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Kinetic Monte Carlo simulation of the epitaxial growth mechanism on the vicinal surface

Yu Jian-Guo Wang Ji-Qing Wang Li Mao Hui-Bing Jing Wei-Ping Dai Ning

Kinetic Monte Carlo simulation of the epitaxial growth mechanism on the vicinal surface

Yu Jian-Guo, Wang Ji-Qing, Wang Li, Mao Hui-Bing, Jing Wei-Ping, Dai Ning
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Publishing process
  • Received Date:  19 June 2005
  • Accepted Date:  13 January 2006
  • Published Online:  01 October 2006

Kinetic Monte Carlo simulation of the epitaxial growth mechanism on the vicinal surface

  • 1. (1)华东师范大学信息科学技术学院,上海 200062; (2)华东师范大学信息科学技术学院,上海 200062;中国科学院红外物理国家实验室,上海 200083; (3)南通大学江苏省专用集成电路设计重点实验室,江苏南通 226007; (4)中国科学院红外物理国家实验室,上海 200083

Abstract: In this paper the epitaxial growth mechanism on vicinal GaAs(001) surface is studied using the kinetic Monte Carlo simulation method. The Ehrlich-Schwoebel barrier has great influence on the growth mechanism of the vicinal surface. The simulation results show that the downward movement to a lower step of the adatoms can be inhibited by Ehrlich-Schwoebel barrier at low temperature, while the adatoms can move to the lower step at high temperature. At the beginning of growth, the adatoms are almost distributed uniformly on the steps. When the surface coverage reaches to certain value, the step nucleation begins. Meanwhile, the adatoms begin to accumulate at the upper step because of the Ehrlich-Schwoebel barrier. If there were no Ehrlich-Schwoebel barrier, the adatoms at the upper step could be depleted completely. The Ehrlich-Schwoebel barrier has great influence on the growth mode of the vicinal surface, and it will increase the temperature for onset of the step growth mode.

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