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Owing to the high bandgap of up to 4.8 eV, Ga2O3 has a natural advantage in the field of deep-ultraviolet (DUV) detection. The Ga2O3-based photoconductors, Schottky and heterojunction detectors are proposed and show excellent photodetection performance. The Ga2O3 heterojunction detectors are self-driven and feature low power consumption. On the other hand, considering the ultra-wide bandgap and low intrinsic carrier concentration, Ga2O3-based photodetectors are exhibiting important applications in high-temperature photodetection. In this work, a WO3/β-Ga2O3 heterojunction DUV photodetector is constructed and the effect of high temperature on its detection performance is investigated. The β-Ga2O3 films are prepared by metal-organic chemical vapor deposition (MOCVD), and WO3 films and Ti/Au ohmic electrodes are prepared by spin-coating technology and magnetron sputtering technique, respectively. The current-voltage (I-V) and current-time (I-t) measurements are performed at different ambient temperatures. Parameters including light-dark-current ratio (PDCR), responsivity (R), detectivity (D*), and external quantum efficiency (EQE) are extracted to evaluate the deep-ultraviolet detection performance and its high-temperature stability. At room temperature (300 K), the PDCR, the R, the D*, and the EQE of the detector are 3.05×106, 2.7 mA/W, 1.51×1013 Jones, and 1.32%, respectively. As the temperature increases, the dark current of the device increases and the photocurrent decreases, resulting in the degradation of the photodetection performance. To explore the physical mechanism behind the degradation of the detection performance, the effect of temperature on the carrier generation-combination process is investigated. It is found that the Shockley-Read-Hall (SRH) generation-combination mechanism is enhanced with the increase of temperature. Recombination centers are introduced from the crystal defects and interfacial defects, which originate mainly from the SRH process. Specifically, the dark current comes mainly from the depletion region of WO3/β-Ga2O3, and the carrier generation rate in the depletion region is enhanced with temperature increasing, which leads to the rise of dark current. Similarly, the increase of temperature leads to the improvement of the recombination process, therefore the photocurrent decreases at a higher temperature. This effect can also well explain the variation of response time at a high temperature. Overall, it is exhibited that the WO3/β-Ga2O3 heterojunction photodetector can achieve stable self-powered operation even at an ambient temperature of 450 K, indicating that the all-oxide heterojunction detector has potential applications in harsh detection environments.
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Keywords:
- β-Ga2O3 /
- WO3 /
- deep ultraviolet detection /
- high-temperature
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图 1 (a) WO3/β-Ga2O3异质结光电探测器结构示意图; (b) WO3表面的SEM图; (c) WO3表面XPS图; (d), (e) W 4f5/2, W 4f7/2和O 1s的结合能
Figure 1. (a) Schematic diagram of WO3/β-Ga2O3 heterojunction PD; (b) SEM image of the WO3 surface; (c) XPS spectrum of the WO3 thin film; (d), (e) binding energies for W 4f5/2, W 4f7/2 and O 1s, respectively.
图 2 (a) β-Ga2O3薄膜的吸收光谱; (b) WO3薄膜的吸收光谱; (c) WO3/β-Ga2O3异质结光电探测器的响应度光谱
Figure 2. (a) UV-vis absorbance spectrum of the β-Ga2O3 film; (b) UV-vis absorbance spectrum of the WO3 film; (c) spectrem responsivity of the WO3/β-Ga2O3 photodetector.
图 3 (a) 黑暗下的I-V特性; (b) 光照下的I-V特性; (c) WO3/β-Ga2O3异质结能带结构
Figure 3. (a) I-V characteristics in the dark; (b) I-V characteristics under illuminations; (c) band structure of WO3/β-Ga2O3 heterojunction.
图 4 不同温度下WO3/β-Ga2O3异质结光电探测器的性能 (a)光电流和暗电流; (b)光暗电流比; (c)响应度; (d) 外量子效率
Figure 4. WO3/β-Ga2O3 heterojunction photodetector at different temperatures: (a) Photocurrent and dark current; (b) photo-to-dark current ratio; (c) responsivity; (d) external quantum efficiency.
图 5 (a)—(g) WO3/β-Ga2O3异质结光电探测器在不同温度下的I-t特性曲线; (h) 上升与下降时间随温度的变化
Figure 5. (a)–(g) I-t curves of the WO3/β-Ga2O3 heterojunction PD with various temperatures; (h) variation of rise and fall times with temperature.
表 1 不同Ga2O3异质结光电探测器性能比较
Table 1. Comparison of performance for several Ga2O3 heterojunction photodetectors.
PD Self-powered UV light/nm PDCR R/(mA·W–1) D/Jones Ref. MoS2/β-Ga2O3 Yes 245 ~1.3×104 2.1 1.21×1011 [14] ZnO/β-Ga2O3 Yes 251 ~1.0×104 9.7 6.29×1012 [51] Diamond/β-Ga2O3 Yes 244 37.0 0.2 6.99×109 [52] CuI/β-Ga2O3 Yes 254 4.0×103 8.5 6.30×1012 [53] 4H-SiC/β-Ga2O3 Yes 254 1.7×103 10.4 8.80×109 [54] NiO/Ga2O3 Yes 254 ~1.0×102 0.3 1.81×108 [55] CuCrO2/Ga2O3 Yes 254 3.5×104 0.1 4.70×1011 [56] WO3/β-Ga2O3 Yes 254 3.5×106 2.7 1.51×1013 本文 
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[1] Xu J J, Zheng W, Huang F 2019 J. Mater. Chem. C 7 8753
Google Scholar
[2] Shepelev V A, Altukhov A A, Gladchenkov E V, Popov A V, Teplova T B, Feshchenko V S, Zhukov A O 2017 Russ. Eng. Res. 37 273
Google Scholar
[3] Zhao B, Wang F, Chen H Y, Wang Y P, Jiang M M, Fang X S, Zhao D X 2015 Nano Lett. 15 3988
Google Scholar
[4] Guo D Y, Guo Q X, Chen Z W, Wu Z P, Li P G, Tang W H 2019 Mater. Today Phys. 11 100157
Google Scholar
[5] Song D Y, Li L, Li B S, Sui Y, Shen A D 2016 AIP Adv. 6 065016
Google Scholar
[6] Xue H W, He Q M, Jian G Z, Long S B, Pang T, Liu M 2018 Nanoscale Res. Lett. 13 290
Google Scholar
[7] Guo D Y, Wu Z P, An Y H, Guo X C, Chu X L, Sun C L, Li L H, Li P G, Tang W H 2014 Appl. Phys. Lett. 105 023507
Google Scholar
[8] Monroy E, Omnès F, Calle F 2003 Semicond. Sci. Technol. 18 R33
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[9] Wang S L, Chen K, Zhao H L, He C R, Wu C, Guo D Y, Zhao N, Ungar G, Shen J Q, Chu X L, Li P G, Tang W H 2019 RSC Adv. 9 6064
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[10] Jaiswal P, Muazzam UI U, Pratiyush A S, Mohan N, Raghavan S, Muralidharan R, Shivashankar S A, Nath D N 2018 Appl. Phys. Lett. 112 021105
Google Scholar
[11] Pratiyush A S, Krishnamoorthy S, Solanke S V, Xia Z, Muralidharan R, Rajan S, Nath D N 2017 Appl. Phys. Lett. 110 221107
Google Scholar
[12] Ruan M M, Song L X, Yang Z, Teng Y, Wang Q S, Wang Y Q 2017 J. Mater. Chem. C 5 7161
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
[58] Zhang M L, Ma W Y, Li S, Yang L L, Liu Z, Guo Y F, Tang W H 2023 IEEE Trans. Electron Devices 70 2336
Google Scholar
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