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Electrical transport properties of InSe under high pressure

Wu Bao-Jia Li Yan Peng Gang Gao Chun-Xiao

Electrical transport properties of InSe under high pressure

Wu Bao-Jia, Li Yan, Peng Gang, Gao Chun-Xiao
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  • Received Date:  09 August 2012
  • Accepted Date:  25 March 2013
  • Published Online:  20 July 2013

Electrical transport properties of InSe under high pressure

  • 1. Department of Physics, College of Science, Yanbian University, Yanji 133002, China;
  • 2. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 11074094, 11164031, 51272224) and the National Basic Research Program of China (Grant No. 2011CB808204).

Abstract: Electrical resistivity and Hall-effect in InSe under high pressure are accurately measured in situ. The measurement results of electrical resistivity and the temperature dependence of electrical resistivity show that InSe undergoes semiconductor-to-metal transition at 5-6 GPa and transforms from rhombohedral layered phase P1 (InSe-I) to metallic rocksalt cubic phase P3 (InSe-III) at 12 GPa. Certainly, the pressure-induced metallization of InSe results from the pressure-induced structural phase transition. In addition, Hall-effect measurements display the carrier transport behavior of InSe under pressure, which indicates that InSe undergoes a carrier-type inversion around 6.6 GPa and the increases of the carrier concentration is the dominant factor producing the decrease of the resistivity after 9.9 GPa.

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