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RESISTIVE TRANSITION BROADENING AND FLUX PINNING OF HIGH Jc Ag-SHEATHED Bi(2223) TAPE

JIANG JIAN-YI HU AN-MING SUN YU-PING ZHANG FA-PEI DU JIA-JU

RESISTIVE TRANSITION BROADENING AND FLUX PINNING OF HIGH Jc Ag-SHEATHED Bi(2223) TAPE

JIANG JIAN-YI, HU AN-MING, SUN YU-PING, ZHANG FA-PEI, DU JIA-JU
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  • Received Date:  06 September 1994
  • Published Online:  05 January 1996

RESISTIVE TRANSITION BROADENING AND FLUX PINNING OF HIGH Jc Ag-SHEATHED Bi(2223) TAPE

  • 1. (1)中国科学院固体物理研究所,合肥230031; (2)中国科学院固体物理研究所,合肥230031;中国科学技术大学结构分析开放研究实验室,合肥230026

Abstract: The resistive transition broadening of high Jc Ag-sheathed Bi(2223) tape has been systematically investigated in the field range of 0 to 1T. The experimental result shows that the resistive transition is of the thermally activated behavior. The relation between the flux pinning and the temperature has been studied. The temperature dependence of resistance is R(T) = R0exp [-μ0(1-T/Tc)n/kT] ,where n=4.5 for H//ab plane and n=3 for H⊥ab plane. When the magnetic field is parallel to ab plane, the dissipation is independent of the Lorentz force and only depends on the magnitude of the magnetic field parallel to ab plane. This behavior can be explained in terms of thermally activated pancakelike vortex-an-tivortex pair model. The mechanism of the flux pinning of the Bi-system material is discussed .

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