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A high-voltage and high-current photoconductive semiconductor switch and its breakdown characteristics

Shi Wei Tian Li-Qiang Wang Xin-Mei Xu Ming Ma De-Ming Zhou Liang-Ji Liu Hong-Wei Xie Wei-Ping

A high-voltage and high-current photoconductive semiconductor switch and its breakdown characteristics

Shi Wei, Tian Li-Qiang, Wang Xin-Mei, Xu Ming, Ma De-Ming, Zhou Liang-Ji, Liu Hong-Wei, Xie Wei-Ping
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  • Abstract views:  3300
  • PDF Downloads:  982
  • Cited By: 0
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  • Received Date:  23 February 2008
  • Accepted Date:  05 August 2008
  • Published Online:  20 February 2009

A high-voltage and high-current photoconductive semiconductor switch and its breakdown characteristics

  • 1. (1)西安理工大学理学院应用物理系,西安 710048; (2)中国工程物理研究院流体物理研究所,绵阳 621900

Abstract: Semi-insulating GaAs photoconductive semiconductor switch (PCSS) with withstand voltage of 32 kV and peak current of 3.7 kA has been developed. The breakdown mechanism of the PCSS is analyzed. It is shown that the breakdown of PCSS fabricated from indirect band-gap semiconductors is determined mainly by limited conduction of trap filling, but for PCSS's fabricated from materials that exhibit the transferred-electron effect, such as GaAs, breakdown of the PCSS is caused mainly by the negative-resistance-induced electric field enhancement at the anode boundary. Based on the Gunn effect electronics, the breakdown voltage of the semi-insulating GaAs PCSS is calculated, and the calculated results agree with the experimental results.

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