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Ag doped p-type ZnO films and its optical and electrical properties

Wang Jing-Wei Bian Ji-Ming Sun Jing-Chang Liang Hong-Wei Zhao Jian-Ze Du Guo-Tong

Ag doped p-type ZnO films and its optical and electrical properties

Wang Jing-Wei, Bian Ji-Ming, Sun Jing-Chang, Liang Hong-Wei, Zhao Jian-Ze, Du Guo-Tong
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  • Abstract views:  4278
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  • Received Date:  14 December 2007
  • Accepted Date:  27 February 2008
  • Published Online:  20 August 2008

Ag doped p-type ZnO films and its optical and electrical properties

  • 1. 大连理工大学物理与光电工程学院,三束材料改性国家重点实验室,大连 116024

Abstract: Ag doped ZnO films (ZnO:Ag) were deposited on quartz glass substrates by ultrasonic spray pyrolysis technology. Zn(CH3COO)2 and Ag(NO3)3 aqueous solution were used as the sources of Zn and Ag, respectively. The effect of substrate temperature on structural, electrical and optical properties of ZnO:Ag films were studied using X-ray diffraction, Hall effect measurement, photoluminescence spectra, and transmittance spectra measurement. All the measurements were performed at room temperature. It is found that the electrical and optical properties of the obtained ZnO:Ag thin films change dramatically due to Ag doping. The Ag doped p-type ZnO films with hole carrier concentration of 5.295×1015cm-3 and Hall mobility of 6.61cm2·V-1s-1 at room temperature have been successfully obtained at optimal conditions. In photoluminescence measurements, a strong ultraviolet emission centered at 379nm and a relatively weak green emission band were observed, and in transmittance measurements, a high transmittance of~70% in the visible region and a sharp absorption edge at 375nm were observed for all samples.

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