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Magnetoelectric heterostructure and device application

Yang Na-Na Chen Xuan Wang Yao-Jin

Magnetoelectric heterostructure and device application

Yang Na-Na, Chen Xuan, Wang Yao-Jin
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  • The magnetoelectric (ME) heterostructure is composed of ferromagnetic and ferroelectric materials. The heterostructural ME effect originates from piezoelectric effect in the ferroelectric component and magnetostrictive effect in the ferromagnetic component. The magnetoelectric heterostructure has higher magnetoelectric coupling coefficient and lower dielectric loss than the particulate composites, and thus leading to several promising applications such as in the magnetic field sensors, the energy harvesters, antenna and memory devices. In this paper, we review the recent research progress in ME heterostructure for device applications, and present a development course of ME heterostructure. Finally, we also summarize the challenges of developing the ME heterostructure and point out its perspectives.
      Corresponding author: Wang Yao-Jin, yjwang@njust.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51602156, 51790492), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20160824), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 30916011104, 30916011208).
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    [3]

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    [4]

    Yu P, Zhang J X 2013 Prog. Phys. 33 369 (in Chinese) [于浦, 张金星 2013 物理学进展 33 369]

    [5]

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    [6]

    Jin J Z, Lu S G, Chanthad C, Zhang Q M, Hague M A, Wang Q 2011 Adv. Mater. 23 3853

    [7]

    van Run A M J G, Terrell D R, Scholing J H 1974 J. Mater. Sci. 9 1710

    [8]

    Benveniste Y 1995 Phys. Rev. B 51 16424

    [9]

    Nan C W 1994 Phys. Rev. B 50 6082

    [10]

    Srinivasan G, Rasmussen E T, Gallegos J, Srinivasan R, Bokhan Y I, Laletin V M 2001 Phys. Rev. B 64 214408

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    Zhou J P, Shi Z, Liu G, He H C, Nan C W 2006 Acta Phys. Sin. 55 3766 (in Chinese) [周剑平, 施展, 刘刚, 何泓材, 南策文 2006 物理学报 55 3766]

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    [13]

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    [14]

    Ryu J, Carazo A V, Uchino K, Kim H E 2001 Jpn. J. Appl. Phys. Part 1 40 4948

    [15]

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    [16]

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  • Received Date:  30 April 2018
  • Accepted Date:  01 June 2018
  • Published Online:  05 August 2018

Magnetoelectric heterostructure and device application

    Corresponding author: Wang Yao-Jin, yjwang@njust.edu.cn
  • 1. School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 51602156, 51790492), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20160824), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 30916011104, 30916011208).

Abstract: The magnetoelectric (ME) heterostructure is composed of ferromagnetic and ferroelectric materials. The heterostructural ME effect originates from piezoelectric effect in the ferroelectric component and magnetostrictive effect in the ferromagnetic component. The magnetoelectric heterostructure has higher magnetoelectric coupling coefficient and lower dielectric loss than the particulate composites, and thus leading to several promising applications such as in the magnetic field sensors, the energy harvesters, antenna and memory devices. In this paper, we review the recent research progress in ME heterostructure for device applications, and present a development course of ME heterostructure. Finally, we also summarize the challenges of developing the ME heterostructure and point out its perspectives.

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