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The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors

Li Xing-Ji Lan Mu-Jie Liu Chao-Ming Yang Jian-Qun Sun Zhong-Liang Xiao Li-Yi He Shi-Yu

The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors

Li Xing-Ji, Lan Mu-Jie, Liu Chao-Ming, Yang Jian-Qun, Sun Zhong-Liang, Xiao Li-Yi, He Shi-Yu
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  • Bipolar junction transistors (BJTs), as important electronic components in analog or mixed-signal integrated circuits (ICs) and BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) circuits, are employed in the space environment. Therefore, the research on characteristics and mechanisms of ionization damage in the BJTs is very important. Lower energy electrons are used as irradiation source to study the ionization damage in NPN and PNP transistors. Various bias conditions are imposed on the emitter-base junction to reveal the different bias conditions that contribute to the radiation effect on NPN and PNP transistors during irradiation processing. The semiconductor parameter analyzer, Keithley 4200-SCS, is used to measure the change of electrical parameters of transistors with increasing electron irradiation fluence in situ. Based on the measurement results, we find the degradation of transistors is severe under reverse emitter-base bias, and is lowest under forward emitter-base bias, while it is medium under zero emitter-base bias at a given irradiation fluence.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11205038), and the China Postdoctoral Science Foundation (Grant No. 2012M510951).
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    [2]

    Li X J, Geng H B, Lan M J, Yang D Z, He S Y, Liu C M 2010 Chin. Phys. B 19 066103

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    Liu C M, Li X J, Geng H B, Zhao Z M, Yang D Z, He S Y 2010 Nucl. Instr. and Meth. A 624 671

    [4]

    Li X J, Liu C M, Geng H B, Rui E M, Yang D Z, He S U 2012 IEEE Trans. on Nucl. Sci. 59 439

    [5]

    Li X J, Liu C M, Rui E M, Geng H B, Yang J Q 2012 IEEE Trans. on Nucl. Sci. 59 625

    [6]

    Li X J, Geng H B, Liu C M, Zhao Z M, Yang D Z, He S Y 2010 IEEE Trans. on Nucl. Sci. 57 831

    [7]

    Zhang H L, Lu W, Ren D Y, Cui S 2004 Microelectronics 34 606 (in Chinese) [张华林, 陆妩, 任迪远, 崔帅 2004 微电子学 34 606]

    [8]

    Fei W X, Lu W, Ren D Y, Zheng Y Z, Wang Y Y 2011 Atomic Energy Science and Technology 45 217 (in Chinese) [费武雄, 陆妩, 任迪远, 郑玉展, 王义元 2011 原子能科学技术 45 217]

    [9]

    Zhai Y H, Li P, Zhang G J, Luo Y X, Fan X, Hu B, Li J H, Zhang J, Shu P 2011 Acta Phys. Sin. 20 088501 (in Chinese) [翟亚红, 李平, 张国俊, 罗玉香, 范雪, 胡滨, 李俊宏, 张健, 束平 2011 物理学报 20 088501]

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    Xi S B, Lu W, Ren D Y 2012 Acta Phys. Sin. 61 236103 (in Chinese) [席善斌, 陆妩, 任迪远 2012 物理学报 61 236103]

    [11]

    Li X J, Xiao J D, Liu C M, ZhaoZ M, Geng H B, Lan M J, Yang D Z, He S Y 2010 Nuclear Instruments and Methods in Physics Research A 621 707

    [12]

    Kosier S L, Schrimpf R D, Nowlin R N, Fleetwood D M, DeLaus M, Pease R L, Combs W E, Wei A, Chai F 1993 IEEE Trans. on Nucl. Sci. 40 1276

    [13]

    Nowlin R N, Enlow E W, Schrimpf R D, Combs W E 1992 IEEE Trans. on Nucl. Sci. 39 2026

  • [1]

    Minson E, Sanchez I, Barnaby H J, Pease R L, Platteter D G, Dunham G 2004 IEEE Trans. Nucl. Sci. 51 3723

    [2]

    Li X J, Geng H B, Lan M J, Yang D Z, He S Y, Liu C M 2010 Chin. Phys. B 19 066103

    [3]

    Liu C M, Li X J, Geng H B, Zhao Z M, Yang D Z, He S Y 2010 Nucl. Instr. and Meth. A 624 671

    [4]

    Li X J, Liu C M, Geng H B, Rui E M, Yang D Z, He S U 2012 IEEE Trans. on Nucl. Sci. 59 439

    [5]

    Li X J, Liu C M, Rui E M, Geng H B, Yang J Q 2012 IEEE Trans. on Nucl. Sci. 59 625

    [6]

    Li X J, Geng H B, Liu C M, Zhao Z M, Yang D Z, He S Y 2010 IEEE Trans. on Nucl. Sci. 57 831

    [7]

    Zhang H L, Lu W, Ren D Y, Cui S 2004 Microelectronics 34 606 (in Chinese) [张华林, 陆妩, 任迪远, 崔帅 2004 微电子学 34 606]

    [8]

    Fei W X, Lu W, Ren D Y, Zheng Y Z, Wang Y Y 2011 Atomic Energy Science and Technology 45 217 (in Chinese) [费武雄, 陆妩, 任迪远, 郑玉展, 王义元 2011 原子能科学技术 45 217]

    [9]

    Zhai Y H, Li P, Zhang G J, Luo Y X, Fan X, Hu B, Li J H, Zhang J, Shu P 2011 Acta Phys. Sin. 20 088501 (in Chinese) [翟亚红, 李平, 张国俊, 罗玉香, 范雪, 胡滨, 李俊宏, 张健, 束平 2011 物理学报 20 088501]

    [10]

    Xi S B, Lu W, Ren D Y 2012 Acta Phys. Sin. 61 236103 (in Chinese) [席善斌, 陆妩, 任迪远 2012 物理学报 61 236103]

    [11]

    Li X J, Xiao J D, Liu C M, ZhaoZ M, Geng H B, Lan M J, Yang D Z, He S Y 2010 Nuclear Instruments and Methods in Physics Research A 621 707

    [12]

    Kosier S L, Schrimpf R D, Nowlin R N, Fleetwood D M, DeLaus M, Pease R L, Combs W E, Wei A, Chai F 1993 IEEE Trans. on Nucl. Sci. 40 1276

    [13]

    Nowlin R N, Enlow E W, Schrimpf R D, Combs W E 1992 IEEE Trans. on Nucl. Sci. 39 2026

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  • Received Date:  12 November 2012
  • Accepted Date:  17 December 2012
  • Published Online:  05 May 2013

The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors

  • 1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;
  • 2. School of Astronautics, Harbin Institute of Technology, Harbin 150001, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 11205038), and the China Postdoctoral Science Foundation (Grant No. 2012M510951).

Abstract: Bipolar junction transistors (BJTs), as important electronic components in analog or mixed-signal integrated circuits (ICs) and BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) circuits, are employed in the space environment. Therefore, the research on characteristics and mechanisms of ionization damage in the BJTs is very important. Lower energy electrons are used as irradiation source to study the ionization damage in NPN and PNP transistors. Various bias conditions are imposed on the emitter-base junction to reveal the different bias conditions that contribute to the radiation effect on NPN and PNP transistors during irradiation processing. The semiconductor parameter analyzer, Keithley 4200-SCS, is used to measure the change of electrical parameters of transistors with increasing electron irradiation fluence in situ. Based on the measurement results, we find the degradation of transistors is severe under reverse emitter-base bias, and is lowest under forward emitter-base bias, while it is medium under zero emitter-base bias at a given irradiation fluence.

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