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The effect of electrostatic discharge on the I-V and low frequency noise characterization of Schottky barrier diodes

Liu Yu-Dong Du Lei Sun Peng Chen Wen-Hao

The effect of electrostatic discharge on the I-V and low frequency noise characterization of Schottky barrier diodes

Liu Yu-Dong, Du Lei, Sun Peng, Chen Wen-Hao
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  • Received Date:  07 November 2011
  • Accepted Date:  06 December 2011
  • Published Online:  05 July 2012

The effect of electrostatic discharge on the I-V and low frequency noise characterization of Schottky barrier diodes

  • 1. School of Technology Physics, Xi dian University, Xi'an 710071, China
Fund Project:  Project supported by the National Basic Research Program of China (Grant No. 2010CB631002).

Abstract: Based on the analysis of thermal electron emission, the model of the carrier mobility fluctuation and the white noise theory, the effect of electrostatic discharge (ESD) on the I-V and low frequency noise of Schottky barrier diode (SBD) is discussed in this paper. The different Human Body Model(HBM) ESD injected times with the same voltage peaks are applied to the cathode and anode separately. It is found that the diode subjected to the cathode stress shows greater degradation than subjected to the anode stress, and the magnitude of noise shows significant change. With the increase of ESD injected times, the forward characteristic has no change, while reverse current almost increases at each time. The magnitudes of forward and reverse 1/f noise increase all the time. In view of the relationship between defects and damage, and the noise sensibility, the low frequency noise can serve as a tool for researching the sensitivity to the electrostatic discharge damage of SBD.

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