELATIONSHIP BETWEEN NEW DONOR AND OXIDE PRECl-PITATES IN ANNEALED CZ-SILICON

XIAO ZHI-GANG, KE JUN, LI JIA-QUAN
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  • Received Date:  02 September 1988
  • Published Online:  08 July 2005

RELATIONSHIP BETWEEN NEW DONOR AND OXIDE PRECl-PITATES IN ANNEALED CZ-SILICON

  • 1. (1)北京科技大学材料物理系; (2)北京科技大学材料物理系,南京轧钢总厂经济发展部

Abstract: New donor and oxygen precipitate in CZ-silicon are studied by means of Hall measurement, IR measurement and TEM observation. Two types of defect are observed in specimens annealed at 650-750℃, that is, rod-like defects and plate-like defects. New donor generation is mainly related to the plate-like defects, which are indentified as β-cristobalite according to the H-REM results. It is suggested that the new donor originates from the ionization of dangling bonds of silicon atoms on precipitates/matrix interfaces and is controlled by the neucleation and growth of β-cristobalite precipitates.

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