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Analysis of diluted magnetic semiconductor GaMnN grown by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition

Wu Dong-Jiang Wang Ye-An Qin Fu-Wen Wu Ai-Min Xu Yin Gu Biao

Analysis of diluted magnetic semiconductor GaMnN grown by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition

Wu Dong-Jiang, Wang Ye-An, Qin Fu-Wen, Wu Ai-Min, Xu Yin, Gu Biao
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  • Received Date:  01 December 2006
  • Accepted Date:  01 June 2007
  • Published Online:  15 January 2008

Analysis of diluted magnetic semiconductor GaMnN grown by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition

  • 1. (1)大连理工大学机械工程学院,大连 116024; (2)大连理工大学三束材料改性国家重点实验室,大连 116024

Abstract: Diluted magnetic semiconductor film GaMnN was grown on sapphire (α-Al2O3) substrate using biscyclopentyldienyl manganese (Cp2Mn), N2 and TEGa by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition(ECR-PEMOCVD) . The crystal structure and surface topography of the GaMnN films were characterized by RHEED, XRD and AFM. GaMnN films exhibit good (0002) preferred orientation, showing the films are inclined to c-axis growth and retain good wurtzite structure. The surface topography of GaMnN film is composed of many submicron grains piled in the consistent orientation. The magnetism of films is characterized by SQUID. SQUID shows that the film is ferromagnetic, which comes probably only from the ternary phase GaMnN and the Curie temperature of GaMnN film is higher than 350 K. Moreover, higher Mn concentration can enhance the Curie temperature of the film.

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