Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Magnetoelectric heterostructure and device application

Yang Na-Na Chen Xuan Wang Yao-Jin

Citation:

Magnetoelectric heterostructure and device application

Yang Na-Na, Chen Xuan, Wang Yao-Jin
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • The magnetoelectric (ME) heterostructure is composed of ferromagnetic and ferroelectric materials. The heterostructural ME effect originates from piezoelectric effect in the ferroelectric component and magnetostrictive effect in the ferromagnetic component. The magnetoelectric heterostructure has higher magnetoelectric coupling coefficient and lower dielectric loss than the particulate composites, and thus leading to several promising applications such as in the magnetic field sensors, the energy harvesters, antenna and memory devices. In this paper, we review the recent research progress in ME heterostructure for device applications, and present a development course of ME heterostructure. Finally, we also summarize the challenges of developing the ME heterostructure and point out its perspectives.
      Corresponding author: Wang Yao-Jin, yjwang@njust.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51602156, 51790492), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20160824), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 30916011104, 30916011208).
    [1]

    Dong S, Liu J M 2010 Physics 39 714 (in Chinese) [董帅, 刘俊明 2010 物理 39 714]

    [2]

    Li X G, Xu X Q, Qian T 2005 J. Sichuan Univ. (Nat. Sci. Ed.) 42 43 (in Chinese) [李晓光, 许雪芹, 钱天 2005 四川大学学报(自然科学版) 42 43]

    [3]

    Dong S, Xiang H J 2014 Physics 43 173 (in Chinese) [董帅, 向红军 2014 物理 43 173]

    [4]

    Yu P, Zhang J X 2013 Prog. Phys. 33 369 (in Chinese) [于浦, 张金星 2013 物理学进展 33 369]

    [5]

    Nan C W, Bichurin M I, Dong S X, Viehland D, Srinivasan G 2008 J. Appl. Phys. 103 031101

    [6]

    Jin J Z, Lu S G, Chanthad C, Zhang Q M, Hague M A, Wang Q 2011 Adv. Mater. 23 3853

    [7]

    van Run A M J G, Terrell D R, Scholing J H 1974 J. Mater. Sci. 9 1710

    [8]

    Benveniste Y 1995 Phys. Rev. B 51 16424

    [9]

    Nan C W 1994 Phys. Rev. B 50 6082

    [10]

    Srinivasan G, Rasmussen E T, Gallegos J, Srinivasan R, Bokhan Y I, Laletin V M 2001 Phys. Rev. B 64 214408

    [11]

    Zhou J P, Shi Z, Liu G, He H C, Nan C W 2006 Acta Phys. Sin. 55 3766 (in Chinese) [周剑平, 施展, 刘刚, 何泓材, 南策文 2006 物理学报 55 3766]

    [12]

    Fiebig M 2005 J. Phys. D: Appl. Phys. 38 R123

    [13]

    Priya S, Islam R, Dong S X, Viehland D 2007 J. Electroceram. 19 147

    [14]

    Ryu J, Carazo A V, Uchino K, Kim H E 2001 Jpn. J. Appl. Phys. Part 1 40 4948

    [15]

    Ryu J, Priya S, Uchino K, Kim H E 2002 J. Electroceram. 8 107

    [16]

    Wang Y J, Gray D, Berry D, Gao J Q, Li M H, Li J F, Viehland D 2011 Adv. Mater. 23 4111

    [17]

    Zhang Y, Gao Y J, Hu C, Tan X Y, Qiu D, Zhang T T, Zhu Y D, Li M Y 2016 Acta Phys. Sin. 65 167501 (in Chinese) [张源, 高雁军, 胡诚, 谭兴毅, 邱达, 张婷婷, 朱永丹, 李美亚 2016 物理学报 65 167501]

    [18]

    Yang C H, Wen Y M, Li P, Bian L X 2008 Acta Phys. Sin. 57 7292 (in Chinese) [阳昌海, 文玉梅, 李平, 卞雷祥 2008 物理学报 57 7292]

    [19]

    Bichurin M I, Petrov V M, Averkin S V, Liverts E 2010 J. Appl. Phys. 107 053905

    [20]

    Bichurin M I, Petrov V M, Averkin S V, Liverts E 2010 J. Appl. Phys. 107 053904

    [21]

    Li M H, Berry D, Das J, Gray D, Li J F, Viehland D 2011 J. Am. Ceram. Soc. 94 3738

    [22]

    Gao J Q, Das J, Xing Z P, Li J F, Viehland D 2010 J. Appl. Phys. 108 084509

    [23]

    Liu G, Nan C W, Cai N, Lin Y H 2004 J. Appl. Phys. 95 2660

    [24]

    Bichurin M I, Kornev I A, Petrov V M, Tatarenko A S, Kiliba Y V, Srinivasan G 2001 Phys. Rev. B 64 094409

    [25]

    Dong S X, Li J F, Viehland D 2004 IEEE Trans. Ultrason. Ferr. 51 794

    [26]

    Wang Y J, Hasanyan D, Li M H, Gao J Q, Li J F, Viehland D 2013 IEEE Trans. Ultrason. Ferr. 60 1227

    [27]

    Dong S X, Li J F, Viehland D 2003 IEEE Trans. Ultrason. Ferr. 50 1253

    [28]

    Wang Y J, Hasanyan D, Li J F, Viehland D, Luo H S 2012 Appl. Phys. Lett. 100 202903

    [29]

    Hasanyan D, Gao J, Wang Y, Viswan R, Li M, Shen Y, Li J, Viehland D 2012 J. Appl. Phys. 112 013908

    [30]

    Dong S X, Li J F, Viehland D 2004 J. Appl. Phys. 96 3382

    [31]

    Gao J Q, Shen Y, Wang Y J, Finkel P, Li J F, Viehland D 2011 IEEE Trans. Ultrason. Ferr. 58 1545

    [32]

    Petrov V M, Srinivasan G, Bichurin M I, Galkina T A 2009 J. Appl. Phys. 105 063911

    [33]

    Wang Y J, Or S W, Chan H L W, Zhao X Y, Luo H S 2008 J. Appl. Phys. 103 124511

    [34]

    Dong S X, Li J F, Viehland D 2004 Appl. Phys. Lett. 85 5305

    [35]

    Jia Y M, Luo H S, Zhao X Y, Wang F F 2008 Adv. Mater. 20 4776

    [36]

    Zhai J Y, Dong S X, Xing Z P, Li J F, Viehland D 2006 Appl. Phys. Lett. 89 083507

    [37]

    Wang Y J, Gray D, Berry D, Gao J Q, Li J F, Viehland D, Luo H S 2011 Phys. Status Solidi R 5 232

    [38]

    Jiao J 2013 Ph. D. Dissertation (Shanghai: University of Chinese Academy of Sciences) (in Chinese) [焦杰 2013 博士学位论文 (上海:中国科学院大学)]

    [39]

    Chu Z, Shi H, Shi W, Liu G, Wu J, Yang J, Dong S 2017 Adv. Mater. 29 1606022

    [40]

    Dong S X, Zhai J, Bai F, Li J F, Viehland D 2005 Appl. Phys. Lett. 87 062502

    [41]

    Bichurin M I, Petrov R V, Petrov V M 2013 Appl. Phys. Lett. 103 092902

    [42]

    Liu G X, Zhang C L, Dong S X 2014 J. Appl. Phys. 116 074104

    [43]

    Palneedi H, Maurya D, Kim G Y, Priya S, Kang S J L, Kim K H, Choi S Y, Ryu J 2015 Appl. Phys. Lett. 107 012904

    [44]

    Palneedi H, Maurya D, Geng L D, Song H C, Hwang G T, Peddigari M, Annapureddy V, Song K, Oh Y S, Yang S C, Wang Y U, Priya S, Ryu J 2018 ACS Appl. Mater. Inte. 10 11018

    [45]

    Palneedi H, Maurya D, Kim G Y, Annapureddy V, Noh M S, Kang C Y, Kim J W, Choi J J, Choi S Y, Chung S Y, Kang S L, Priya S, Ryu J 2017 Adv. Mater. 29 1605688

    [46]

    Ramesh R, Spaldin N A 2007 Nat. Mater. 6 21

    [47]

    Ma J, Hu J M, Li Z, Nan C W 2011 Adv. Mater. 23 1062

    [48]

    Wan H, Xie L Q, Wu X Z, Liu X C 2005 Acta Phys. Sin. 54 3872 (in Chinese) [万红, 谢立强, 吴学忠, 刘希从 2005 物理学报 54 3872]

    [49]

    He H C, Lin Y H, Nan C W 2008 Chin. Sci. Bull. 53 1136 (in Chinese) [何泓材, 林元华, 南策文 2008 科学通报 53 1136]

    [50]

    Zheng R K, Li X G 2013 Prog. Phys. 33 359 (in Chinese) [郑仁奎, 李晓光 2013 物理学进展 33 359]

    [51]

    He H C, Wang J, Zhou B P, Nan C W 2007 Adv. Funct. Mater. 17 1333

    [52]

    He H C, Zhou J P, Wang J, Nan C W 2006 Appl. Phys. Lett. 89 052904

    [53]

    Deng C Y, Zhang Y, Ma J, Lin Y H, Nan C W 2007 J. Appl. Phys. 102 074114

    [54]

    Zhou J P, He H C, Zhang Y, Deng C Y, Shi Z, Nan C W 2007 Appl. Phys. A: Mater. 89 553

    [55]

    Marauska S, Jahns R, Greve H, Quandt E, Knchel R, Wagner B 2012 J. Micromech. Microeng. 22 065024

    [56]

    Marauska S, Jahns R, Kirchhof C, Claus M, Quandt E, Knoechel R, Wagner B 2013 Sensor. Actuat. A: Phys. 189 321

    [57]

    Jahns R, Zabel S, Marauska S, Gojdka B, Wagner B, Knchel R, Adelung R, Faupel F 2014 Appl. Phys. Lett. 105 052414

    [58]

    Greve H, Woltermann E, Jahns R, Marauska S, Wagner B, Knoechel R, Wuttig M, Quandt E 2010 Appl. Phys. Lett. 97 152503

    [59]

    Lage E, Kirchhof C, Hrkac V, Kienle L, Jahns R, Knoechel R, Quandt E, Meyners D 2012 Nat. Mater. 11 523

    [60]

    Wang Y J, Li J F, Viehland D 2014 Mater. Today 17 269

    [61]

    Wang Y J, Gao J Q, Li M H, Shen Y, Hasanyan D, Li J F, Viehland D 2014 Philos. Trans. A: Math. Phys. Eng. Sci. 372 20120455

    [62]

    Palneedi H, Annapureddy V, Priya S, Ryu J 2016 Actuators 5 9

    [63]

    Chu Z, PourhosseiniAsl M, Dong S 2018 J. Phys. D: Appl. Phys. 51 243001

    [64]

    Gao J Q, Wang Y J, Li M H, Shen Y, Li J F, Viehland D 2012 Mater. Lett. 85 84

    [65]

    Wang Y J, Gray D, Berry D, Li M H, Gao J Q, Li J F, Viehland D 2012 J. Alloy. Compd. 513 242

    [66]

    Wang Y J, Gray D, Gao J Q, Berry D, Li M H, Li J F, Viehland D, Luo H S 2012 J. Alloy. Compd. 519 1

    [67]

    Das J, Gao J, Xing Z, Li J F, Viehland D 2009 Appl. Phys. Lett. 95 092501

    [68]

    Wang Y J, Gray D, Berry D, Li J F, Viehland D 2012 IEEE Trans. Ultrason. Ferr. 59 859

    [69]

    Gao J Q, Gray D, Shen Y, Li J F, Viehland D 2011 Appl. Phys. Lett. 99 153502

    [70]

    Wang Y J, Li M H, Hasanyan D, Gao J Q, Li J F, Viehland D 2012 Appl. Phys. Lett. 101 092905

    [71]

    Yang Y D, Gao J Q, Wang Z G, Li M H, Li J F, Das J, Viehland D 2011 Mater. Res. Bull. 46 266

    [72]

    Li M H, Wang Z G, Wang Y J, Li J F, Viehland D 2013 Appl. Phys. Lett. 102 082404

    [73]

    Luo H S, Jiao J, Li X B, Zhao X Y, Xu Q, Yue Q W 2014 Mod. Phys. 26 36 (in Chinese) [罗豪甦, 焦杰, 李晓兵, 赵祥永, 许晴, 岳晴雯 2014 现代物理知识 26 36]

    [74]

    Li M H, Gao J Q, Wang Y J, Gray D, Li J F, Viehland D 2012 J. Appl. Phys. 111 104504

    [75]

    Xing Z P, Zhai J Y, Gao J Q, Li J F, Viehland D 2009 IEEE Electr. Device Lett. 30 445

    [76]

    Zhuang X, Sing M L C, Cordier C, Saez S, Dolabdjian C, Shen L, Li J F, Li M, Viehland D 2011 IEEE Sens. J. 11 2266

    [77]

    Jahns R, Greve H, Woltermann E, Quandt E, Knchel R 2012 Sensor. Actuat. A: Phys. 183 16

    [78]

    Liu Y T, Jiao J, Ma J S, Ren B, Li L Y, Zhao X Y, Luo H S, Shi L 2013 Appl. Phys. Lett. 103 212902

    [79]

    Salzer S, Hft M, Knchel R, Hayes P, Yarar E, Piorra A, Quandt E 2015 Proc. Eng. 120 940

    [80]

    Hayes P, Salzer S, Reermann J, Yarar E, Rbisch V, Piorra A, Meyners D, Hft M, Knchel R, Schmidt G, Quandt E 2016 Appl. Phys. Lett. 108 182902

    [81]

    Zhuang X, Lam Chok Sing M, Dolabdjian C 2013 IEEE Trans. Magn. 49 120

    [82]

    Dong S X, Zhai J Y, Li J F, Viehland D 2006 Appl. Phys. Lett. 88 082907

    [83]

    Nan T X, Hui Y, Rinaldi M, Sun N X 2013 Sci. Rep. 3 1985

    [84]

    Li M H, Matyushov A, Dong C Z, Chen H H, Lin H, Nan T X, Qian Z Y, Rinaldi M, Lin Y H, Sun N X 2017 Appl. Phys. Lett. 110 143510

    [85]

    Chu Z, Shi H, PourhosseiniAsl M J, Wu J, Shi W, Gao X, Yuan X, Dong S 2017 Sci. Rep. 7 8592

    [86]

    Ryu J, Kang J E, Zhou Y, Choi S Y, Yoon W H, Park D S, Choi J J, Hahn B D, Ahn C W, Kim J W, Kim Y D, Priya S, Lee S Y, Jeong S, Jeong D Y 2015 Energ. Environ. Sci. 8 2402

    [87]

    Annapureddy V, Na S M, Hwang G T, Kang M G, Sriramdas R, Palneedi H, Yoon W H, Hahn B D, Kim J W, Ahn C W, Park D S, Choi J J, Jeong D Y, Flatau A B, Peddigari M, Priya S, Kim K H, Ryu J 2018 Energ. Environ. Sci. 11 818

    [88]

    Yao Z, Wang Y E, Keller S, Carman G P 2015 IEEE Trans. Antenn. Propag. 63 3335

    [89]

    Domann J P, Carman G P 2017 J. Appl. Phys. 121 044905

    [90]

    Nan T, Lin H, Gao Y, Matyushov A, Yu G, Chen H, Sun N, Wei S, Wang Z, Li M, Wang X, Belkessam A, Guo R, Chen B, Zhou J, Qian Z, Hui Y, Rinaldi M, McConney M E, Howe B M, Hu Z, Jones J G, Brown G J, Sun N X 2017 Nat. Commun. 8 296

    [91]

    Shen J X, Shang D S, Chai Y S, Wang Y, Cong J Z, Shen S P, Yan L Q, Wang W H, Sun Y 2016 Phys. Rev. Appl. 6 064028

    [92]

    Nan C W 2015 Sci. Sin. Technol. 45 339 (in Chinese) [南策文 2015 中国科学: 技术科学 45 339]

    [93]

    Palneedi H, Yeo H G, Hwang G T, Annapureddy V, Kim J W, Choi J J, Trolier McKinstry S, Ryu J 2017 APL Mater. 5 096111

    [94]

    Zong Y, Zheng T, Martins P, Lanceros Mendez S, Yue Z, Higgins M J 2017 Nat. Commun. 8 38

  • [1]

    Dong S, Liu J M 2010 Physics 39 714 (in Chinese) [董帅, 刘俊明 2010 物理 39 714]

    [2]

    Li X G, Xu X Q, Qian T 2005 J. Sichuan Univ. (Nat. Sci. Ed.) 42 43 (in Chinese) [李晓光, 许雪芹, 钱天 2005 四川大学学报(自然科学版) 42 43]

    [3]

    Dong S, Xiang H J 2014 Physics 43 173 (in Chinese) [董帅, 向红军 2014 物理 43 173]

    [4]

    Yu P, Zhang J X 2013 Prog. Phys. 33 369 (in Chinese) [于浦, 张金星 2013 物理学进展 33 369]

    [5]

    Nan C W, Bichurin M I, Dong S X, Viehland D, Srinivasan G 2008 J. Appl. Phys. 103 031101

    [6]

    Jin J Z, Lu S G, Chanthad C, Zhang Q M, Hague M A, Wang Q 2011 Adv. Mater. 23 3853

    [7]

    van Run A M J G, Terrell D R, Scholing J H 1974 J. Mater. Sci. 9 1710

    [8]

    Benveniste Y 1995 Phys. Rev. B 51 16424

    [9]

    Nan C W 1994 Phys. Rev. B 50 6082

    [10]

    Srinivasan G, Rasmussen E T, Gallegos J, Srinivasan R, Bokhan Y I, Laletin V M 2001 Phys. Rev. B 64 214408

    [11]

    Zhou J P, Shi Z, Liu G, He H C, Nan C W 2006 Acta Phys. Sin. 55 3766 (in Chinese) [周剑平, 施展, 刘刚, 何泓材, 南策文 2006 物理学报 55 3766]

    [12]

    Fiebig M 2005 J. Phys. D: Appl. Phys. 38 R123

    [13]

    Priya S, Islam R, Dong S X, Viehland D 2007 J. Electroceram. 19 147

    [14]

    Ryu J, Carazo A V, Uchino K, Kim H E 2001 Jpn. J. Appl. Phys. Part 1 40 4948

    [15]

    Ryu J, Priya S, Uchino K, Kim H E 2002 J. Electroceram. 8 107

    [16]

    Wang Y J, Gray D, Berry D, Gao J Q, Li M H, Li J F, Viehland D 2011 Adv. Mater. 23 4111

    [17]

    Zhang Y, Gao Y J, Hu C, Tan X Y, Qiu D, Zhang T T, Zhu Y D, Li M Y 2016 Acta Phys. Sin. 65 167501 (in Chinese) [张源, 高雁军, 胡诚, 谭兴毅, 邱达, 张婷婷, 朱永丹, 李美亚 2016 物理学报 65 167501]

    [18]

    Yang C H, Wen Y M, Li P, Bian L X 2008 Acta Phys. Sin. 57 7292 (in Chinese) [阳昌海, 文玉梅, 李平, 卞雷祥 2008 物理学报 57 7292]

    [19]

    Bichurin M I, Petrov V M, Averkin S V, Liverts E 2010 J. Appl. Phys. 107 053905

    [20]

    Bichurin M I, Petrov V M, Averkin S V, Liverts E 2010 J. Appl. Phys. 107 053904

    [21]

    Li M H, Berry D, Das J, Gray D, Li J F, Viehland D 2011 J. Am. Ceram. Soc. 94 3738

    [22]

    Gao J Q, Das J, Xing Z P, Li J F, Viehland D 2010 J. Appl. Phys. 108 084509

    [23]

    Liu G, Nan C W, Cai N, Lin Y H 2004 J. Appl. Phys. 95 2660

    [24]

    Bichurin M I, Kornev I A, Petrov V M, Tatarenko A S, Kiliba Y V, Srinivasan G 2001 Phys. Rev. B 64 094409

    [25]

    Dong S X, Li J F, Viehland D 2004 IEEE Trans. Ultrason. Ferr. 51 794

    [26]

    Wang Y J, Hasanyan D, Li M H, Gao J Q, Li J F, Viehland D 2013 IEEE Trans. Ultrason. Ferr. 60 1227

    [27]

    Dong S X, Li J F, Viehland D 2003 IEEE Trans. Ultrason. Ferr. 50 1253

    [28]

    Wang Y J, Hasanyan D, Li J F, Viehland D, Luo H S 2012 Appl. Phys. Lett. 100 202903

    [29]

    Hasanyan D, Gao J, Wang Y, Viswan R, Li M, Shen Y, Li J, Viehland D 2012 J. Appl. Phys. 112 013908

    [30]

    Dong S X, Li J F, Viehland D 2004 J. Appl. Phys. 96 3382

    [31]

    Gao J Q, Shen Y, Wang Y J, Finkel P, Li J F, Viehland D 2011 IEEE Trans. Ultrason. Ferr. 58 1545

    [32]

    Petrov V M, Srinivasan G, Bichurin M I, Galkina T A 2009 J. Appl. Phys. 105 063911

    [33]

    Wang Y J, Or S W, Chan H L W, Zhao X Y, Luo H S 2008 J. Appl. Phys. 103 124511

    [34]

    Dong S X, Li J F, Viehland D 2004 Appl. Phys. Lett. 85 5305

    [35]

    Jia Y M, Luo H S, Zhao X Y, Wang F F 2008 Adv. Mater. 20 4776

    [36]

    Zhai J Y, Dong S X, Xing Z P, Li J F, Viehland D 2006 Appl. Phys. Lett. 89 083507

    [37]

    Wang Y J, Gray D, Berry D, Gao J Q, Li J F, Viehland D, Luo H S 2011 Phys. Status Solidi R 5 232

    [38]

    Jiao J 2013 Ph. D. Dissertation (Shanghai: University of Chinese Academy of Sciences) (in Chinese) [焦杰 2013 博士学位论文 (上海:中国科学院大学)]

    [39]

    Chu Z, Shi H, Shi W, Liu G, Wu J, Yang J, Dong S 2017 Adv. Mater. 29 1606022

    [40]

    Dong S X, Zhai J, Bai F, Li J F, Viehland D 2005 Appl. Phys. Lett. 87 062502

    [41]

    Bichurin M I, Petrov R V, Petrov V M 2013 Appl. Phys. Lett. 103 092902

    [42]

    Liu G X, Zhang C L, Dong S X 2014 J. Appl. Phys. 116 074104

    [43]

    Palneedi H, Maurya D, Kim G Y, Priya S, Kang S J L, Kim K H, Choi S Y, Ryu J 2015 Appl. Phys. Lett. 107 012904

    [44]

    Palneedi H, Maurya D, Geng L D, Song H C, Hwang G T, Peddigari M, Annapureddy V, Song K, Oh Y S, Yang S C, Wang Y U, Priya S, Ryu J 2018 ACS Appl. Mater. Inte. 10 11018

    [45]

    Palneedi H, Maurya D, Kim G Y, Annapureddy V, Noh M S, Kang C Y, Kim J W, Choi J J, Choi S Y, Chung S Y, Kang S L, Priya S, Ryu J 2017 Adv. Mater. 29 1605688

    [46]

    Ramesh R, Spaldin N A 2007 Nat. Mater. 6 21

    [47]

    Ma J, Hu J M, Li Z, Nan C W 2011 Adv. Mater. 23 1062

    [48]

    Wan H, Xie L Q, Wu X Z, Liu X C 2005 Acta Phys. Sin. 54 3872 (in Chinese) [万红, 谢立强, 吴学忠, 刘希从 2005 物理学报 54 3872]

    [49]

    He H C, Lin Y H, Nan C W 2008 Chin. Sci. Bull. 53 1136 (in Chinese) [何泓材, 林元华, 南策文 2008 科学通报 53 1136]

    [50]

    Zheng R K, Li X G 2013 Prog. Phys. 33 359 (in Chinese) [郑仁奎, 李晓光 2013 物理学进展 33 359]

    [51]

    He H C, Wang J, Zhou B P, Nan C W 2007 Adv. Funct. Mater. 17 1333

    [52]

    He H C, Zhou J P, Wang J, Nan C W 2006 Appl. Phys. Lett. 89 052904

    [53]

    Deng C Y, Zhang Y, Ma J, Lin Y H, Nan C W 2007 J. Appl. Phys. 102 074114

    [54]

    Zhou J P, He H C, Zhang Y, Deng C Y, Shi Z, Nan C W 2007 Appl. Phys. A: Mater. 89 553

    [55]

    Marauska S, Jahns R, Greve H, Quandt E, Knchel R, Wagner B 2012 J. Micromech. Microeng. 22 065024

    [56]

    Marauska S, Jahns R, Kirchhof C, Claus M, Quandt E, Knoechel R, Wagner B 2013 Sensor. Actuat. A: Phys. 189 321

    [57]

    Jahns R, Zabel S, Marauska S, Gojdka B, Wagner B, Knchel R, Adelung R, Faupel F 2014 Appl. Phys. Lett. 105 052414

    [58]

    Greve H, Woltermann E, Jahns R, Marauska S, Wagner B, Knoechel R, Wuttig M, Quandt E 2010 Appl. Phys. Lett. 97 152503

    [59]

    Lage E, Kirchhof C, Hrkac V, Kienle L, Jahns R, Knoechel R, Quandt E, Meyners D 2012 Nat. Mater. 11 523

    [60]

    Wang Y J, Li J F, Viehland D 2014 Mater. Today 17 269

    [61]

    Wang Y J, Gao J Q, Li M H, Shen Y, Hasanyan D, Li J F, Viehland D 2014 Philos. Trans. A: Math. Phys. Eng. Sci. 372 20120455

    [62]

    Palneedi H, Annapureddy V, Priya S, Ryu J 2016 Actuators 5 9

    [63]

    Chu Z, PourhosseiniAsl M, Dong S 2018 J. Phys. D: Appl. Phys. 51 243001

    [64]

    Gao J Q, Wang Y J, Li M H, Shen Y, Li J F, Viehland D 2012 Mater. Lett. 85 84

    [65]

    Wang Y J, Gray D, Berry D, Li M H, Gao J Q, Li J F, Viehland D 2012 J. Alloy. Compd. 513 242

    [66]

    Wang Y J, Gray D, Gao J Q, Berry D, Li M H, Li J F, Viehland D, Luo H S 2012 J. Alloy. Compd. 519 1

    [67]

    Das J, Gao J, Xing Z, Li J F, Viehland D 2009 Appl. Phys. Lett. 95 092501

    [68]

    Wang Y J, Gray D, Berry D, Li J F, Viehland D 2012 IEEE Trans. Ultrason. Ferr. 59 859

    [69]

    Gao J Q, Gray D, Shen Y, Li J F, Viehland D 2011 Appl. Phys. Lett. 99 153502

    [70]

    Wang Y J, Li M H, Hasanyan D, Gao J Q, Li J F, Viehland D 2012 Appl. Phys. Lett. 101 092905

    [71]

    Yang Y D, Gao J Q, Wang Z G, Li M H, Li J F, Das J, Viehland D 2011 Mater. Res. Bull. 46 266

    [72]

    Li M H, Wang Z G, Wang Y J, Li J F, Viehland D 2013 Appl. Phys. Lett. 102 082404

    [73]

    Luo H S, Jiao J, Li X B, Zhao X Y, Xu Q, Yue Q W 2014 Mod. Phys. 26 36 (in Chinese) [罗豪甦, 焦杰, 李晓兵, 赵祥永, 许晴, 岳晴雯 2014 现代物理知识 26 36]

    [74]

    Li M H, Gao J Q, Wang Y J, Gray D, Li J F, Viehland D 2012 J. Appl. Phys. 111 104504

    [75]

    Xing Z P, Zhai J Y, Gao J Q, Li J F, Viehland D 2009 IEEE Electr. Device Lett. 30 445

    [76]

    Zhuang X, Sing M L C, Cordier C, Saez S, Dolabdjian C, Shen L, Li J F, Li M, Viehland D 2011 IEEE Sens. J. 11 2266

    [77]

    Jahns R, Greve H, Woltermann E, Quandt E, Knchel R 2012 Sensor. Actuat. A: Phys. 183 16

    [78]

    Liu Y T, Jiao J, Ma J S, Ren B, Li L Y, Zhao X Y, Luo H S, Shi L 2013 Appl. Phys. Lett. 103 212902

    [79]

    Salzer S, Hft M, Knchel R, Hayes P, Yarar E, Piorra A, Quandt E 2015 Proc. Eng. 120 940

    [80]

    Hayes P, Salzer S, Reermann J, Yarar E, Rbisch V, Piorra A, Meyners D, Hft M, Knchel R, Schmidt G, Quandt E 2016 Appl. Phys. Lett. 108 182902

    [81]

    Zhuang X, Lam Chok Sing M, Dolabdjian C 2013 IEEE Trans. Magn. 49 120

    [82]

    Dong S X, Zhai J Y, Li J F, Viehland D 2006 Appl. Phys. Lett. 88 082907

    [83]

    Nan T X, Hui Y, Rinaldi M, Sun N X 2013 Sci. Rep. 3 1985

    [84]

    Li M H, Matyushov A, Dong C Z, Chen H H, Lin H, Nan T X, Qian Z Y, Rinaldi M, Lin Y H, Sun N X 2017 Appl. Phys. Lett. 110 143510

    [85]

    Chu Z, Shi H, PourhosseiniAsl M J, Wu J, Shi W, Gao X, Yuan X, Dong S 2017 Sci. Rep. 7 8592

    [86]

    Ryu J, Kang J E, Zhou Y, Choi S Y, Yoon W H, Park D S, Choi J J, Hahn B D, Ahn C W, Kim J W, Kim Y D, Priya S, Lee S Y, Jeong S, Jeong D Y 2015 Energ. Environ. Sci. 8 2402

    [87]

    Annapureddy V, Na S M, Hwang G T, Kang M G, Sriramdas R, Palneedi H, Yoon W H, Hahn B D, Kim J W, Ahn C W, Park D S, Choi J J, Jeong D Y, Flatau A B, Peddigari M, Priya S, Kim K H, Ryu J 2018 Energ. Environ. Sci. 11 818

    [88]

    Yao Z, Wang Y E, Keller S, Carman G P 2015 IEEE Trans. Antenn. Propag. 63 3335

    [89]

    Domann J P, Carman G P 2017 J. Appl. Phys. 121 044905

    [90]

    Nan T, Lin H, Gao Y, Matyushov A, Yu G, Chen H, Sun N, Wei S, Wang Z, Li M, Wang X, Belkessam A, Guo R, Chen B, Zhou J, Qian Z, Hui Y, Rinaldi M, McConney M E, Howe B M, Hu Z, Jones J G, Brown G J, Sun N X 2017 Nat. Commun. 8 296

    [91]

    Shen J X, Shang D S, Chai Y S, Wang Y, Cong J Z, Shen S P, Yan L Q, Wang W H, Sun Y 2016 Phys. Rev. Appl. 6 064028

    [92]

    Nan C W 2015 Sci. Sin. Technol. 45 339 (in Chinese) [南策文 2015 中国科学: 技术科学 45 339]

    [93]

    Palneedi H, Yeo H G, Hwang G T, Annapureddy V, Kim J W, Choi J J, Trolier McKinstry S, Ryu J 2017 APL Mater. 5 096111

    [94]

    Zong Y, Zheng T, Martins P, Lanceros Mendez S, Yue Z, Higgins M J 2017 Nat. Commun. 8 38

  • [1] Xie Bing-Hong, Xu Guo-Kai, Xiao Shao-Qiu, Yu Zhong-Jun, Zhu Da-Li. Resonance magnetoelectric effect analysis and output power optimization of nonlinear magnetoelectric transducer model. Acta Physica Sinica, 2023, 72(11): 117501. doi: 10.7498/aps.72.20222277
    [2] Nie Chang-Wen, Wu Han-Zhou, Wang Shu-Hao, Cai Yuan-Yuan, Song Shu, Sokolov Oleg, Bichurin M. I., Wang Yao-Jin. Theoretical model and tunability optimization of magnetoelectric voltage tunable inductor. Acta Physica Sinica, 2021, 70(24): 247501. doi: 10.7498/aps.70.20210899
    [3] Zhou Yong, Li Chun-Jian, Pan Yu-Rong. Magnetoelectric effect analysis of magnetostrictive/piezoelectric laminated composites. Acta Physica Sinica, 2018, 67(7): 077702. doi: 10.7498/aps.67.20172307
    [4] Lou Guo-Feng, Yu Xin-Jie, Lu Shi-Hua. Equivalent circuit model for plate-type magnetoelectric laminate composite considering an interface coupling factor. Acta Physica Sinica, 2018, 67(2): 027501. doi: 10.7498/aps.67.20172080
    [5] Yu Bin, Hu Zhong-Qiang, Cheng Yu-Xin, Peng Bin, Zhou Zi-Yao, Liu Ming. Recent progress of multiferroic magnetoelectric devices. Acta Physica Sinica, 2018, 67(15): 157507. doi: 10.7498/aps.67.20180857
    [6] Shi Zhan, Chen Lai-Zhu, Tong Yong-Shuai, Zheng Zhi-Bin, Yang Shui-Yuan, Wang Cui-Ping, Liu Xing-Jun. Phase drift of magnetoelectric effect in Terfenol-D/PZT composite materials. Acta Physica Sinica, 2013, 62(1): 017501. doi: 10.7498/aps.62.017501
    [7] Li Ping, Huang Xian, Wen Yu Mei. Effect of adjustable bias voltage on magnetoelectric properties of magnetostrictive/piezoelectric laminated transducer structure. Acta Physica Sinica, 2012, 61(13): 137504. doi: 10.7498/aps.61.137504
    [8] Li Ting-Xian, Zhang Ming, Wang Guang-Ming, Guo Hong-Rui, Li Kuo-She, Yan Hui. Preparation and electric field driven magnetoelectric effect for multiferroic La2/3Sr1/3MnO3/BaTiO3 composite films. Acta Physica Sinica, 2011, 60(8): 087501. doi: 10.7498/aps.60.087501
    [9] Bi Ke, Ai Qian-Wei, Yang Lu, Wu Wei, Wang Yin-Gang. Study on resonance magnetoelectric effect of layeredNi/Pb(Zr,Ti)O3/TbFe2 composites. Acta Physica Sinica, 2011, 60(5): 057503. doi: 10.7498/aps.60.057503
    [10] Chen Lei, Li Ping, Wen Yu-Mei, Wang Dong. Effect of High-permeability FeCuNbSiB on magnetoelectric property of magnetostrictive/piezoelectric composite. Acta Physica Sinica, 2011, 60(6): 067501. doi: 10.7498/aps.60.067501
    [11] Luo Ying, Bao Bing-Hao. Theoretical and experimental study on magnetoelectric effect in laminated composites of magnetostrictive and piezoelectric materials with finite input impedance. Acta Physica Sinica, 2011, 60(1): 017508. doi: 10.7498/aps.60.017508
    [12] Luo Ying, Bao Bing-Hao. Theory and calculation of magnetoelectric effect in longitudinally polarized and magnetized laminate materials. Acta Physica Sinica, 2011, 60(6): 067504. doi: 10.7498/aps.60.067504
    [13] Ma Jing, Shi Zhan, Lin Yuan-Hua, Nan Ce-Wen. Magnetoelectric properties of multiferroic composites with pseudo 2-2 type multilayered structure. Acta Physica Sinica, 2009, 58(8): 5852-5856. doi: 10.7498/aps.58.5852
    [14] Cao Hong-Xia, Zhang Ning. Elastomechanical study of interface coupling in magnetoelectric bilayers. Acta Physica Sinica, 2008, 57(5): 3237-3243. doi: 10.7498/aps.57.3237
    [15] Cao Hong-Xia, Zhang Ning. Magnetoelectric effect in transition-metal-doped BaTiO3-Tb1-xDyxFe2-y bilayer. Acta Physica Sinica, 2008, 57(10): 6582-6586. doi: 10.7498/aps.57.6582
    [16] Yang Chang-Hai, Wen Yu-Mei, Li Ping, Bian Lei-Xiang. Influence of bias magnetic field on magnetoelectric effect of magnetostrictive/elastic/piezoelectric laminated composite. Acta Physica Sinica, 2008, 57(11): 7292-7297. doi: 10.7498/aps.57.7292
    [17] Yang Fan, Wen Yu-Mei, Li Ping, Zheng Min, Bian Lei-Xiang. The resonant magnetoelectric response of magnetostrictive/piezoelectric laminated composite under the consideration of losses. Acta Physica Sinica, 2007, 56(6): 3539-3545. doi: 10.7498/aps.56.3539
    [18] Zhou Jian-Ping, Shi Zhan, Liu Gang, He Hong-Cai, Nan Ce-Wen. Analysis of magnetoelectric properties of ferroelectric and ferromagnetic columnar composites. Acta Physica Sinica, 2006, 55(7): 3766-3771. doi: 10.7498/aps.55.3766
    [19] Wan Hong, Xie Li-Qiang, Wu Xue-Zhong, Liu Xi-Cong. Magnetoelectric effect of the TbDyFe/PZT laminated composite. Acta Physica Sinica, 2005, 54(8): 3872-3877. doi: 10.7498/aps.54.3872
    [20] Wan Hong, Shen Ren-Fa, Wu Xue-Zhong. A theoretical study on symmetrical magnetostrictive/piezoelectric laminated composite. Acta Physica Sinica, 2005, 54(3): 1426-1430. doi: 10.7498/aps.54.1426
Metrics
  • Abstract views:  7963
  • PDF Downloads:  585
  • Cited By: 0
Publishing process
  • Received Date:  30 April 2018
  • Accepted Date:  01 June 2018
  • Published Online:  05 August 2018

/

返回文章
返回