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The factors influencing spin-polarized transport in magnetic pn junction

He Zhi-Gang Cheng Xing-Hua Cai Juan-Lu Shi Rui-Ying Gong Min

The factors influencing spin-polarized transport in magnetic pn junction

He Zhi-Gang, Cheng Xing-Hua, Cai Juan-Lu, Shi Rui-Ying, Gong Min
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  • Abstract views:  3710
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  • Received Date:  01 August 2009
  • Accepted Date:  14 January 2010
  • Published Online:  15 September 2010

The factors influencing spin-polarized transport in magnetic pn junction

  • 1. (1)Department of Microelectronics, Sichuan University, Chengdu 610064, China; (2)Department of Microelectronics, Sichuan University, Chengdu 610064, China;Key Laboratory of Microelectronics Technology of Sichuan Province, Chengdu 610064, China

Abstract: Spin-polarized transport in magnetic pn junction has been theoretically studied by using the drift-diffusive theory. The factors considered include bias voltage, equilibrium spin polarization,spin injection and spin life time, which could effectively affect the current density and resistance. The connection between spin-voltaic effect of the magnetic pn junction and thickness of the junction was also discussed. It is found that the equilibrium spin polarization makes the spin electrons with different orientations (up or down) have different barriers, which makes the current effectively modulated. However, the spin injection modulates the current by providing non-equilibrium spin electrons in the magnetic pn junction. It is also found that the spin-voltaic current is sensitive to quasi-neutral p-type region width.

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