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The mechanism of negative magnetoresistance in nondegenerate p-type Hg1-xMnxTe (x0.17) monocrystal

Zhu Liang-Qing Lin Tie Guo Shao-Ling Chu Jun-Hao

The mechanism of negative magnetoresistance in nondegenerate p-type Hg1-xMnxTe (x0.17) monocrystal

Zhu Liang-Qing, Lin Tie, Guo Shao-Ling, Chu Jun-Hao
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  • It is important to study the mechanism of negative magnetoresistance (MR) in magnetic semiconductors for the correct understanding of the sp-d interactions between carriers and magnetic ions. In this work, temperature-dependent Hall effect (10300 K) and magnetic susceptibility (5300 K) are measured for the study of negative MR and paramagnetic enhancement of nondegenerate p-type Hg1-xMnxTe (x0.17) monocrystal. As temperature decreases, both negative MR and susceptibility show the same behaviors, each of which contains an exponentially changing temperature function \exp(-K/T). According to the theory of impurity energy level in semimagnetic semiconductor, magnetic field can lead to the spin-splitting of acceptor level and result in reducing the binding energy of acceptors, which is responsible mainly for the negative MR in nondegenerate p-type Hg1-xMnxTe monocrystal.
    • Funds: Project supported by the State Key Development Program for Basic Research of China (Grant No. 2007CB924902) and the National Natural Science Foundation of China (Grant No. 60821092).
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    Sawicki M, Dietl T, Kossut J, Igalson J, Wojtowicz T, Plesiewicz W 1986 Phys. Rev. Lett. 56 508

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    Wojtowicz T, Dietl T, Sawicki M, Plesiewicz W, Jaroszynski J 1986 Phys. Rev. Lett. 56 2419

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    Krenn H, Zawadzki W, Bauer G 1985 Phys. Rev. Lett. 55 1510

    [14]

    Gui Y S, Liu J, Ortner K, Daumer V, Becker C R, Buhmann H, Molenkamp L W 2001 Appl. Phys. Lett. 79 1321

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    Gui Y S, Becker C R, Liu J, König M, Daumer V, Kiselev M N, Buhmann H, Molenkamp L W 2004 Phys. Rev. B 70 195328

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    Liu C X, Qi X L, Dai X, Fang Z, Zhang S C 2008 Phys. Rev. Lett. 101 146802

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    Zhu B, Gui Y S, Zhou W Z, Shang L Y, Qiu Z J, Guo S L, Zhang F J, Chu J H 2006 Acta Phys. Sin. 55 2955 (in Chinese) [朱博, 桂永胜, 周文政, 商丽燕, 仇志军, 郭少令, 张福甲, 褚君浩 2006 物理学报 55 2955]

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    Shapira Y, Oliveira N F, Ridgley D H, Kershaw R, Dwight K, Wold A 1986 Phys. Rev. B 34 4187

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    Shapira Y, Oliveira N F, Becla P, Vu T Q 1990 Phys. Rev. B 41 5931

    [21]

    Kolodziejski L A, Sakamoto T, Gunshor R L, Datta S 1984 Appl. Phys. Lett. 44 799

    [22]

    Aggarwal R L, Furdyna J K, von Molnar S 1987 Diluted Magnetic (Semimagnetic) Semiconductors (Pennsylvania: Materials Research Society) p209

    [23]

    Hagston W E, Stirner T, Harrison P, Holbrook O F, Goodwin J P 1994 Phys. Rev. B 50 5264

    [24]

    Anderson J R, Johnson W B, Stone D R 1983 J. Vac. Sci. Technol. A 1 1761

    [25]

    Johnson W B, Anderson J R, Stone D R 1984 Phys. Rev. B 29 6679

    [26]

    Shen J X, Zheng G Z, Guo S L, Tang D Y 1993 Solid State Commun. 85 57

    [27]

    Galazka R R, Nagata S, Keesom P H 1980 Phys. Rev. B 22 3344

    [28]

    Spalek J, Lewicki A, Tarnawski Z, Furdyna J K, Galazka R R, Obuszko Z 1986 Phys. Rev. B 33 3407

    [29]

    Shapira Y, Ridgley D H, Dwight K, Wold A, Martin K P, Brooks J S 1985 J. Appl. Phys. 57 3210

    [30]

    Shapira Y, Kautz R L 1974 Phys. Rev. B 10 4781

    [31]

    Chu J H 2005 Narrow-gap Semiconductor Physics (Beijing: Science Press) pp283---303 (in Chinese) [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社) 第283---303页]

    [32]

    Krenn H, Kaltenegger K 1989 Phys. Rev. B 39 10918

    [33]

    Warnock J, Wolff P A 1985 Phys. Rev. B 31 6579

    [34]

    Nhung T H, Planel R, Benoit C, Guillaume L, Bhattacharjee A K 1985 Phys. Rev. B 31 2388

    [35]

    Xia J B, Ge W K, Chang K 2008 Semiconductor Spintronics (Beijing: Science Press) pp51---56 (in Chinese) [夏建白, 葛惟昆, 常凯 2008 半导体自旋电子学 (北京: 科学出版社) 第51---56页]

    [36]

    Dietl T, Spalek J 1983 Phys. Rev. B 28 1548

  • [1]

    Furdyna J K 1982 J. Vac. Sci. Technol. 21 220

    [2]

    Rogalski A 1991 Infrared Phys. 31 117

    [3]

    Becla P 1988 J. Vac. Sci. Technol. A 6 2725

    [4]

    Becla P 1993 Proc. SPIE 2021 22

    [5]

    Piotrowski J, Rogalski A 2004 Infrared Phys. Technol. 46 115

    [6]

    Anderson J R, Görska R M, Azevedo L J, Venturini E L 1986 Phys. Rev. B 33 4706

    [7]

    Nagata S, Galazka R R, Mullin D P, Akbarzadeh H, Khattak G D, Furdyna J K, Keesom P H 1980 Phys. Rev. B 22 3331

    [8]

    Wang Z W, Jie W Q 2007 Acta Phys. Sin. 56 1141 (in Chinese) [王泽温, 介万奇 2007 物理学报 56 1141]

    [9]

    Wojtowicz T, Mycielski A 1983 Physica B 117---118 476

    [10]

    Sawicki M, Dietl T, Kossut J, Igalson J, Wojtowicz T, Plesiewicz W 1986 Phys. Rev. Lett. 56 508

    [11]

    Wojtowicz T, Dietl T, Sawicki M, Plesiewicz W, Jaroszynski J 1986 Phys. Rev. Lett. 56 2419

    [12]

    Dillon J F, Furdyna J K, Debska U, Mycielski A 1990 J. Appl. Phys. 67 4917

    [13]

    Krenn H, Zawadzki W, Bauer G 1985 Phys. Rev. Lett. 55 1510

    [14]

    Gui Y S, Liu J, Ortner K, Daumer V, Becker C R, Buhmann H, Molenkamp L W 2001 Appl. Phys. Lett. 79 1321

    [15]

    Gui Y S, Becker C R, Liu J, König M, Daumer V, Kiselev M N, Buhmann H, Molenkamp L W 2004 Phys. Rev. B 70 195328

    [16]

    Liu C X, Qi X L, Dai X, Fang Z, Zhang S C 2008 Phys. Rev. Lett. 101 146802

    [17]

    Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H 2004 Acta Phys. Sin. 53 1977 (in Chinese) [仇志军, 桂永胜, 疏小舟, 戴宁, 郭少令, 褚君浩 2004 物理学报 53 1977]

    [18]

    Zhu B, Gui Y S, Zhou W Z, Shang L Y, Qiu Z J, Guo S L, Zhang F J, Chu J H 2006 Acta Phys. Sin. 55 2955 (in Chinese) [朱博, 桂永胜, 周文政, 商丽燕, 仇志军, 郭少令, 张福甲, 褚君浩 2006 物理学报 55 2955]

    [19]

    Shapira Y, Oliveira N F, Ridgley D H, Kershaw R, Dwight K, Wold A 1986 Phys. Rev. B 34 4187

    [20]

    Shapira Y, Oliveira N F, Becla P, Vu T Q 1990 Phys. Rev. B 41 5931

    [21]

    Kolodziejski L A, Sakamoto T, Gunshor R L, Datta S 1984 Appl. Phys. Lett. 44 799

    [22]

    Aggarwal R L, Furdyna J K, von Molnar S 1987 Diluted Magnetic (Semimagnetic) Semiconductors (Pennsylvania: Materials Research Society) p209

    [23]

    Hagston W E, Stirner T, Harrison P, Holbrook O F, Goodwin J P 1994 Phys. Rev. B 50 5264

    [24]

    Anderson J R, Johnson W B, Stone D R 1983 J. Vac. Sci. Technol. A 1 1761

    [25]

    Johnson W B, Anderson J R, Stone D R 1984 Phys. Rev. B 29 6679

    [26]

    Shen J X, Zheng G Z, Guo S L, Tang D Y 1993 Solid State Commun. 85 57

    [27]

    Galazka R R, Nagata S, Keesom P H 1980 Phys. Rev. B 22 3344

    [28]

    Spalek J, Lewicki A, Tarnawski Z, Furdyna J K, Galazka R R, Obuszko Z 1986 Phys. Rev. B 33 3407

    [29]

    Shapira Y, Ridgley D H, Dwight K, Wold A, Martin K P, Brooks J S 1985 J. Appl. Phys. 57 3210

    [30]

    Shapira Y, Kautz R L 1974 Phys. Rev. B 10 4781

    [31]

    Chu J H 2005 Narrow-gap Semiconductor Physics (Beijing: Science Press) pp283---303 (in Chinese) [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社) 第283---303页]

    [32]

    Krenn H, Kaltenegger K 1989 Phys. Rev. B 39 10918

    [33]

    Warnock J, Wolff P A 1985 Phys. Rev. B 31 6579

    [34]

    Nhung T H, Planel R, Benoit C, Guillaume L, Bhattacharjee A K 1985 Phys. Rev. B 31 2388

    [35]

    Xia J B, Ge W K, Chang K 2008 Semiconductor Spintronics (Beijing: Science Press) pp51---56 (in Chinese) [夏建白, 葛惟昆, 常凯 2008 半导体自旋电子学 (北京: 科学出版社) 第51---56页]

    [36]

    Dietl T, Spalek J 1983 Phys. Rev. B 28 1548

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Publishing process
  • Received Date:  29 May 2011
  • Accepted Date:  28 April 2012
  • Published Online:  20 April 2012

The mechanism of negative magnetoresistance in nondegenerate p-type Hg1-xMnxTe (x0.17) monocrystal

  • 1. State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Fund Project:  Project supported by the State Key Development Program for Basic Research of China (Grant No. 2007CB924902) and the National Natural Science Foundation of China (Grant No. 60821092).

Abstract: It is important to study the mechanism of negative magnetoresistance (MR) in magnetic semiconductors for the correct understanding of the sp-d interactions between carriers and magnetic ions. In this work, temperature-dependent Hall effect (10300 K) and magnetic susceptibility (5300 K) are measured for the study of negative MR and paramagnetic enhancement of nondegenerate p-type Hg1-xMnxTe (x0.17) monocrystal. As temperature decreases, both negative MR and susceptibility show the same behaviors, each of which contains an exponentially changing temperature function \exp(-K/T). According to the theory of impurity energy level in semimagnetic semiconductor, magnetic field can lead to the spin-splitting of acceptor level and result in reducing the binding energy of acceptors, which is responsible mainly for the negative MR in nondegenerate p-type Hg1-xMnxTe monocrystal.

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