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An model of tunneling gate current for uniaxially strained Si nMOSFET

Wu Hua-Ying Zhang He-Ming Song Jian-Jun Hu Hui-Yong

An model of tunneling gate current for uniaxially strained Si nMOSFET

Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong
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  • Based on quantum mechanics, a tunneling current of uniaxially strained Si nMOSFET is bulit. The relationships between the tunneling current and device structure parameter, biased voltage and stress are analyzed. The simulation result is shown to accord well with the reported experimentalal result, implying that our model is correct. Our result is also compared with the result of biaxially stressed silicon nMOSFET, which shows that the current of uniaxially straining Si nMOSFET is lower than that of biaxially stressed silicon nMOSFET, and so uniaxial devices have advantages over biaxial devices. The model has a definite physical mechanism and it is suitable not only for uniaxially strained Si nMOSFET, but also for uniaxially strained Si pMOSFET,as long as changing the relevant parameters.
    • Funds:
    [1]

    Ghetti A, Liu, Mastrapasqua M 2000 IEEE Trans. Electron Devices 44 1523

    [2]

    Guo Y H, Zhao Z P, Hao Y, Liu Y G, Wu Y B, Lü M 2005 Acta Phys. Sin. 54 1804 (in Chinese)[郭荣辉、赵正平、郝 跃、刘玉贵、武一宾、吕 苗 2005 物理学报 54 1804]

    [3]

    Chen W B, Xue J P, Zou X, Li Y P, Xue S G, Hu Z F 2006 Acta Phys. Sin. 55 5036 (in Chinese)[陈卫兵、徐静平、邹 晓、李艳萍、许胜国、胡致富 2006 物理学报 55 5036]

    [4]

    Ghetti A, Sangiorgi E, Bude J 2000 IEEE Trans. Electron Devices 47 2358

    [5]

    Zhang Zh F, Zhang H M, Hu H Y, Xuan R X, Song J J 2008 Acta Phys. Sin. 57 4667 (in Chinese)[张志峰、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 物理学报 57 4667]

    [6]

    Rim K, Hoyt K, Gibbon J F 2000 IEEE Trans. Electron Devices 47 1406

    [7]

    Irisawa T, Numata T, Toyoda E 2007 Symposium on VLSI Technology Digest of Technolcal Papers 36

    [8]

    Garros X, Rochette F, Andrieu F 2009 Journal of Applied Physis 105 114508

    [9]

    Zainmddin A N M, Haque A 2006 Proceedings of the 4th International Conference on Electrical and Computer Engineering ICECE 2006. 19

    [10]

    Wu H, Zhao Y, White M H 2006 Solid State Electron 50 1164

    [11]

    Ungersboeck E, Dhar S, Karlowatz G 2007 Journal of Computational Electronics 6 55

    [12]

    Lim J S, Yang X, Nishida T, Thompson S E 2006 Appl. Phys. Lett. 89 073509

    [13]

    Hsieh C Y, Chen M J 2007 IEEE Electron Device Lett. 28 818

    [14]

    Lim S 2004 IEEE Electron Device Lett. 25 11

    [15]

    Zhang W, Fossum J G 2005 IEEE Trans. Electron Devices 52 263

    [16]

    Yijie Zhao, Marvin H White 2004 Solid-State Electronics 48 1801

    [17]

    Ghatak A, Lokanathan S 2004Quantum Mechanics Theory and Application,5th ed. New Delhi, India: McMillan 380

    [18]

    Leonard F Register, Elyse Rosenbaum, Kevin Yang 1999 Journal of Applied Phys. Lett. 74 3

    [19]

    Xiaodong Yang, Younsung Choi, Toshikazu Nishida 2007 Proceedings of 2007 International Workshouon Electron Device and Semiconductor Technonogy 149

  • [1]

    Ghetti A, Liu, Mastrapasqua M 2000 IEEE Trans. Electron Devices 44 1523

    [2]

    Guo Y H, Zhao Z P, Hao Y, Liu Y G, Wu Y B, Lü M 2005 Acta Phys. Sin. 54 1804 (in Chinese)[郭荣辉、赵正平、郝 跃、刘玉贵、武一宾、吕 苗 2005 物理学报 54 1804]

    [3]

    Chen W B, Xue J P, Zou X, Li Y P, Xue S G, Hu Z F 2006 Acta Phys. Sin. 55 5036 (in Chinese)[陈卫兵、徐静平、邹 晓、李艳萍、许胜国、胡致富 2006 物理学报 55 5036]

    [4]

    Ghetti A, Sangiorgi E, Bude J 2000 IEEE Trans. Electron Devices 47 2358

    [5]

    Zhang Zh F, Zhang H M, Hu H Y, Xuan R X, Song J J 2008 Acta Phys. Sin. 57 4667 (in Chinese)[张志峰、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 物理学报 57 4667]

    [6]

    Rim K, Hoyt K, Gibbon J F 2000 IEEE Trans. Electron Devices 47 1406

    [7]

    Irisawa T, Numata T, Toyoda E 2007 Symposium on VLSI Technology Digest of Technolcal Papers 36

    [8]

    Garros X, Rochette F, Andrieu F 2009 Journal of Applied Physis 105 114508

    [9]

    Zainmddin A N M, Haque A 2006 Proceedings of the 4th International Conference on Electrical and Computer Engineering ICECE 2006. 19

    [10]

    Wu H, Zhao Y, White M H 2006 Solid State Electron 50 1164

    [11]

    Ungersboeck E, Dhar S, Karlowatz G 2007 Journal of Computational Electronics 6 55

    [12]

    Lim J S, Yang X, Nishida T, Thompson S E 2006 Appl. Phys. Lett. 89 073509

    [13]

    Hsieh C Y, Chen M J 2007 IEEE Electron Device Lett. 28 818

    [14]

    Lim S 2004 IEEE Electron Device Lett. 25 11

    [15]

    Zhang W, Fossum J G 2005 IEEE Trans. Electron Devices 52 263

    [16]

    Yijie Zhao, Marvin H White 2004 Solid-State Electronics 48 1801

    [17]

    Ghatak A, Lokanathan S 2004Quantum Mechanics Theory and Application,5th ed. New Delhi, India: McMillan 380

    [18]

    Leonard F Register, Elyse Rosenbaum, Kevin Yang 1999 Journal of Applied Phys. Lett. 74 3

    [19]

    Xiaodong Yang, Younsung Choi, Toshikazu Nishida 2007 Proceedings of 2007 International Workshouon Electron Device and Semiconductor Technonogy 149

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    [5] Jin Zhao, Qiao Li-Ping, Guo Chen, Wang Jiang-An, Richard C. Liu. Electronic conductivity effective masses along arbitrary directional channel in uniaxial strained Si(001). Acta Physica Sinica, 2013, 62(5): 058501. doi: 10.7498/aps.62.058501
    [6] Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua. A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica, 2003, 52(8): 2046-2051. doi: 10.7498/aps.52.2046
    [7] Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi, Cui Xiao-Ying. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica, 2007, 56(6): 3504-3508. doi: 10.7498/aps.56.3504
    [8] Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng. Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias. Acta Physica Sinica, 2006, 55(7): 3622-3628. doi: 10.7498/aps.55.3622
    [9] Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming. Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor. Acta Physica Sinica, 2016, 65(1): 018501. doi: 10.7498/aps.65.018501
    [10] Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming. Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202. doi: 10.7498/aps.60.017202
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Publishing process
  • Received Date:  12 October 2010
  • Accepted Date:  03 December 2010
  • Published Online:  15 September 2011

An model of tunneling gate current for uniaxially strained Si nMOSFET

  • 1. Microelectronics Insititute, Xidian University, key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071, Chnia

Abstract: Based on quantum mechanics, a tunneling current of uniaxially strained Si nMOSFET is bulit. The relationships between the tunneling current and device structure parameter, biased voltage and stress are analyzed. The simulation result is shown to accord well with the reported experimentalal result, implying that our model is correct. Our result is also compared with the result of biaxially stressed silicon nMOSFET, which shows that the current of uniaxially straining Si nMOSFET is lower than that of biaxially stressed silicon nMOSFET, and so uniaxial devices have advantages over biaxial devices. The model has a definite physical mechanism and it is suitable not only for uniaxially strained Si nMOSFET, but also for uniaxially strained Si pMOSFET,as long as changing the relevant parameters.

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