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金属-半导体-金属(MSM)型氧化镓薄膜探测器的性能高度依赖于氧化镓薄膜的均匀性，工艺难度较高，对规模化、量产化薄膜探测器提出了挑战。本文首次在量产化悬臂式薄膜芯片表面物理沉积氧化镓薄膜，实现了一个五对叉指电极结构的MSM型氧化镓薄膜日盲探测器。得益于微机电系统(MEMS)工艺制备的悬臂式电极结构保护了内部电路与探测薄膜的完整均匀性，所获得的氧化镓薄膜虽然是非晶结构，但探测器仍然具备良好的紫外探测性能。在18 V偏压下其探测率达到7.9×1010 Jones，外量子效率达到1779%，上升和下降时间分别为1.22 s和0.24 s，接近晶体氧化镓薄膜的探测性能。该探测器在无任何光学聚焦系统的情况下，实现了对户外日光环境下脉冲电弧的灵敏检测，将在日盲探测领域具有良好的潜在应用价值。本工作基于MEMS工艺的悬臂式电极结构开发的敏感功能薄膜沉积技术，避免了功能薄膜大面积均匀性对刻蚀电路的影响，为MSM型薄膜探测器的制备提供了新的技术方法和工艺路线。The performance of gallium oxide (Ga2O3) thin film detectors based on Metal-Semiconductor-Metal (MSM) is highly dependent on the uniformity of the Ga2O3 thin film, and the manufacturing process is quite sophisticated, which poses a challenge for the scale-up and mass production of thin film photodetectors. In this work, an MSM Ga2O3 thin film solar-blind photodetector with five-finger interdigital electrodes is fabricated by physically depositing Ga2O3 thin film on the surface of a mass-produced cantilevered thin film chip for the first time. The microelectromechanical system (MEMS) process prepares the cantilever electrode structure, which protects the internal circuit and the integrity of the thin film. The Ga2O3 thin film treated by argon plasma at a low temperature is amorphous, but the photodetector still possesses considerable ultraviolet detection performance. At a bias voltage of 18 V, it approaches the detection performance of crystalline Ga2O3 thin film, with a detectivity of 7.9×1010 Jones, an external quantum efficiency of 1779%, rise time and decay time of 1.22 s and 0.24 s, respectively. Moreover, a system of arc detection is built in outdoor environments, as shown in FIG. 1 (a). Without any optical focusing system, this photodetector achieves sensitive detection of pulsed arcs in an outdoor sunlight environment. For pulsed arcs with an output voltage of 100 kV, the photodetector is capable of sensitive detection at a distance of 25 cm, as depicted in FIG. 1 (b). Besides, the maximum detection distance of 155 cm indicates that the photodetector will have a favorable potential application value in the field of solar-blind detection. This work develops a sensitive functional thin film deposition technology based on the cantilever electrode structure fabricated by the MEMS process, which avoids the influence of the large-area uniformity of the functional thin film on the etching circuit. It provides a new technical approach and process route for the preparation of MSM photodetectors.
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Keywords:
- Gallium oxide /
- solar-blind photodetector /
- arc detection
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