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UV photodetectors have the advantages of high sensitivity and fast response speed. As an ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) plays an extremely important role in the field of deep ultraviolet detection. It can form a typical type II heterostructure with GaSe, which promotes carrier separation and transport. In this paper, Ga2O3 epitaxial films were grown on sapphire substrates by plasma-assisted chemical vapor deposition (PECVD). GaSe films and GaSe/β-Ga2O3 heterojunction photodetectors were grown on gallium oxide films by Bridgeman technology. The detector has a good response to deep ultraviolet light, the dark current of the device is only 1.83 pA at 8 V, and the photocurrent reaches 6.5 nA at 254 nm. the UVC/Visible (254 nm/600 nm) has a high rejection ratio of about 354. Although at very small light intensities, the responsivity and detection reach 1.49 mA/W and 6.65× 1011 Jones. At the same time, due to the photovoltaic effect formed by the space charge region at the junction interface, the detector exhibits self-power supply performance at zero bias voltage, and the open-circuit voltage is 0.2 V. In addition, the detector has a very good sensitivity, whether it is irradiated with different light intensities under the condition of constant voltage, or changing the voltage under the condition of constant light intensity, the device can respond quickly. It can respond within milliseconds under a bias voltage of 10V. This paper demonstrates the enormous potential of heterojunctions in photoelectric detection by analyzing the photophysical and interface physical issues involved in heterojunction photodectectors, and provides a possibility for the deep ultraviolet detection of gallium oxide.
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Keywords:
- photoelectric detector /
- Ga2O3 /
- GaSe /
- Self-power
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[1] Xi Z Y, Liu Z, Yang L L, Tang K, Li L, Shen G H, Zhang M L, Li S, Guo Y F, Tang W H. 2023, ACS Appl. Mater. Interfaces 15 40744.
[2] Lee S H, Kim S B, Moon Y-J, Kim S M, Jung H J, Seo M S, Lee K M, Kim S-K, Lee S W. 2017, ACS Photon. 4 2937.
[3] Tang X, Li K H, Zhao Y, Sui Y, Liang H, Liu Z, Liao C H, Babatain W, Lin R, Wang C, Lu Y, Alqatari F S, Mei Z, Tang W, Li X. 2021, ACS Appl. Mater. Interfaces 14 1304.
[4] Wang Y H, Yang Z, Li H, Li S, Zhi Y, Yan Z, Huang X, Wei X, Tang W H, Wu Z. 2020, ACS Appl. Mater. Interfaces 12 47714.
[5] Imura S, Mineo K, Miyakawa K, Nanba M, Ohtake H, Kubota M. 2018, IEEE Sensors J. 18 3108.
[6] Sorifi S, Kaushik S, Sheoran H, Singh R. 2022, J. Phys. D: Appl. Phys. 55 365105.
[7] Chen Y, Lu Y, Liao M, Tian Y, Liu Q, Gao C, Yang X, Shan C. 2019, Adv. Funct. Mater. 29 1906040.
[8] Zhao B, Wang F, Chen H, Zheng L, Su L, Zhao D, Fang X. 2017, Adv. Funct. Mater. 27 1700264.
[9] Ozbay E, Biyikli N, Kimukin I, Kartaloglu T, Tut T, Aytur O. 2004, IEEE J. Select. Topics Quantum Electron. 10 742.
[10] Xu Z, Zang J, Yang X, Chen Y, Lou Q, Li K, Lin C, Zhang Z, Shan C. 2021, Semicond. Sci. Technol. 36 065007.
[11] Liu Z, Li S, Yan Z, Liu Y, Zhi Y, Wang X, Wu Z, Li P, Tang W. 2020, J. Mater. Chem. C 8 5071.
[12] Li L, Liao F, Hu X. 2020, Superlattices Microstruct. 141 106502.
[13] Jing L, Ai C, Guo X, Cao J, Jing D, Luo B, Ma L. 2023, Ind .Eng. Chem. Res. 62 6103.
[14] Moon S, Bae J, Kim J. 2022, J.Mater. Chem.C 10 6281.
[15] Lu C, Gao L, Meng F, Zhang Q, Yang L, Liu Z, Zhu M, Chen X, Lyu X, Wang Y, Liu J, Ji A, Li P, Gu L, Cao Z, Lu N. 2023, J. Appl. Phys. 133 045306.
[16] Han Y, Jiao S, Jing J, Chen L, Rong P, Ren S, Wang D, Gao S, Wang J. 2023, Nano Res. 17 2960.
[17] Li X, Dong J, Idrobo J C, Puretzky A A, Rouleau C M, Geohegan D B, Ding F, Xiao K. 2016, J. Am. Chem. Soc. 139 482.
[18] Qasrawi A F. 2005, Cryst. Res. Technol. 40 610.
[19] Lei S, Ge L, Liu Z, Najmaei S, Shi G, You G, Lou J, Vajtai R, Ajayan P M. 2013, Nano Lett. 13 2777.
[20] Yuan X, Tang L, Liu S, Wang P, Chen Z, Zhang C, Liu Y, Wang W, Zou Y, Liu C, Guo N, Zou J, Zhou P, Hu W, Xiu F. 2015, Nano Lett. 15 3571.
[21] Ben Aziza Z, Henck H, Pierucci D, Silly M G, Lhuillier E, Patriarche G, Sirotti F, Eddrief M, Ouerghi A. 2016, ACS Nano, 10 9679.
[22] M.Parlak, A.F.Qasrawi, C.Ercelebi. 2003, Mater. Sci. 38 1507.
[23] Yan Z, Li S, Liu Z, Zhi Y, Dai J, Sun X, Sun S, Guo D, Wang X, Li P, Wu Z, Li L, Tang W. 2020, J.Mater. Chem. C 8 4502.
[24] Mudiyanselage D H, Wang D, Fu H. 2022, IEEE J. Electron Devices Soc. 10 89.
[25] Lin R, Zheng W, Zhang D, Zhang Z, Liao Q, Yang L, Huang F. 2018, ACS Appl.Mater. Interfaces 10 22419.
[26] Abdullah M M, Bhagavannarayana G, Wahab M A. 2010, J.Cryst. Growth 312 1534.
[27] Jubu P R, Yam F K, Igba V M, Beh K P. 2020, J. Solid State Chem. 290 121576.
[28] Zhang M L, Ma W Y, Wang L, Liu Z, Yang L L, Li S, Tang W H, Guo Y F. 2023, Acta Phys. Sin. 72 160201 (in Chinese) [张茂林，马万煜，王磊，刘增，杨莉莉，李山，唐为华，郭宇锋 2023 物理学报 72 160201].
[29] Li Z, Xu Y, Zhang J, Cheng Y, Chen D, Feng Q, Xu S, Zhang Y, Zhang J, Hao Y, Zhang C. 2019, IEEE Photon. J. 11 1.
[30] He T, Li C, Zhang X, Ma Y, Cao X, Shi X, Sun C, Li J, Song L, Zeng C, Zhang K, Zhang X, Zhang B. 2019, Phys. Status Solidi. (a) 217 1900861.
[31] Yakimov E B, Polyakov A Y, Shchemerov I V, Smirnov N B, Vasilev A A, Vergeles P S, Yakimov E E, Chernykh A V, Shikoh A S, Ren F, Pearton S J. 2020, APL Mater. 8 111105.
[32] Bae J, Park J-H, Jeon D-W, Kim J. 2021, APL Mater. 9 101108.
[33] Qian L X, Liu H Y, Zhang H F, Wu Z H, Zhang W L. 2019, Appl. Phys. Lett. 114 113506.
[34] Chen M, Zhang Z, Lv Z, Zhan R, Chen H, Jiang H, Chen J. 2022, ACS Appl. Nano Mater. 5 351.
[35] Ricci F, Boschi F, Baraldi A, Filippetti A, Higashiwaki M, Kuramata A, Fiorentini V, Fornari R. 2016, J. Phys.: Condens. Matter, 28 224005.
[36] Filippo E, Tepore M, Baldassarre F, Siciliano T, Micocci G, Quarta G, Calcagnile L, Tepore A. 2015, Appl. Surf. Sci. 338 69.
[37] Kong W Y, Wu G A, Wang K Y, Zhang T F, Zou Y F, Wang D D, Luo L B. 2016, Adv. Mater. 28 10725.
[38] Liang S J, Cheng B, Cui X, Miao F. 2019, Adv. Mater. 32 1903800.
[39] Kumar N, Kumail M, Lee J, Park H G, Kim J. 2023, Mater. Res. Bulletin 168 112466.
[40] Zhuo R, Wu D, Wang Y, Wu E, Jia C, Shi Z, Xu T, Tian Y, Li X. 2018, J. Mater. Chem. C 6 10982.
[41] Ma Y, Chen T, Zhang X, Tang W, Feng B, Hu Y, Zhang L, Zhou X, Wei X, Xu K, Mudiyanselage D, Fu H, Zhang B. 2022, ACS Appl. Mater. Interfaces 14 35194.
[42] Tan P, Zhao X, Hou X, Yu Y, Yu S, Ma X, Zhang Z, Ding M, Xu G, Hu Q, Gao N, Sun H, Mu W, Jia Z, Tao X, Long S. 2021, Adv. Opt. Mater. 9 2100173.
[43] Park S, Park T, Park J H, Min J Y, Jung Y, Kyoung S, Kang T Y, Kim K H, Rim Y S, Hong J. 2022, ACS Appl. Mater. Interfaces 14 25648.
[44] Wu C, Qiu L, Li S, Guo D, Li P, Wang S, Du P, Chen Z, Liu A, Wang X, Wu H, Wu F, Tang W. 2021, Mater. Today Phys. 17 100335.
[45] Nguyen T M H, Tran M H, Bark C W. 2023, ACS Appl. Electronic Mater. 5 6459.
[46] Wang Y, Tang Y, Li H, Yang Z, Zhang Q, He Z, Huang X, Wei X, Tang W, Huang W, Wu Z. 2021, ACS Photon. 8 2256.
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