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Optical properties of InGaAs self-assembled quantum dots with InAlAs wetting lay er

Zhu Tian-Wei Zhang Yuan-Chang Xu Bo Liu Feng-Qi Wang Zhan-Guo

Optical properties of InGaAs self-assembled quantum dots with InAlAs wetting lay er

Zhu Tian-Wei, Zhang Yuan-Chang, Xu Bo, Liu Feng-Qi, Wang Zhan-Guo
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Publishing process
  • Received Date:  14 November 2002
  • Accepted Date:  30 December 2002
  • Published Online:  05 April 2003

Optical properties of InGaAs self-assembled quantum dots with InAlAs wetting lay er

  • 1. 中国科学院半导体研究所半导体材料科学开放实验室,北京 100083

Abstract: A new self-assembled quantum dots system where InGaAs dots are formed on InAlAs wetting layer and embedded in GaAs matrix has been fabricated. The photolumines cence linewidth increases with increasing temperature, which is very different from normal In(Ga)As/GaAs quantum dots. The results are attributed to a higher e nergy of the wetting layer which breaks the carrier transfer channel between dot s and keeps the dots more isolated from each other.

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