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INVESTIGATION OF THE SEMICONDUCTOR STRAINED SUPERLATTICE STRUCTURE AND INTERFACE BY X-RAY ROCKING-CURVE ANALYSIS

ZHU NAN-CHANG LI RUN-SHEN XU SHUN-SHENG

Citation:

INVESTIGATION OF THE SEMICONDUCTOR STRAINED SUPERLATTICE STRUCTURE AND INTERFACE BY X-RAY ROCKING-CURVE ANALYSIS

ZHU NAN-CHANG, LI RUN-SHEN, XU SHUN-SHENG
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  • The dynamical theory as developed by Takagi and Taupin for imperfect crystals has been applied to analyse the intensity distribution of the superlattice diffraction peaks, and to compute the rocking curves when the interface grading and the period thickness fluctuation are present. The reason why the interference fringes between the superlattice diffraction peaks disappear and the superlattice diffraction peaks broaden are discussed. It is clear that the intensity distribution of the superlattice diffraction peaks depends on the superlattice period thickness, the composition and strain in it. The interface gradient and the period thickness fluctuation may affect the double-crystal rocking curves. The main reason of the superlattice diffraction peak broadening is the bending of lattice plane.
  • [1] Zhu Xiao-Xian, Gao Yi-Tan, Wang Xian-Zhi, Wang Yi-Ming, Wang Ji, Wang Zhao-Hua, Zhao Kun. Research of attosecond pulse train generation and phase information reconstruction. Acta Physica Sinica, 2024, 0(0): . doi: 10.7498/aps.73.20240292
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Publishing process
  • Received Date:  03 May 1990
  • Published Online:  01 July 2005

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