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Radiation damage of space GaAs/Ge solar cells evaluated by displacement damage dose

Lan Mu-Jie Wu Yi-Yong Yue Long Xiao Jing-Dong Yang De-Zhuang He Shi-Yu Hu Jian-Min Zhang Zhong-Wei Wang Xun-Chun Qian Yong Chen Ming-Bo

Radiation damage of space GaAs/Ge solar cells evaluated by displacement damage dose

Lan Mu-Jie, Wu Yi-Yong, Yue Long, Xiao Jing-Dong, Yang De-Zhuang, He Shi-Yu, Hu Jian-Min, Zhang Zhong-Wei, Wang Xun-Chun, Qian Yong, Chen Ming-Bo
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  • In this paper,the degradation of irradiated GaAs/Ge single junction (SJ) solar cells is evaluated under the orbital environments using the displacement damage dose method. Firstly the electric-property changes of the SJ solar cells are experimentally obtained with the fluencies of electrons and protons of various energies under ground-based irradiation simulators. Based on the experimenal results and the calculated non-ionization energy losses (NIELs) of the electrons and protons in GaAs, the equivalent exponent n is obtained to be 1.7 for various electron energies,while the equivalent coefficient Rep for electron displacement damage converted into that of protons is 5.2. Furthermore, a degradation formula of the electrical property of the domestic SJ solar cell is established as a function of displacement damage dose during the particle irradiation. Using the displacement damage technique, the orbital evolution of the electric property degradation of the domestic SJ cell is predicted in this paper. In the meantime, the shielding effects of the cover glass with different thicknesses are also evaluated.
    • Funds:
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    [2]

    de Angelis N, Bourgoin J C, Takamoto T, Khan A, Yamaguchi M 2001 Sol.Energy Mater. Sol. Cells 66 495

    [3]

    Haapamaa J, Pessa M, Roche G La 2001 Sol.Energy Mater.Sol.Cells 66 573

    [4]

    Li B, Xiang X B, You Z P, Xu Y, Fei X Y, Liao X B 1996 Sol. Energy Mater. Sol. Cells 44 63

    [5]

    Bougoin J C, de Angelis N 2001 Sol. Energy Mater. Sol. Cells 66 467

    [6]

    Zhang Z W,Lu J F,Chi W Y,Wang L X,Cheng M B 2003 Aerospace Shanghai 3 33 (in Chinese)[张忠卫、 陆剑锋、 池卫英、 王亮兴、 陈鸣波 2003上海航天 3 33]

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    Chen T J 1997 Semicond. Optoelectronics 18 56(in Chinese) [陈庭金 1997 半导体光电 18 56]

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    Shi X Z,Li S Q,Yan H P,Ding D H 1995 Semicond. Optoelectronics 16 313(in Chinese)[施小忠、 李世清、 鄢和平、 丁棣华 1995半导体光电 16 313]

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    Wang R,Zhang X H,Guo Z L 2003 Nucl. Techni. 26(6) 1(in Chinese)[王 荣、 张新辉、 郭增良 2003核技术 26(6) 1]

    [10]

    Sheila G, Bailey, Dennis J, Flood 1998 Progr. Photovoltaics Res. Applicat 6 1

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    Robert Y, Loo G, Sanjiv K, Sheng S L 1990 IEEE Trans. Electr. Dev. 37 485

    [12]

    Ewan J, Kamath G S, Knechtli R C 1975 Proceedings of the 11th IEEE Photovoltaic Specialists Conference New York May 6—8 p509

    [13]

    Michel R, Philippe A 1985 J. Appl. Phys. 57 5192

    [14]

    Hu J M, Wu Y Y, Zhang Z W, Yang D Z, He S Y 2008 Nucl. Instrum. Methods Phys. Res. B 266 267

    [15]

    Hu J M, Wu Y Y, Yang D Z, He S Y 2008 Nucl. Instrum. Methods Phys. Res. B 266 3577

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    Zhao H J, He S Y, Sun Y Z, Sun Q, Xiao Z B, Lv W, Huang C Y, Xiao J D, Wu Y Y 2009 Acta. Phys. Sin. 58 404 (in Chinese)[赵慧杰、 何世禹、 孙彦铮、 孙 强、 肖志斌、 吕 伟、 黄才勇、 肖景东、 吴宜勇 2009 物理学报 58 404]

    [17]

    Summers G P,Messenger S A, Walters R J, Burke E A 2001 Progr. Photovoltaics Res. Applicat. 9 103

    [18]

    Chen P X 2005 Radiation effects on semiconductor devices and integrated circuits (Beijing:Natioal Defence Industry Press) p28—37(in Chinese)[陈盘训2005半导体器件和集成电路的辐射效应(北京:国防工业出版社) 第28—37页]

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    Cao J Z 1993 Radiation effects in material of semiconductor (Beijing:Science Press) p 25—43(in Chinese)[曹建中 1993 半导体材料的辐照效应 (北京:科学出版社)第25—43 页]

    [20]

    Messenger S R, Burke E A, Morton T L, Summers G P, Walters R J, Warner J H 2003 3rd World Conference on Photovoltaic Energy Conversion Osaka, Japan May 11—18, 2003 p716—719

    [21]

    Morton T L, Chock R, Long K J, Bailey S, Messenger S R, Walters R J, Summers G P 1999 Progr. Photovoltaics Res. Applicat. 7 228

    [22]

    Anspaugh B E 1991 Proceedings of the 22nd IEEE Photovoltaic Spacialist Conference Las Vegas,1991 p1593—1598

    [23]

    Summers G P, Messenger S R, Burke E A,Xapsos M A,Walters R J 1997 Appl. Phys. Lett. 71 832

    [24]

    Summers G P, Messenger S R, Burke E A, Xapsos M A, Walters R J 1997 Progr. Photovoltaics Res. Applicat. 5 407

    [25]

    Sawyer D M, Vette J I 1976 NSSDC/ WDC-A-R&S 76-06

    [26]

    Vette J I 1991 NSSDC/WDC-A-R&S 91-24

    [27]

    Feynman J, Spitale G, Wang J, Gabriel S 1993 J. Geophys. Res. 98 281

    [28]

    Mayer P, Ramaty R, Webber W R 1974 Phys. Today 27 23

    [29]

    Takamoto T, Okazaki H, Takamura H, Ohmori M, Ura M, Yamaguchi M 1990 Indium Phosphide and Related Materials, 1990. Second International Conference Denver Apr 23—25 1990 p62—65

  • [1]

    Anspaugh B E 1996 GaAs Solar Cell Radiation Handbook (Pasadena:JPL Publication) p 1—2

    [2]

    de Angelis N, Bourgoin J C, Takamoto T, Khan A, Yamaguchi M 2001 Sol.Energy Mater. Sol. Cells 66 495

    [3]

    Haapamaa J, Pessa M, Roche G La 2001 Sol.Energy Mater.Sol.Cells 66 573

    [4]

    Li B, Xiang X B, You Z P, Xu Y, Fei X Y, Liao X B 1996 Sol. Energy Mater. Sol. Cells 44 63

    [5]

    Bougoin J C, de Angelis N 2001 Sol. Energy Mater. Sol. Cells 66 467

    [6]

    Zhang Z W,Lu J F,Chi W Y,Wang L X,Cheng M B 2003 Aerospace Shanghai 3 33 (in Chinese)[张忠卫、 陆剑锋、 池卫英、 王亮兴、 陈鸣波 2003上海航天 3 33]

    [7]

    Chen T J 1997 Semicond. Optoelectronics 18 56(in Chinese) [陈庭金 1997 半导体光电 18 56]

    [8]

    Shi X Z,Li S Q,Yan H P,Ding D H 1995 Semicond. Optoelectronics 16 313(in Chinese)[施小忠、 李世清、 鄢和平、 丁棣华 1995半导体光电 16 313]

    [9]

    Wang R,Zhang X H,Guo Z L 2003 Nucl. Techni. 26(6) 1(in Chinese)[王 荣、 张新辉、 郭增良 2003核技术 26(6) 1]

    [10]

    Sheila G, Bailey, Dennis J, Flood 1998 Progr. Photovoltaics Res. Applicat 6 1

    [11]

    Robert Y, Loo G, Sanjiv K, Sheng S L 1990 IEEE Trans. Electr. Dev. 37 485

    [12]

    Ewan J, Kamath G S, Knechtli R C 1975 Proceedings of the 11th IEEE Photovoltaic Specialists Conference New York May 6—8 p509

    [13]

    Michel R, Philippe A 1985 J. Appl. Phys. 57 5192

    [14]

    Hu J M, Wu Y Y, Zhang Z W, Yang D Z, He S Y 2008 Nucl. Instrum. Methods Phys. Res. B 266 267

    [15]

    Hu J M, Wu Y Y, Yang D Z, He S Y 2008 Nucl. Instrum. Methods Phys. Res. B 266 3577

    [16]

    Zhao H J, He S Y, Sun Y Z, Sun Q, Xiao Z B, Lv W, Huang C Y, Xiao J D, Wu Y Y 2009 Acta. Phys. Sin. 58 404 (in Chinese)[赵慧杰、 何世禹、 孙彦铮、 孙 强、 肖志斌、 吕 伟、 黄才勇、 肖景东、 吴宜勇 2009 物理学报 58 404]

    [17]

    Summers G P,Messenger S A, Walters R J, Burke E A 2001 Progr. Photovoltaics Res. Applicat. 9 103

    [18]

    Chen P X 2005 Radiation effects on semiconductor devices and integrated circuits (Beijing:Natioal Defence Industry Press) p28—37(in Chinese)[陈盘训2005半导体器件和集成电路的辐射效应(北京:国防工业出版社) 第28—37页]

    [19]

    Cao J Z 1993 Radiation effects in material of semiconductor (Beijing:Science Press) p 25—43(in Chinese)[曹建中 1993 半导体材料的辐照效应 (北京:科学出版社)第25—43 页]

    [20]

    Messenger S R, Burke E A, Morton T L, Summers G P, Walters R J, Warner J H 2003 3rd World Conference on Photovoltaic Energy Conversion Osaka, Japan May 11—18, 2003 p716—719

    [21]

    Morton T L, Chock R, Long K J, Bailey S, Messenger S R, Walters R J, Summers G P 1999 Progr. Photovoltaics Res. Applicat. 7 228

    [22]

    Anspaugh B E 1991 Proceedings of the 22nd IEEE Photovoltaic Spacialist Conference Las Vegas,1991 p1593—1598

    [23]

    Summers G P, Messenger S R, Burke E A,Xapsos M A,Walters R J 1997 Appl. Phys. Lett. 71 832

    [24]

    Summers G P, Messenger S R, Burke E A, Xapsos M A, Walters R J 1997 Progr. Photovoltaics Res. Applicat. 5 407

    [25]

    Sawyer D M, Vette J I 1976 NSSDC/ WDC-A-R&S 76-06

    [26]

    Vette J I 1991 NSSDC/WDC-A-R&S 91-24

    [27]

    Feynman J, Spitale G, Wang J, Gabriel S 1993 J. Geophys. Res. 98 281

    [28]

    Mayer P, Ramaty R, Webber W R 1974 Phys. Today 27 23

    [29]

    Takamoto T, Okazaki H, Takamura H, Ohmori M, Ura M, Yamaguchi M 1990 Indium Phosphide and Related Materials, 1990. Second International Conference Denver Apr 23—25 1990 p62—65

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  • Received Date:  13 May 2010
  • Accepted Date:  27 December 2010
  • Published Online:  15 September 2011

Radiation damage of space GaAs/Ge solar cells evaluated by displacement damage dose

  • 1. (1)Harbin Institute of Technology,School of Astronautics, Harbin 150001, China; (2)Harbin Institute of Technology,School of Material Science and Engineering,Harbin 150001, China; (3)Harbin Normal University,School of Physics and Electronic Engineering,Harbin 150001, China; (4)Shanghai Institute of Space Power-sources, Shanghai 200233, China

Abstract: In this paper,the degradation of irradiated GaAs/Ge single junction (SJ) solar cells is evaluated under the orbital environments using the displacement damage dose method. Firstly the electric-property changes of the SJ solar cells are experimentally obtained with the fluencies of electrons and protons of various energies under ground-based irradiation simulators. Based on the experimenal results and the calculated non-ionization energy losses (NIELs) of the electrons and protons in GaAs, the equivalent exponent n is obtained to be 1.7 for various electron energies,while the equivalent coefficient Rep for electron displacement damage converted into that of protons is 5.2. Furthermore, a degradation formula of the electrical property of the domestic SJ solar cell is established as a function of displacement damage dose during the particle irradiation. Using the displacement damage technique, the orbital evolution of the electric property degradation of the domestic SJ cell is predicted in this paper. In the meantime, the shielding effects of the cover glass with different thicknesses are also evaluated.

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