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van der Waals heterostructure about CuPc/MoS2(0001)

Cao Ning-Tong Zhang Lei Lü Lu Xie Hai-Peng Huang Han Niu Dong-Mei Gao Yong-Li

van der Waals heterostructure about CuPc/MoS2(0001)

Cao Ning-Tong, Zhang Lei, Lü Lu, Xie Hai-Peng, Huang Han, Niu Dong-Mei, Gao Yong-Li
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  • Molecular packing and interfacial electronic properties of well-ordered organic semiconductor, copper phthalocyanine, thin films grown on MoS2(0001) are studied with low energy electron diffraction (LEED) optics, atomic force microscope (AFM) and photoelectron spectroscopy (PES). The band structure of MoS2(0001) around the Γ point of the surface Brillouin zone is given by angle-resolved photoelectron spectroscopy. The LEED patterns indicate that three equivalent well-ordered two-dimensional square lattices are formed in CuPc monolayer thin film along three surface crystalline axes ([1120], [1210] and [2110]) of MoS2 (0001) substrate, respectively. The AFM measurements show that the growth of CuPc on MoS2 (0001) occurs in a Stranski-Krastanov mode. The CuPc molecule can be flat-laying on MoS2(0001) at low coverage (~0.3 nm), but form strip-like crystals along the surface crystal axes of MoS2 (0001) at high coverage (>2.4 nm). The CuPc molecule shows obvious anisotropy, indicating that the molecular plane is not parallel to the MoS2 surface. The PES measurements show there is no charge transfer process at the interface, indicating weak van der Waals interaction between CuPc and MoS2(0001).
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51173205), the Fundamental Scientific Research Foundation for the Central Universities of China (Grant No. 2013zzts155), and the Open-End Fund for the Valuable and Precision Instruments of Central South University, China (Grant No. CSUZC2014023).
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    Kang J, Li J B, Li S S, Xia J B, Wang L W 2013 Nano Lett. 13 5485

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    Britnell L, Ribeiro R M, Eckmann A, Jalil R, Belle B D, Mishchenko A, Kim Y J, Gorbachev R V, Georgiou T, Morozov S V, Grigorenko A N, Geim A K, Casiraghi C, Neto A H C, Novoselov K S 2013 Science 340 1311

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    Chen W B, Yang W F, Zou H J, Tang J X, Deng L F, Li P T 2011 Acta Phys. Sin. 60 117107 (in Chinese) [陈卫兵, 杨伟丰, 邹豪杰, 汤建新, 邓林峰, 黎沛涛 2011 物理学报 60 117107]

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    Wang N N, Sheng Y J, Zang Y, Jiang Y D 2010 Chin. Phys. B 19 038602

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    Nardi M V, Detto F, Aversa L, Verucchi R, Salviati G, Iannotta S, Casarin M 2013 Phys. Chem. Chem. Phys. 15 12864

    [12]

    Zhao J Q, Ding M, Zhang T Y, Zhang N Y, Pang Y T, Ji Y J, Chen Y, Wang F X, Fu G 2012 Chin. Phys. B 21 057110

    [13]

    Wu Q H, Hong G, Ng T W, Lee S T 2012 Appl. Phys. Lett. 100 161603

    [14]

    Wang C G, Irfan I, Turinske A J, Gao Y L 2012 Thin Solid Films 525 64

    [15]

    Koma A, Sunouchi K 1985 J. Vac. Sci. Technol. B 3 724

    [16]

    Ludwig C, Strohmaier R, Petersen J, Gompf B, Eisenmenger W 1994 J. Vac. Sci. Technol. B 12 1963

    [17]

    Okudaira K K, Hasegawa S, Ishii H, Seki K, Harada Y, Ueno N 1999 J. Appl. Phys. 85 6453

    [18]

    Fukuma T, Kobayashi K, Yamada H, Matsushige K 2004 J. Appl. Phys. 95 4742

    [19]

    Boker T H, Severin R, Muller A, Janowitz C, Manzke R 2001 Phys. Rev. B 64 235305

    [20]

    Mahatha S K, Patel K D, Menon K S R 2012 J. Phys.: Condens. Matter 24 475504

    [21]

    Huang H, Sun J T, Feng Y P, Chen W, Wee A T S 2011 Phys. Chem. Chem. Phys 13 20933

    [22]

    Xiao K, Deng W, Keum J K, Yoon M, Vlassiouk I V, Clark K W, Li A P, Kravchenko I I, Gu G, Payzant E A, Sumpter B G, Smith S C, Browning J F Geohegan D B 2013 J. Am. Chem. Soc. 135 3680

    [23]

    McMenamin J C, Spicer W E 1977 Phys. Rev. B 16 5474

    [24]

    Yamane H, Yabuuchi Y, Fukagawa H, Kera S, Okudaira K K, Ueno N 2006 J. Appl. Phys. 99 093705

    [25]

    Chen W, Chen S, Huang H, Qi D C, Gao X Y, Wee A T S 2008 Appl. Phys. Lett. 92 063308

    [26]

    Gao Y L Yan L 2003 Chem. Phys. Lett. 380 451

    [27]

    Ding H J, Gao Y L, Cinchetti M, Wstenberg J P, Sánchez-Albaneda M, Andreyev O, Bauer M, Aeschlimann M 2008 Phys. Rev. B 78 075311

  • [1]

    Xu M, Liang T, Shi M, Chen H 2013 Chem. Rev. 113 3766

    [2]

    Fuhrer M S, Hone J 2013 Nature Nanotechnol. 8 146

    [3]

    Dong H M 2013 Acta Phys. Sin. 62 206101 (in Chinese) [董海明 2013 物理学报 62 206101]

    [4]

    Wu M S, Xu B, Liu G, Ouyang C Y 2012 Acta Phys. Sin. 61 227102 (in Chinese) [吴木生, 徐波, 刘刚, 欧阳楚英 2012 物理学报 61 227102]

    [5]

    Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nature Nanotechnol. 6 147

    [6]

    Wang H, Yu L, Lee Y H, Shi Y, Hsu A, Chin M L, Li L J, Dubey M, Kong J, Palacios T 2012 Nano Lett. 12 4674

    [7]

    Kang J, Li J B, Li S S, Xia J B, Wang L W 2013 Nano Lett. 13 5485

    [8]

    Britnell L, Ribeiro R M, Eckmann A, Jalil R, Belle B D, Mishchenko A, Kim Y J, Gorbachev R V, Georgiou T, Morozov S V, Grigorenko A N, Geim A K, Casiraghi C, Neto A H C, Novoselov K S 2013 Science 340 1311

    [9]

    Chen W B, Yang W F, Zou H J, Tang J X, Deng L F, Li P T 2011 Acta Phys. Sin. 60 117107 (in Chinese) [陈卫兵, 杨伟丰, 邹豪杰, 汤建新, 邓林峰, 黎沛涛 2011 物理学报 60 117107]

    [10]

    Wang N N, Sheng Y J, Zang Y, Jiang Y D 2010 Chin. Phys. B 19 038602

    [11]

    Nardi M V, Detto F, Aversa L, Verucchi R, Salviati G, Iannotta S, Casarin M 2013 Phys. Chem. Chem. Phys. 15 12864

    [12]

    Zhao J Q, Ding M, Zhang T Y, Zhang N Y, Pang Y T, Ji Y J, Chen Y, Wang F X, Fu G 2012 Chin. Phys. B 21 057110

    [13]

    Wu Q H, Hong G, Ng T W, Lee S T 2012 Appl. Phys. Lett. 100 161603

    [14]

    Wang C G, Irfan I, Turinske A J, Gao Y L 2012 Thin Solid Films 525 64

    [15]

    Koma A, Sunouchi K 1985 J. Vac. Sci. Technol. B 3 724

    [16]

    Ludwig C, Strohmaier R, Petersen J, Gompf B, Eisenmenger W 1994 J. Vac. Sci. Technol. B 12 1963

    [17]

    Okudaira K K, Hasegawa S, Ishii H, Seki K, Harada Y, Ueno N 1999 J. Appl. Phys. 85 6453

    [18]

    Fukuma T, Kobayashi K, Yamada H, Matsushige K 2004 J. Appl. Phys. 95 4742

    [19]

    Boker T H, Severin R, Muller A, Janowitz C, Manzke R 2001 Phys. Rev. B 64 235305

    [20]

    Mahatha S K, Patel K D, Menon K S R 2012 J. Phys.: Condens. Matter 24 475504

    [21]

    Huang H, Sun J T, Feng Y P, Chen W, Wee A T S 2011 Phys. Chem. Chem. Phys 13 20933

    [22]

    Xiao K, Deng W, Keum J K, Yoon M, Vlassiouk I V, Clark K W, Li A P, Kravchenko I I, Gu G, Payzant E A, Sumpter B G, Smith S C, Browning J F Geohegan D B 2013 J. Am. Chem. Soc. 135 3680

    [23]

    McMenamin J C, Spicer W E 1977 Phys. Rev. B 16 5474

    [24]

    Yamane H, Yabuuchi Y, Fukagawa H, Kera S, Okudaira K K, Ueno N 2006 J. Appl. Phys. 99 093705

    [25]

    Chen W, Chen S, Huang H, Qi D C, Gao X Y, Wee A T S 2008 Appl. Phys. Lett. 92 063308

    [26]

    Gao Y L Yan L 2003 Chem. Phys. Lett. 380 451

    [27]

    Ding H J, Gao Y L, Cinchetti M, Wstenberg J P, Sánchez-Albaneda M, Andreyev O, Bauer M, Aeschlimann M 2008 Phys. Rev. B 78 075311

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  • Received Date:  10 March 2014
  • Accepted Date:  29 April 2014
  • Published Online:  05 August 2014

van der Waals heterostructure about CuPc/MoS2(0001)

  • 1. Institute of Super-Microstructure and Ultrafast Process in Advanced Materials, Central South University, Changsha 410083, China;
  • 2. Department of Physics and Astronomy, University of Rochester, Rochester 14627, USA
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 51173205), the Fundamental Scientific Research Foundation for the Central Universities of China (Grant No. 2013zzts155), and the Open-End Fund for the Valuable and Precision Instruments of Central South University, China (Grant No. CSUZC2014023).

Abstract: Molecular packing and interfacial electronic properties of well-ordered organic semiconductor, copper phthalocyanine, thin films grown on MoS2(0001) are studied with low energy electron diffraction (LEED) optics, atomic force microscope (AFM) and photoelectron spectroscopy (PES). The band structure of MoS2(0001) around the Γ point of the surface Brillouin zone is given by angle-resolved photoelectron spectroscopy. The LEED patterns indicate that three equivalent well-ordered two-dimensional square lattices are formed in CuPc monolayer thin film along three surface crystalline axes ([1120], [1210] and [2110]) of MoS2 (0001) substrate, respectively. The AFM measurements show that the growth of CuPc on MoS2 (0001) occurs in a Stranski-Krastanov mode. The CuPc molecule can be flat-laying on MoS2(0001) at low coverage (~0.3 nm), but form strip-like crystals along the surface crystal axes of MoS2 (0001) at high coverage (>2.4 nm). The CuPc molecule shows obvious anisotropy, indicating that the molecular plane is not parallel to the MoS2 surface. The PES measurements show there is no charge transfer process at the interface, indicating weak van der Waals interaction between CuPc and MoS2(0001).

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