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Effects of Fe doping on the crystal structures and photoluminescences of ZnO: Ni thin films prepared by sol-gel method

Wu Zhong-Hao Xu Ming Duan Wen-Qian

Effects of Fe doping on the crystal structures and photoluminescences of ZnO: Ni thin films prepared by sol-gel method

Wu Zhong-Hao, Xu Ming, Duan Wen-Qian
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  • Zn0.95-xNi0.05FexO (x=0, 0.005, 0.01, 0.03, 0.05) thin films are fabricated on the glass substrates by the sol-gel method. The surface morphologies and crystal structures of the films are investigated using scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results reveal that preferential orientations are all along the (002) direction in all films. the qualities of ZnO: Ni films for low or high Fe concentration become worse, the crystal grain sizes of ZnO: Ni film are reduced, but moderate Fe doping seems to improve the film quality. XPS results reveal that Ni elements exist as Ni2+, and Fe elements exist as Fe2+ and Fe3+. Strong ultraviolet emission peaks, blue double emission peaks and green emission peaks are observed in the photoluminescence spectra of all samples at room temperature. It is found that the PL intensities of (Ni, Fe) co-doped ZnO films could be well modulated by Fe doping. In combination with other reports, we think that the ultraviolet emission peaks are due to exciton recombination; while the blue double peaks are caused by transition of electrons from the zinc interstitial to the top of the valence band or from the oxygen vacancy to the zinc vacancy. However, the green peak is highly dependent on oxygen vacancy and zinc vacancy formed by doping.
    • Funds: Project supported by the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 11NZYTH04), the Talent Funds of Southwest University for Nationalities of China (Grant No. 26727501) and the Subject Construction Funds of Southwest University for Nationalities of China (Grant No. 2011XWD-S0805).
    [1]

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    [2]

    Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science. 287 1019

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    Look D C, Reynolds D C, Sizelove J R, Jones R L, Litton C W, Gantwell G, Harsch W C 1998 Solid State Commun. 105 399

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    Kim K J, Park Y R 2001 Appl. Phys. Lett. 78 475

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    Pearton S J, Noron D P, Ip K, Heo Y W, Steiner T 2005 Prog. Mater. Sci. 50 293

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    Jiang J S, Hou Y B, Tang A W, Teng F 2008 Chin. J. Lumin. 29 149 (in Chinese) [蒋婧思, 侯延冰, 唐爱伟, 滕 枫 2008 发光学报 29 149]

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    Liu X C, Shi E W, Song L X, Zhang H W, Chen Z Z 2006 Acta Phys. Sin. 55 2557 (in Chinese) [刘学超, 施尔畏, 宋力昕, 张华伟, 陈之战 2006 物理学报 55 2557]

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    Peng X P, Lan W, Tan Y S, Tong L G, Wang Y Y 2004 Acta Phys. Sin. 53 2705 (in Chinese) [朋兴平, 兰 伟, 谭永胜, 佟立国, 王印月 2004 物理学报 53 2705]

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    Wu D C, Hu Z G, Duan M Y, Xu L X, Liu F S, Dong C J, Wu Y N, Ji H X, Xu M 2009 Acta Phys. Sin. 58 7261 (in Chinese) [吴定才, 胡志刚, 段满益, 徐禄祥, 刘方舒, 董成军, 吴艳南, 纪红萱, 徐 明 2009 物理学报 58 7261]

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    Wu Y N, Xu M, Wu D C, Dong C J, Zhang P P, Ji H J, He L 2011 Acta Phys. Sin. 60 077505 (in Chinese) [吴艳南, 徐 明, 吴定才, 董成军, 张佩佩, 纪红萱, 何 林 2001 物理学报 60 077505]

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    Hu Z G, Duan Y M, Xu M, Zhou X, Chen Q Y, Dong C J, Linghu R F 2009 Acta Phys. Sin. 58 1166 (in Chinese) [胡志刚, 段满益, 徐 明, 周 勋, 陈青云, 董成军, 令狐荣峰 2009 物理学报 58 1166]

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    Hu Z G, Zhou X, Xu M, Liu F S, Duan Y M, Wu D C, Dong C J, Chen S R, Wu Y N, Ji H X, Linghu R F 2010 Journal of Synthetic Crystals. 39 257 (in Chinese) [胡志刚, 周 勋, 徐 明, 刘方舒, 段满益, 吴定才, 董成军, 陈尚荣, 吴艳南, 纪红萱, 令狐荣峰 2010 人工晶体学报 39 257]

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    Xin M J, Chen Y Q, Jia C, Zhang X H 2008 Materials Letters 62 2717

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    Wang K, Zhou Z W, Liu G M, Li Y X 2006 Journal of Functional Materials 37 867 (in Chinese) [王 凯, 周祚万, 刘国梅, 李艳霞 2006 功能材料 37 867]

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    Wakano T, Fujimura N, Morinaga Y, Abe N, Ashida A, Ito T 2001 Physica E 10 260

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    Gao F, Wu Z H, Liu X Y 2008 Semiconductor Technology. 33 701 (in Chinese) [高 飞, 吴再华, 刘晓艳 2008 半导体技术 33 701]

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    Xu P S, Sun Y M, Shi C S, Xu F Q, Pan H B 2001 Sci. Chin. Ser. A 31 358 (in Chinese) [徐彭寿, 孙玉明, 施朝淑, 徐法强, 潘海斌 2001 中国科学A辑 31 358]

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    Fu Z X, Guo C X, Lin B X, Liao G H 1998 Chin. Phys. Lett. 15 457

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    He Y N, Wu M T, Zhu C C 2007 Journal of Synthetic Crystals. 36 1416 (in Chinese) [贺永宁, 武明堂, 朱长纯 2007 人工晶体学报 36 1416]

    [42]
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    Zhou T T, Ma S Y, Mao L M, Ding J J, Shi X F 2009 Journal of Functional Materials 40 960 (in Chinese) [周婷婷, 马书懿, 毛雷鸣, 丁继军, 史新福 2009 功能材料 40 960]

    [44]

    Lin B X, Fu Z X, Jia Y B, Liao G H 2001 Acta Phys. Sin. 50 2208 (in Chinese) [林碧霞, 傅竹西, 贾云波, 廖桂红 2001 物理学报 50 2208]

    [45]
  • [1]

    Sato K, Yoshida H K 2000 Jpn. J. Appl. Phys. Part 2 39 L555

    [2]

    Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science. 287 1019

    [3]
    [4]

    Look D C, Reynolds D C, Sizelove J R, Jones R L, Litton C W, Gantwell G, Harsch W C 1998 Solid State Commun. 105 399

    [5]
    [6]
    [7]

    Kim K J, Park Y R 2001 Appl. Phys. Lett. 78 475

    [8]

    Pearton S J, Noron D P, Ip K, Heo Y W, Steiner T 2005 Prog. Mater. Sci. 50 293

    [9]
    [10]
    [11]

    Jiang J S, Hou Y B, Tang A W, Teng F 2008 Chin. J. Lumin. 29 149 (in Chinese) [蒋婧思, 侯延冰, 唐爱伟, 滕 枫 2008 发光学报 29 149]

    [12]
    [13]

    Lan W, Tang G M, Cao W L, Liu X Q, Wang Y Y 2009 Acta Phys. Sin. 58 8501 (in Chinese) [兰 伟, 唐国梅, 曹文磊, 刘雪芹, 王印月 2009 物理学报 58 8501]

    [14]

    Liu X C, Shi E W, Song L X, Zhang H W, Chen Z Z 2006 Acta Phys. Sin. 55 2557 (in Chinese) [刘学超, 施尔畏, 宋力昕, 张华伟, 陈之战 2006 物理学报 55 2557]

    [15]
    [16]
    [17]

    Peng X P, Lan W, Tan Y S, Tong L G, Wang Y Y 2004 Acta Phys. Sin. 53 2705 (in Chinese) [朋兴平, 兰 伟, 谭永胜, 佟立国, 王印月 2004 物理学报 53 2705]

    [18]
    [19]

    Wu D C, Hu Z G, Duan M Y, Xu L X, Liu F S, Dong C J, Wu Y N, Ji H X, Xu M 2009 Acta Phys. Sin. 58 7261 (in Chinese) [吴定才, 胡志刚, 段满益, 徐禄祥, 刘方舒, 董成军, 吴艳南, 纪红萱, 徐 明 2009 物理学报 58 7261]

    [20]

    Wu Y N, Xu M, Wu D C, Dong C J, Zhang P P, Ji H J, He L 2011 Acta Phys. Sin. 60 077505 (in Chinese) [吴艳南, 徐 明, 吴定才, 董成军, 张佩佩, 纪红萱, 何 林 2001 物理学报 60 077505]

    [21]
    [22]

    Hu Z G, Duan Y M, Xu M, Zhou X, Chen Q Y, Dong C J, Linghu R F 2009 Acta Phys. Sin. 58 1166 (in Chinese) [胡志刚, 段满益, 徐 明, 周 勋, 陈青云, 董成军, 令狐荣峰 2009 物理学报 58 1166]

    [23]
    [24]

    Hu Z G, Zhou X, Xu M, Liu F S, Duan Y M, Wu D C, Dong C J, Chen S R, Wu Y N, Ji H X, Linghu R F 2010 Journal of Synthetic Crystals. 39 257 (in Chinese) [胡志刚, 周 勋, 徐 明, 刘方舒, 段满益, 吴定才, 董成军, 陈尚荣, 吴艳南, 纪红萱, 令狐荣峰 2010 人工晶体学报 39 257]

    [25]
    [26]
    [27]

    Fu T H, Gao J J, Liu F, Dai H J, Kou X M 2010 Chin.J.Catal 31 797 (in Chinese) [傅天华, 高倩倩, 刘斐, 代华均, 寇兴明 2010 催化学报 31 797]

    [28]

    Xin M J, Chen Y Q, Jia C, Zhang X H 2008 Materials Letters 62 2717

    [29]
    [30]
    [31]

    Wang K, Zhou Z W, Liu G M, Li Y X 2006 Journal of Functional Materials 37 867 (in Chinese) [王 凯, 周祚万, 刘国梅, 李艳霞 2006 功能材料 37 867]

    [32]
    [33]

    Wakano T, Fujimura N, Morinaga Y, Abe N, Ashida A, Ito T 2001 Physica E 10 260

    [34]

    Gao F, Wu Z H, Liu X Y 2008 Semiconductor Technology. 33 701 (in Chinese) [高 飞, 吴再华, 刘晓艳 2008 半导体技术 33 701]

    [35]
    [36]

    Xu P S, Sun Y M, Shi C S, Xu F Q, Pan H B 2001 Sci. Chin. Ser. A 31 358 (in Chinese) [徐彭寿, 孙玉明, 施朝淑, 徐法强, 潘海斌 2001 中国科学A辑 31 358]

    [37]
    [38]

    Fu Z X, Guo C X, Lin B X, Liao G H 1998 Chin. Phys. Lett. 15 457

    [39]
    [40]
    [41]

    He Y N, Wu M T, Zhu C C 2007 Journal of Synthetic Crystals. 36 1416 (in Chinese) [贺永宁, 武明堂, 朱长纯 2007 人工晶体学报 36 1416]

    [42]
    [43]

    Zhou T T, Ma S Y, Mao L M, Ding J J, Shi X F 2009 Journal of Functional Materials 40 960 (in Chinese) [周婷婷, 马书懿, 毛雷鸣, 丁继军, 史新福 2009 功能材料 40 960]

    [44]

    Lin B X, Fu Z X, Jia Y B, Liao G H 2001 Acta Phys. Sin. 50 2208 (in Chinese) [林碧霞, 傅竹西, 贾云波, 廖桂红 2001 物理学报 50 2208]

    [45]
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  • Received Date:  11 November 2011
  • Accepted Date:  05 December 2011
  • Published Online:  05 July 2012

Effects of Fe doping on the crystal structures and photoluminescences of ZnO: Ni thin films prepared by sol-gel method

  • 1. Key Laboratory of Information Materials of Sichuan Province, School of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu 610041, China
Fund Project:  Project supported by the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 11NZYTH04), the Talent Funds of Southwest University for Nationalities of China (Grant No. 26727501) and the Subject Construction Funds of Southwest University for Nationalities of China (Grant No. 2011XWD-S0805).

Abstract: Zn0.95-xNi0.05FexO (x=0, 0.005, 0.01, 0.03, 0.05) thin films are fabricated on the glass substrates by the sol-gel method. The surface morphologies and crystal structures of the films are investigated using scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results reveal that preferential orientations are all along the (002) direction in all films. the qualities of ZnO: Ni films for low or high Fe concentration become worse, the crystal grain sizes of ZnO: Ni film are reduced, but moderate Fe doping seems to improve the film quality. XPS results reveal that Ni elements exist as Ni2+, and Fe elements exist as Fe2+ and Fe3+. Strong ultraviolet emission peaks, blue double emission peaks and green emission peaks are observed in the photoluminescence spectra of all samples at room temperature. It is found that the PL intensities of (Ni, Fe) co-doped ZnO films could be well modulated by Fe doping. In combination with other reports, we think that the ultraviolet emission peaks are due to exciton recombination; while the blue double peaks are caused by transition of electrons from the zinc interstitial to the top of the valence band or from the oxygen vacancy to the zinc vacancy. However, the green peak is highly dependent on oxygen vacancy and zinc vacancy formed by doping.

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