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Passivation and stability of thermal atomic layer deposited Al2O3 on CZ-Si

He Yue Dou Ya-Nan Ma Xiao-Guang Chen Shao-Bin Chu Jun-Hao

Passivation and stability of thermal atomic layer deposited Al2O3 on CZ-Si

He Yue, Dou Ya-Nan, Ma Xiao-Guang, Chen Shao-Bin, Chu Jun-Hao
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  • Received Date:  16 February 2012
  • Accepted Date:  27 June 2012
  • Published Online:  20 December 2012

Passivation and stability of thermal atomic layer deposited Al2O3 on CZ-Si

  • 1. Suntech Power Co., Ltd., Shanghai 200114, China;
  • 2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Nos. 60821092, U1037604), the Shanghai Rising-Star Program (Grants No. 11QB1406800), and the Innovation Project of Shanghai Institute of Technical Physics (No. Q-ZY-51).

Abstract: Atomic layer deposited (ALD) aluminum oxide (Al2O3) has been known as an almost-perfect candidate of passivation dielectric layer for PERC-type c-Si solar cell. Its passivation performance and thermal stability are key issues for industrial PERC c-Si solar cell based on screen-printed technology. In this paper, 20 nm and 30nm Al2O3 films are synthesized on the solar grade CZ-Si by thermal atomic layer deposition. The results show that the effective lifetime can reach 100 μs for CZ-Si after annealing and is kept a half after the sintering process in the industrial beltline furnace, and the materials can be used in PERC-type solar cell. The SEM image demonstrates that the blisters occur in a thicker Al2O3 film, which explains why the passivation and thermal stability of 30 nm film are inferior to those of 20 nm film.

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