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The influence of substrates on the formation of cubic boron nitride(c-BN) thin films was reported. The c-BN thin films were deposited on different substrates with hot-filament-assisted plasma CVD and RF sputter. In the CVD method, NH3,B2H6 and H2 were reacting gases and Si,Ni,Co,stainless steel and other materials were substrates. The experiments showed that the cubic phase content in c-BN thin films was affected by substrates. The film on Ni substrate was the best among all the substrates in the CVD method, and its cubic phase content reached over 80%. Our study also found that in the CVD method a Ni interlayer on the Si substrate can improve the quality of the c-BN thin films than directly on Si substrate. In the sputter method, the working gas was N2 and Ar, hot-pressed hexagonal boron nitride(h-BN) of 4N purity was used as sputtering target, the c-BN thin film with over 90% content of cubic phase was successively deposited on Si substrate. In our research, the boron nitride thin films were characterized by Fourier Transform Infrared(FTIR) Spectra and X-ray diffraction.Finally we concluded that for CVD method the cubic phase content and adhesion are highly affected by the crystal lattice mismatch between c-BN and substrate materials; however, for sputter method the crystal lattice mismatch between c-BN and substrate materials little affects the quality of c-BN thin films.
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Keywords:
- c-BN thin film /
- substrate /
- hot filament CVD /
- RF sputter
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[9] P.B. Mirkarimi, K.F. McCary, D.L. Medlin, W.G. Wolf, T.A. Friedmann, E.J.Klaus, G.F.Cardinale, D.G.Howitt, J. Mater.Res., 9(1994), 2925.
[10] Z.Song, F.Zhang, Y.Guo, G.Chen, Appl.Phys.Lett., 65(1994), 2669.
[11] G.H. Chen et al., Chinese Science Bulletin, 40(1995), 499(in Chinese)[陈光华、郭永平等,科学通报,40(1995),499].
[12] Jin-xiang Deng, Bo Wang, Li-wen Tan, Hui Yan, Guang-hua Chen, Thin Solid Films, 368(2000), 317.
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[1] Z.Z.Song et al., Physics, 24(1995), 307(in Chinese)[宋志忠、郭永平、张仿清、陈光华,物理,24(1995),307].
[2] M.Sokolowski, J.Cryst.Growth, 46(1979), 136.
[3] F.ZhangY. Guo, Z.Song, G.Chen, Appl.Phys.Lett., 65(1994), 971.
[4] P.B. Mirkarimi, K.F. McCarty, G.F. Cardinale, D.L. Medlin, D.K. Ottesen, H.A.Johnsen, J.V ac.Sci.Technol., A14(1996) 251.
[5] H.Luthjie, K.Bewilogua, S.Daaud et al., Thin Solid Films, 257(1995), 40.
[6] M.Okamoto, Y.Utisumi, Y.OsakaJpn., J.Appl.Phys., 29(1990), L1004.
[7] P.B. Mirkarimi, K.F. McCarty, D.L. Medlin, Mater.Sci.Engin., R21(1997), 47.
[8] T.A. Friedmann, P.B. Mirkarimi, D.L. Medlin, K.F. McCarty, E.J. Klaus, D. Boehme, H.A. Johnsen, M.J. Mills, D.K. Ottesen, J.Appl.Phys., 76(1994), 3088.
[9] P.B. Mirkarimi, K.F. McCary, D.L. Medlin, W.G. Wolf, T.A. Friedmann, E.J.Klaus, G.F.Cardinale, D.G.Howitt, J. Mater.Res., 9(1994), 2925.
[10] Z.Song, F.Zhang, Y.Guo, G.Chen, Appl.Phys.Lett., 65(1994), 2669.
[11] G.H. Chen et al., Chinese Science Bulletin, 40(1995), 499(in Chinese)[陈光华、郭永平等,科学通报,40(1995),499].
[12] Jin-xiang Deng, Bo Wang, Li-wen Tan, Hui Yan, Guang-hua Chen, Thin Solid Films, 368(2000), 317.
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