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Spin injection in GaAs and giant Hall effect

Wang Zhi-Ming

Spin injection in GaAs and giant Hall effect

Wang Zhi-Ming
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  • PDF Downloads:  665
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Publishing process
  • Received Date:  02 September 2010
  • Accepted Date:  30 October 2010
  • Published Online:  15 July 2011

Spin injection in GaAs and giant Hall effect

  • 1. Institute of Mechanical Engineering Nanjing University of Science and Technology, Nanjing 210094, China;Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

Abstract: In spintronics, general spin injection is achieved by the superlattice, spin valve, tunnel junction, other typical method of spin injection is to dilute magnetic semiconductor such as: GaMnAs. In this paper, spin Fe particles are injected into the GaAs matrix by using the magnetron sputtering to form the granular film (GaAs)19Fe81, in which saturated Hall resistivity ρxys is shown to be 15 μΩ·cm at room temperature, which is about 2 orders larger than that of pure Fe. So the spin injection is successfully realized.

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