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Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes

Hu Mei-Jiao Li Cheng Xu Jian-Fang Lai Hong-Kai Chen Song-Yan

Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes

Hu Mei-Jiao, Li Cheng, Xu Jian-Fang, Lai Hong-Kai, Chen Song-Yan
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  • Si0.82Ge0.18/SOI prepared by epitaxial growth of SiGe layer on SOI wafer in the ultra-high vacuum chemical vapor deposition is used to fabricate the SiGe on insulator (SGOI) substrate (0.24≤xGe≤1) by the cyclic oxidation and annealing processes. The structure and the optical properties of the SGOI with various Ge content are studied by employing HRTEM, Raman spectroscopy, and photoluminescence (PL) spectroscopy. The variations of Ge component and strain in the oxidation process are analyzed. High crystal quality Ge on insulator (GeOI), with a thickness of 11 nm, is obtained with a flat Ge/SiO2 interface. The direct band transition photoluminescence of the GeOI is observed at room temperature. The photoluminescence peak from GeOI is located at 1540 nm, and the PL intensity increases linearly with exciting power increasing. It is indicated that the formed GOI material has a high crystallization quality and is suitable for the applications in Ge optoelectronic and microelectronic devices.
    • Funds:
    [1]

    Tracy C J, Fejes P, Theodore N D, Maniar P, Johnson E, Lamm A J, Paler A M, Malik I J, Ong P 2004 J. Electron. Mater. 33 886

    [2]

    Celler G K, Cristoloveanu S 2003 J. Appl. Phys. 93 4955

    [3]

    Lee M L, Fitzgerald E A 2003 Appl. Phys. Lett. 83 4202

    [4]

    Mooney P M, Chu J O 2000 Annu. Rev. Mater. Sci. 30 335

    [5]

    Ma L, Gao Y 2009 Acta Phys.Sin. 58 529 (in Chinese)[马 丽、高 勇 2009 物理学报 58 529]

    [6]

    Chui C O, Ramanathan S, Triplett B B, McIntyre P C, Saraswat K C 2002 IEEE Electron Device Lett. 23 473

    [7]

    Bai W P, Lu N, Liu J, Ramirez A, Kwong D L, Wristers D, Ritenour A, Lee L, Antoniadis D 2003 Symposium on VLSI Technology:Digest of Technical Papers Kyoto, Japan, June 10—12, 2003 p121

    [8]

    Shang H, Okorn-Schimdt H, Ott J, Kozlowski P, Steen S, Jones E C, Wong H S P, Hanesch W 2003 IEEE Electron Device Lett. 24 242

    [9]

    Liu Y C, Deal M D, Plummer J D 2004 Appl. Phys. Lett. 84 2563

    [10]

    Gao X G, Liu C, Li J P, Zeng Y P, Li J M 2005 Microlectronics 35 76 (in chinese) [高兴国、刘 超、李建平、曾一平、李晋闽 2005 微电子学35 76]

    [11]

    Tang Y S, Zhang J P, Hemment P L F, Sealy B J 1990 J. Appl. Phys. 67 7151

    [12]

    Sugiyama N, Mizuno T, Suzuki M, Takagi S 2001 Jpn. J. Appl. Phys. 40 2875

    [13]

    Cheng Z, Taraschi G, Currie M T, Leitz C W, Lee M L, Pitera A, Langdo T A, Hoyt J L, Antoniadis D A, Fitzgerald E A 2001 J. Electron. Mater. 30 37

    [14]

    Deguet C, Sanchez L, Akatsu T, Allibert F, Dechamp J, Madeira F, Mazen F, Tauzin A, Loup V, Richtarch C, Mercier D, Signamarcheix T, Letertre F, Depuydt B, Kernevez N 2006 Electron. Lett. 42 415

    [15]

    Tezuka T, Sugiyama N, Takagi S 2001 Appl. Phys. Lett. 79 1798

    [16]

    Di Z F, Zhang M, Liu W L, Luo S H, Song Z T, Lin C L, Huang A P, Chu P K 2005 J. Vac. Sci. Technol. B 23 1637

    [17]

    Zhang Y, Cai K H, Li C, Chen S Y, Lai H K, Kang J Y 2009 J. Electrochem. Soc. 156 115

    [18]

    Eugéne J, LeGoues F K, Kesan V P, Lyer S S, d'Heurle F M 1991 Appl. Phys. Lett. 59 78

    [19]

    Tezuka T, Sugiyama N, Mizuno T, Suzuki M, Takagi S 2001 Jpn. J. Appl. Phys. 140 2866

    [20]

    Shimura T, Shimizu M, Horiuchi S, Watanabe H, Yasutake K, Umeno M 2006 Appl. Phys. Lett. 89 111923

    [21]

    Di Z F, Zhang M, Liu W L, Zhu M, Lin C L, Chu P K 2005 Mater. Sci. Eng. B 124-125 153

    [22]

    Groenen J, Carles R, Christiansen S, Albrecht M, Dorsch W, Strunk H P, Wawra H, Wagner G 1997 Appl. Phys. Lett. 71 3856

    [23]

    Sheng H, Jiang Z M, Lu F, Huang D M 2004 Silicon-Germanium Superlattices and Low Dimensional Quantum Structures (Shanghai: Shanghai Science and Technology Press) pp54—55 (in Chinese) [盛 箎、蒋最敏、陆昉、黄大鸣 2004 硅锗超晶格及低维量子结构 (上海:上海科学技术出版社) 第54—55页]

    [24]

    Li C, Chen Y H, Zhou Z W, Lai H K, Chen S Y 2009 Appl. Phys. Lett. 95 251102

  • [1]

    Tracy C J, Fejes P, Theodore N D, Maniar P, Johnson E, Lamm A J, Paler A M, Malik I J, Ong P 2004 J. Electron. Mater. 33 886

    [2]

    Celler G K, Cristoloveanu S 2003 J. Appl. Phys. 93 4955

    [3]

    Lee M L, Fitzgerald E A 2003 Appl. Phys. Lett. 83 4202

    [4]

    Mooney P M, Chu J O 2000 Annu. Rev. Mater. Sci. 30 335

    [5]

    Ma L, Gao Y 2009 Acta Phys.Sin. 58 529 (in Chinese)[马 丽、高 勇 2009 物理学报 58 529]

    [6]

    Chui C O, Ramanathan S, Triplett B B, McIntyre P C, Saraswat K C 2002 IEEE Electron Device Lett. 23 473

    [7]

    Bai W P, Lu N, Liu J, Ramirez A, Kwong D L, Wristers D, Ritenour A, Lee L, Antoniadis D 2003 Symposium on VLSI Technology:Digest of Technical Papers Kyoto, Japan, June 10—12, 2003 p121

    [8]

    Shang H, Okorn-Schimdt H, Ott J, Kozlowski P, Steen S, Jones E C, Wong H S P, Hanesch W 2003 IEEE Electron Device Lett. 24 242

    [9]

    Liu Y C, Deal M D, Plummer J D 2004 Appl. Phys. Lett. 84 2563

    [10]

    Gao X G, Liu C, Li J P, Zeng Y P, Li J M 2005 Microlectronics 35 76 (in chinese) [高兴国、刘 超、李建平、曾一平、李晋闽 2005 微电子学35 76]

    [11]

    Tang Y S, Zhang J P, Hemment P L F, Sealy B J 1990 J. Appl. Phys. 67 7151

    [12]

    Sugiyama N, Mizuno T, Suzuki M, Takagi S 2001 Jpn. J. Appl. Phys. 40 2875

    [13]

    Cheng Z, Taraschi G, Currie M T, Leitz C W, Lee M L, Pitera A, Langdo T A, Hoyt J L, Antoniadis D A, Fitzgerald E A 2001 J. Electron. Mater. 30 37

    [14]

    Deguet C, Sanchez L, Akatsu T, Allibert F, Dechamp J, Madeira F, Mazen F, Tauzin A, Loup V, Richtarch C, Mercier D, Signamarcheix T, Letertre F, Depuydt B, Kernevez N 2006 Electron. Lett. 42 415

    [15]

    Tezuka T, Sugiyama N, Takagi S 2001 Appl. Phys. Lett. 79 1798

    [16]

    Di Z F, Zhang M, Liu W L, Luo S H, Song Z T, Lin C L, Huang A P, Chu P K 2005 J. Vac. Sci. Technol. B 23 1637

    [17]

    Zhang Y, Cai K H, Li C, Chen S Y, Lai H K, Kang J Y 2009 J. Electrochem. Soc. 156 115

    [18]

    Eugéne J, LeGoues F K, Kesan V P, Lyer S S, d'Heurle F M 1991 Appl. Phys. Lett. 59 78

    [19]

    Tezuka T, Sugiyama N, Mizuno T, Suzuki M, Takagi S 2001 Jpn. J. Appl. Phys. 140 2866

    [20]

    Shimura T, Shimizu M, Horiuchi S, Watanabe H, Yasutake K, Umeno M 2006 Appl. Phys. Lett. 89 111923

    [21]

    Di Z F, Zhang M, Liu W L, Zhu M, Lin C L, Chu P K 2005 Mater. Sci. Eng. B 124-125 153

    [22]

    Groenen J, Carles R, Christiansen S, Albrecht M, Dorsch W, Strunk H P, Wawra H, Wagner G 1997 Appl. Phys. Lett. 71 3856

    [23]

    Sheng H, Jiang Z M, Lu F, Huang D M 2004 Silicon-Germanium Superlattices and Low Dimensional Quantum Structures (Shanghai: Shanghai Science and Technology Press) pp54—55 (in Chinese) [盛 箎、蒋最敏、陆昉、黄大鸣 2004 硅锗超晶格及低维量子结构 (上海:上海科学技术出版社) 第54—55页]

    [24]

    Li C, Chen Y H, Zhou Z W, Lai H K, Chen S Y 2009 Appl. Phys. Lett. 95 251102

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  • Received Date:  23 September 2010
  • Accepted Date:  11 October 2010
  • Published Online:  15 July 2011

Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes

  • 1. Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China

Abstract: Si0.82Ge0.18/SOI prepared by epitaxial growth of SiGe layer on SOI wafer in the ultra-high vacuum chemical vapor deposition is used to fabricate the SiGe on insulator (SGOI) substrate (0.24≤xGe≤1) by the cyclic oxidation and annealing processes. The structure and the optical properties of the SGOI with various Ge content are studied by employing HRTEM, Raman spectroscopy, and photoluminescence (PL) spectroscopy. The variations of Ge component and strain in the oxidation process are analyzed. High crystal quality Ge on insulator (GeOI), with a thickness of 11 nm, is obtained with a flat Ge/SiO2 interface. The direct band transition photoluminescence of the GeOI is observed at room temperature. The photoluminescence peak from GeOI is located at 1540 nm, and the PL intensity increases linearly with exciting power increasing. It is indicated that the formed GOI material has a high crystallization quality and is suitable for the applications in Ge optoelectronic and microelectronic devices.

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