应变SiGe p 型金属氧化物半导体场效应管栅电容特性研究

王斌; 张鹤鸣; 胡辉勇; 张玉明; 宋建军; 周春宇; 李妤晨

doi:10.7498/aps.62.127102

摘要

由于台阶的出现, 应变SiGe p型金属氧化物半导体场效应管 (pMOSFET) 的栅电容特性与体Si器件的相比呈现出很大的不同, 且受沟道掺杂的影响严重. 本文在研究应变SiGe pMOSFET器件的工作机理及其栅电容C-V 特性中台阶形成机理的基础上, 通过求解器件不同工作状态下的电荷分布, 建立了应变SiGe pMOSFET栅电容模型, 探讨了沟道掺杂浓度对台阶的影响. 与实验数据的对比结果表明, 所建立模型能准确反映应变SiGe pMOSFET器件的栅电容特性, 验证了模型的正确性. 该理论为Si基应变金属氧化物半导体(MOS)器件的设计制造提供了重要的指导作用, 并已成功应用于Si基应变器件模型参数提取软件中, 为Si基应变MOS的仿真奠定了理论基础.

关键词:

Abstract

The gate capacitance-voltage (C-V) characteristic of strained SiGe pMOSFET is very different from that of bulk Si pMOSFET, and can be strongly affected by the channel doping. In this paper, we first study the formation mechanism of the "plateau" which can be observed in the gate C-V characteristics of strained SiGe pMOSFET, and then present a physics based analytical model to predict the gate C-V characteristic of strained SiGe pMOSFET. It is found that this plateau is channel doping dependent. The results from the model are compared with the experimental results and they are found to be in excellent agreement with each other, giving the evidence for its validity.

Keywords:

作者及机构信息

1.
西安电子科技大学微电子学院, 宽禁带半导体材料与器件重点实验室, 西安 710071

基金项目: 模拟集成电路国家重点实验室基金(批准号: P140c090303110c0904)、高等学校博士学科点专项科研基金(批准号: JY0300122503)和中央高校基本科研业务费(批准号: K5051225014, K5051225004)资助的课题.

Authors and contacts

1.
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China

Funds: Project supported by the Research Fund of National Laboratory of Analog Integrated Circuits, China (Grant No. P140c090303110c0904), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503), and the Fundamental Research Fund for the Central Universities, China (Grant Nos. K5051225014, K5051225004).

参考文献

[1]	Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L Y 2013 Acta Phys. Sin. 62 057103 (in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 物理学报 62 057013]
[2]	Hu H Y, Zhang H M, Dai X Y, L Y, Shu B, Wang W, Jiang T, Wang X Y 2004 Acta Phys. Sin. 53 4314 (in Chinese) [胡辉勇, 张鹤鸣, 戴显英, 吕懿, 舒斌, 王伟, 姜涛, 王喜媛 2004 物理学报 53 4314]
[3]	Hoyt J L, Nayfeh H M, Eguchi S, Aberg I, Xia G, Drake T, Fitzgerald E A 2002 IEDM Tech. Dig. 20 23
[4]	Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[5]	Haizhou Y, Hobart K D, Peterson R L, Kub F J, Sturm J C 2005 IEEE Trans. Electron Dev. 52 2207
[6]	Nayak D K, Woo J C S, Park J S, Wang K L, Macwilliams K P 1991 IEEE Electron Dev. Lett. 12 154
[7]	Bindu B, DasGupta N, DasGupta A 2006 IEEE Trans. Electron Dev. 53 1411
[8]	Lukic P M, Ramovic R M, Sasic R M 2006 25th International Conference on Microelectronics, Belgrade, May 14-17, 2006 p472
[9]	Fiorenza J G, Park J S, Lochtefeld A 2008 IEEE Trans. Electron Dev. 55 640
[10]	Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 117309
[11]	Voinigescu S P, Iniewski K, Lisak R, Salama T, Noel J P, Houghton D C 1994 Solid State Electron. 37 1491
[12]	Pham A T, Jungemann C, Meinerzhagen B 2010 40th European Solid State Device Research Conference, Spain, Sep. 14-16, 2010 p230
[13]	Yang Z, Wang C, Wang H T, Hu W D, Yang Y 2011 Acta Phys. Sin. 60 077102 (in Chinese) [扬洲, 王茺, 王洪涛, 胡伟达, 杨宇2011 物理学报 60 077102]
[14]	Wei J Y, Maikap S, Lee M H, Lee C C, Liu C W 2006 Solid State Electron 50 109
[15]	Bindu B, DasGupta N, DasGupta A 2007 IEEE Trans. Electron Dev. 54 1889
[16]	Wang B, Zhang H M, Hu H Y, Zhang Y M, Zhou C Y, Wang G Y, Li Y C 2013 Chin. Phys. B 22 028503
[17]	Qu J T, Zhang H M, Wang G Y, Wang X Y, Hu H Y 2011 Acta Phys. Sin. 60 058502 (in Chinese) [区江涛, 张鹤鸣, 王冠宇, 王晓燕, 胡辉勇 2011 物理学报 60 058502]

施引文献

[1]	Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L Y 2013 Acta Phys. Sin. 62 057103 (in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 物理学报 62 057013]
[2]	Hu H Y, Zhang H M, Dai X Y, L Y, Shu B, Wang W, Jiang T, Wang X Y 2004 Acta Phys. Sin. 53 4314 (in Chinese) [胡辉勇, 张鹤鸣, 戴显英, 吕懿, 舒斌, 王伟, 姜涛, 王喜媛 2004 物理学报 53 4314]
[3]	Hoyt J L, Nayfeh H M, Eguchi S, Aberg I, Xia G, Drake T, Fitzgerald E A 2002 IEDM Tech. Dig. 20 23
[4]	Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[5]	Haizhou Y, Hobart K D, Peterson R L, Kub F J, Sturm J C 2005 IEEE Trans. Electron Dev. 52 2207
[6]	Nayak D K, Woo J C S, Park J S, Wang K L, Macwilliams K P 1991 IEEE Electron Dev. Lett. 12 154
[7]	Bindu B, DasGupta N, DasGupta A 2006 IEEE Trans. Electron Dev. 53 1411
[8]	Lukic P M, Ramovic R M, Sasic R M 2006 25th International Conference on Microelectronics, Belgrade, May 14-17, 2006 p472
[9]	Fiorenza J G, Park J S, Lochtefeld A 2008 IEEE Trans. Electron Dev. 55 640
[10]	Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 117309
[11]	Voinigescu S P, Iniewski K, Lisak R, Salama T, Noel J P, Houghton D C 1994 Solid State Electron. 37 1491
[12]	Pham A T, Jungemann C, Meinerzhagen B 2010 40th European Solid State Device Research Conference, Spain, Sep. 14-16, 2010 p230
[13]	Yang Z, Wang C, Wang H T, Hu W D, Yang Y 2011 Acta Phys. Sin. 60 077102 (in Chinese) [扬洲, 王茺, 王洪涛, 胡伟达, 杨宇2011 物理学报 60 077102]
[14]	Wei J Y, Maikap S, Lee M H, Lee C C, Liu C W 2006 Solid State Electron 50 109
[15]	Bindu B, DasGupta N, DasGupta A 2007 IEEE Trans. Electron Dev. 54 1889
[16]	Wang B, Zhang H M, Hu H Y, Zhang Y M, Zhou C Y, Wang G Y, Li Y C 2013 Chin. Phys. B 22 028503
[17]	Qu J T, Zhang H M, Wang G Y, Wang X Y, Hu H Y 2011 Acta Phys. Sin. 60 058502 (in Chinese) [区江涛, 张鹤鸣, 王冠宇, 王晓燕, 胡辉勇 2011 物理学报 60 058502]

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