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Junction capacitance models of SiGe HBT

Lü Yi Zhang He-Ming Dai Xian-Ying Hu Hui-Yong Shu Bin

Junction capacitance models of SiGe HBT

Lü Yi, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Shu Bin
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  • Abstract views:  2774
  • PDF Downloads:  1194
  • Cited By: 0
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  • Received Date:  13 October 2003
  • Accepted Date:  16 January 2004
  • Published Online:  16 September 2004

Junction capacitance models of SiGe HBT

  • 1. 西安电子科技大学微电子所,西安 710071

Abstract: When SiGe HBT is in the case of normal operation, depleted approximation is not suited, and the influence of movable charge should be taken into account when c onsideri ng of their junction capacitance. Based on the analysis and study of the carr ier tr ansport of SiGe HBT, emitter junction capacitance model is developed by consider ing the carrier distribution, and the collector junction capacitance model is al so established for different current densities including base extending eff ect. The junction capacitance models are used to simulate frequency characteristics. The results of simulation show good agreements with the experimental data.

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