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Degradation model of GaAs vacuum electron sources

Zhang Yi-Jun Yang Zhi Chang Ben-Kang Zou Ji-Jun

Degradation model of GaAs vacuum electron sources

Zhang Yi-Jun, Yang Zhi, Chang Ben-Kang, Zou Ji-Jun
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  • Received Date:  10 February 2010
  • Accepted Date:  25 April 2010
  • Published Online:  15 January 2011

Degradation model of GaAs vacuum electron sources

  • 1. (1)Institute of Electronic Engineering and Opto-electronic Technology,Nanjing University of Science and Technology,Nanjing 210094,China; (2)Institute of Electronic Engineering and Opto-electronic Technology,Nanjing University of Science and Technology,Nanjing 210094,China;Engineering Research Center of Nuclear Technology Application (East China Institute of Technology),

Abstract: The degradation of activated GaAs vacuum electron source as a function of time has been investigated by using X-ray photoelectron spectroscopy (XPS).We found that the cathode surface element content changes with time and the significant decrease in sensitivity of electron source is mainly due to the change of dipole direction caused by the adsorption of harmful gases on the cathode surface.Based on the above results,we deduced the degradation model of GaAs electron source through analyzing the adsorption process of harmful gases on the surface in vacuum system.The model reveals the exponential degradation rule of GaAs electron sources and the inverse relationship between lifetime and pressure.The theoretical results are in full agreement with the experimental fact.

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