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Effect of Schottky barrier on spin injection in ferromagnetic/organic semiconductor structure

Xiu Ming-Xia Ren Jun-Feng Wang Yu-Mei Yuan Xiao-Bo Hu Gui-Chao

Effect of Schottky barrier on spin injection in ferromagnetic/organic semiconductor structure

Xiu Ming-Xia, Ren Jun-Feng, Wang Yu-Mei, Yuan Xiao-Bo, Hu Gui-Chao
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  • Received Date:  22 March 2010
  • Accepted Date:  05 July 2010
  • Published Online:  15 December 2010

Effect of Schottky barrier on spin injection in ferromagnetic/organic semiconductor structure

  • 1. College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

Abstract: Theoretically we have studied the current spin polarization in the structure of ferromagnetic/organic semiconductor under Schottky contact and discussed its variations with potential barrier height, the special carriers in organic semiconductor layer and the its mobilities, doping concentration near the interface. The calculations show that the high mobilities of the carriers in organic semiconductors are conducive to the spin injection. We also find that a significant depletion region at Schottky contact is highly undesirable for spin injection. For an efficient spin injection, the depletion region near the interface should be heavily doped and the effective barrier height should be restricted wichin certain range.

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