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Study of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage

Yuan Guang-Cai Xu Zheng Zhao Su-Ling Zhang Fu-Jun Sun Qin-Jun Xu Xu-Rong Xu Na

Study of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage

Yuan Guang-Cai, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Sun Qin-Jun, Xu Xu-Rong, Xu Na
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  • Accepted Date:  08 December 2008
  • Published Online:  20 July 2009

Study of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage

  • 1. (1)北京交通大学光电子技术研究所,北京 100044;北京交通大学发光与光信息技术教育部重点实验室,北京 100044; (2)北京交通大学理学院,北京 100044

Abstract: We have fabricated the top-contact organic thin film transistors (OTFTs) with, a 60 nm thick pentacene films as active layer and a 120 nm thermal growth SiO2 as gate insulator. Through using different self-assembled monolayers ,such as octadecyltrichlorosilane (OTS) and phenyltrimethoxysilane (PhTMS), as a buffer between the organic semiconductor active layer and gate insulator, we studied the effect of different buffers on the performance of OTFTs device. At the same time, we also investigated the field-effect behavior and carrier transport mechanism of OTFTs device with PhTMS buffer under low gate modulation voltage. When |VGS|IDS of OTFTs device keeping balance. But the OTFT device still has good output characteristics, with the field-effect mobility (μEF) of 3.22×10-3 cm2/Vs, (on/off) current ratio of 1.43×102, and threshold voltage (VTH) of -0.66 V.

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